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Details are given of a study of the characteristics of field-induced electron emission from hydrogen-free high sp~3 content (>90 % ) amorphous diamond (a-D) film deposited on heavily doped (p<0.01 Ω·cm) n-type monoerystalline Si (111 ) substrate. It is demonstrated that a-D film has excellent electron field emission properties. The emission current can reach 0.9 μA at applied field as low as 1 V/μm, and the emission current density can be ahout several mA/cm~2 under 20 V/μm. The emission current is stable when the beginning current is at 50 μA within 72 h. Uniform fluorescence display of electron emission from the whole face of the a-D film under the electric field of 10-12 V/μm is also observed. The contribution of excellent electron emission property results from the smooth, uniform, amorphous surface and high sp~3 content of the a-D film. 相似文献
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一种新型陶瓷材料及其耐磨性 总被引:5,自引:0,他引:5
对新型Al2O3-TiC-Co陶瓷的磨粒磨损,冲蚀磨损及其在单颗粒作用下的摩擦磨损行为进行了研究。与AT30(70wt%Al2O3-30wt%TiC)陶瓷相比,Al2O3-TiC-Co陶瓷具有更为良好的耐磨性,金属钴的存在提高了基体的韧性,细化了晶粒,其综合力学性能得到了显著提高,ATC陶瓷样品耐磨性与其强韧化水平和细致的组织结构有关。 相似文献
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通过SEM观察和EDXA分析对Al2O3/SiC和SiCw/SiC陶瓷的耐磨粒磨损性进行了比较研究。在低应力下,Al2O3/SiC陶瓷的耐磨性优于SiCw/SiC陶瓷,而在较高应力下则相反。 相似文献
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一种新型陶瓷的冲蚀磨损耐磨性 总被引:1,自引:0,他引:1
对TiC及Al2O3粉末进行表面改性,在其表面均匀包覆一层钴膜,然后再用热等静压制备出硬度和韧性较较理想的Al2O3-TiC-Co新型金属陶瓷,该材料的断裂韧性比未改性的AT30材料有较大的提高,硬度两者相当,并对AT30和ATC材料的冲蚀行为及冲蚀机制进行了比较研究,研究表明,无论在高角还是在底角冲蚀条件下,其抗冲蚀性能优于Al2O3-TiC陶瓷,尤其是在高角冲蚀条件下。 相似文献
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Effect of interface layers on electron field emission properties of amorphous diamond films 总被引:1,自引:0,他引:1
Hydrogen-free high sp~3 content amorphous diamond (AD) films are deposited on three different substrates——Au-coated Si (Au/Si), Ti-coated Si (Ti/Si) and Si wafers. Electron field emission properties and fluorescent displays of the above AD films are studied by using a sample diode structure. The compositional profile of the interfaces of AD/Ti/Si and AD/Si is examined by using secondary ions mass spectroscopy (SIMS). Because of the reaction and interdiffusion between Ti and C, the formation of a thin TiC intermediate layer is possible between AD film and Ti/Si substrate. The field emission properties of AD/Ti/Si are sufficiently improved, especially its uniformity. A field emission density of 0.352 mA/cm~2 is obtained under an electric field of 19.7 V/μm. The value is much more than that of AD/Au/Si and AD/Si under the same electric field. 相似文献
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研究了用真空磁过滤弧沉积(FAD)方法制备的非晶金刚石薄膜(aDF)的电子场发射性能,其最小阈值电压为2.1V。sp3键含量不同的aDF发射性能也不同,适当的sp2键含量能降低阈值电压,提高sp3键含量能提高发射稳定性。根据实验结果提出了一种发射机制。 相似文献