NANODEV: A Nanoelectronic-Device Simulation Software System

The concept and structure of the NANODEV simulation software are described. NANODEV deals with nanoelectronic devices that exploit single-electron tunneling, resonant tunneling, or quantum interference. It can use both simplified and sophisticated models and enables one to evaluate a wide variety of devices and configurations. The capabilities of NANODEV are illustrated by examples.     

Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them

The decrease in the density of dangling silicon-silicon bonds in a-Si:H films as a result of annealing in an atomic-hydrogen atmosphere is determined by their density in the initial (nonannealed) film. The change in the total hydrogen density in a-Si:H films, annealed in an atomic-hydrogen atmosphere, is determined by the type of silicon-hydrogen bonds and the impurity content: The hydrogen content can decrease to 1 at. % in the presence of monohydride bonds (2020 cm⁻¹) and no change is observed in the hydrogen content in the presence of oxygen (≲0.1 at. %). A decrease in the defect density as a result of annealing in an atomic-hydrogen atmosphere is observed for all films. The Staebler-Wronski effect — AM-1 irradiation for 10 h — is observed for all films irrespective of the total hydrogen density, the type of silicon-hydrogen bonds, and the presence of oxygen. Fiz. Tekh. Poluprovodn. 32, 620–626 (May 1998)     

The Scientific Research Seminar on Computer Algebra in 2000–2001

An annual report on meetings of the scientific research seminar on computer algebra is presented.     

The research seminar on computer algebra in 2005–2006

An annual report on meetings of the scientific research seminar on computer algebra is presented.     

Effect of the physical properties of a wall on heat transfer in turbulent natural convection. 2. Analytical study

The experimental heat transfer coefficient is calculated from data on the structure of the turbulent boundary layer and assumptions on heat-transfer mechanism.Translated from Inzhenerno-fizicheskii Zhurnal, Vol. 60, No. 5, pp. 730–735, May, 1991.     

Corrosion fatigue of extruded magnesium alloys

Corrosion fatigue tests were carried out on extruded AZ31 (3% Al, 1% Zn, 0.3% Mn, Mg—the rest), AM50 (5% Al, 0.4% Mn, Mg—the rest) and ZK60 (5% Zn, 0.5% Zr, Mg—the rest) Mg alloys in air, NaCl-based and borate solutions. N_sol/N_air ratios (the relative fatigue life) were used for the analysis of the corrosion fatigue behavior of Mg alloys in various environments, where N_sol and N_air are the numbers of cycles to failure in the solution and in air, respectively. Extruded ZK60 alloy reveals very high fatigue and corrosion fatigue properties in comparison with other alloys. However, it has the lowest relative fatigue life (N_sol/N_air 10⁻³–10⁻²) or the highest sensitivity to the action of NaCl-based solutions in comparison with that of AM50 and AZ31 alloys (N_sol/N_air 10⁻²–10⁻¹). Under the same stress, the corrosion fatigue life of extruded alloys is significantly longer than that of die-cast alloys (N_sol for extruded AM50 in NaCl is two to three times longer than that of die-cast AM50).     

Galvanomagnetic properties of 3C-SiC epilayers grown on hexagonal SiC substrates

Epitaxial 3C-SiC films have been grown on 6H-SiC substrates by sublimation epitaxy in vacuum. The Hall effect in these heterostructures and their magnetoresistance have been measured in a temperature range from 1.4 to 300 K. At liquid-helium temperatures, the samples are characterized by low resistance and exhibit negative magnetoresistance in weak fields (～1 T). Analysis of the experimental results suggests that the low resistance of samples is most probably due to the metal-insulator transition in the epitaxial 3C-SiC films.