Modeling electromigration lifetime under bidirectional currentstress

Electromigration reliability of interconnect under bidirectional current stress has been studied in a wide frequency range (mHz to 200 MHz). Experimental results show that the AC lifetime rises with the stress current frequency. The current density exponent and the activation energy of AC lifetime are found to be twice that of DC lifetime. Pure AC current stress failure at extremely high current density is believed to result from thermal migration of metal at hot/cold transition points     

An electromigration failure model for interconnects under pulsedand bidirectional current stressing

An electromigration failure model which can be used to project the electromigration lifetime under pulsed DC and AC current stressing has been reported. The experimental results indicate that different metallization systems (Al-2%Si, Al4%Cu/TiW, and Cu) show similar failure behaviors, which can be explained and predicted by this model. The pulsed DC lifetime is found to be longer than DC lifetime, and the AC lifetime is found to be very much longer. This recognition can provide significant relief to circuit designs involving metals carrying pulsed DC and AC currents, and allow a more aggressive design to improve circuit density and speed     

Hypoxia/Temperature/pH Triple Stimuli–Responsive Block Copolymers: Synthesis,Self-Assembly,and Controlled Drug Release

The amphiphilic block copolymer poly(methacrylic acid-co-2-nitroimidazole acrylate)-b-poly(2-(N,N-dimethylamino)ethyl methacrylate) (P(MAA-co-NIMA)-b-PDMAEMA) with the hypoxia/temperature/pH triple responsiveness is synthesized by reversible addition-fragmentation chain transfer polymerization (RAFT), hydrolysis, and 3-(3-dimethylaminopropyl)-1-ethylcarbodiimide (EDC) reactions, and successfully self-assembled into micelles. The hypoxia response in vitro is realized, and then the sensitivity of the self-assembled micelles to the hypoxia condition is studied by controlling the grafting amount of aminated 2-nitroimidazole. Because 2-(N,N-dimethylamino) ethyl methacrylate (DMAEMA) is a typical material sensitive to temperature and pH conditions, the self-assembled micelles are also responsive to temperature and different acidic/basic conditions. In addition, the cumulative release rate of doxorubicin (DOX) at 42 °C, pH = 6.0, and hypoxic conditions increases significantly, and verifies the synergistic promotion effect of the above stimulations. This intelligent polymer with triple response mechanism improves the controllability and efficiency of drug release, and is expected to be a drug carrier for cancer treatment.     

Novel dual-metal gate technology using Mo-MoSi/sub x/ combination

A novel dual-metal gate technology that uses a combination of Mo-MoSi/sub x/ gate electrodes is proposed. An amorphous-Si/Mo stack was fabricated as a gate electrode for the n-channel device. It was thermally annealed to form MoSi/sub x/. Pure Mo served as the gate electrode for the p-channel device. The work functions of MoSi/sub x/ and pure Mo gates on SiO/sub 2/ are 4.38 and 4.94 eV, respectively, which are appropriate for devices with advanced transistor structures. The small increase in the work function (< 20 meV) and the negligible equivalent oxide thickness variation (< 0.08 nm) after rapid thermal annealing at 950 /spl deg/C for 30 s also demonstrate the excellent thermal stabilities of Mo and MoSi/sub x/ on SiO/sub 2/. Additional arsenic ion implantation prior to silicidation was demonstrated further to lower the work function of MoSi/sub x/ to 4.07 eV. This approach for modulating the work function makes the proposed combination of Mo-MoSi/sub x/ gate electrodes appropriate for conventional bulk devices. The developed dual-metal-gate technology on HfO/sub 2/ gate dielectric was also evaluated. The effective work functions of pure Mo and undoped MoSi/sub x/ gates on HfO/sub 2/ are 4.89 and 4.34 eV, respectively. A considerable work-function shift was observed on the high-/spl kappa/ gate dielectric. The effect of arsenic preimplantation upon the work function of the metal silicide on HfO/sub 2/ was also demonstrated, even though the range of modulation was a little reduced.     

Dual-metal gate CMOS technology with ultrathin silicon nitride gatedielectric

We report the first demonstration of a dual-metal gate complementary metal oxide semiconductor (CMOS) technology using titanium (Ti) and molybdenum (Mo) as the gate electrodes for the N-metal oxide semiconductor field effect transistors (N-MOSFETs) and P-metal oxide semiconductor field effect transistors (P-MOSFETs), respectively. The gate dielectric stack consists of a silicon oxy-nitride interfacial layer and a silicon nitride (Si₃N₄) dielectric layer formed by a rapid-thermal chemical vapor deposition (RTCVD) process. C-V characteristics show negligible gate depletion. Carrier mobilities comparable to that predicted by the universal mobility model for silicon dioxide (SiO₂) are observed     

预处理工艺对黑蒜功能性成分、抗氧化活性影响及相关性研究

分别利用微生物、冷冻和高温高压3种工艺对白蒜进行预处理,发酵制备黑蒜,对黑蒜发酵过程中的色差、褐变程度、总酚、蛋白质、总酸、pH、S-烯丙基-L-半胱氨酸(S-allyl-L-cysteine,SAC)、5-羟甲基糠醛(5-hydroxym-ethylfurfural,5-HMF)等理化指标进行监测,并对羟自由基清除能...     

混凝土单轴受拉断裂行为的近场动力学模拟

混凝土的宏观力学行为取决于材料组成及其性质。本文基于键基近场动力学理论建立了多相非均质性的混凝土细观尺度数值模型,研究了单轴拉伸作用下混凝土的宏观力学性能和断裂过程。通过改变粗骨料含量、砂浆强度、粗骨料强度以及界面过渡区强度对模型合理性进行了验证。结果表明:软化段之前的应力-应变曲线能够被很好重现,能准确描述混凝土在单轴拉伸作用下的力学性能和断裂过程;调整数值模型中各相材料的力学参数能够合理模拟出不同类型的混凝土在单轴拉伸作用下的断裂过程。     

哈尔滨中央大街九至十一道街建筑改造--关于城市建筑再利用和激活城市空间的科学性探讨

哈尔滨中央大街九至十一道街建筑改造的设计动作过程，反映出城市更新中对新建传统式建筑不同的学术态度和激活城市空间不同的发展决策，这类问题是摆在我国城市面前全新的课题。引入国外城市动作的经验，讨论研究和进行交流变得非常必要，我们将希望寄托于对都市文化建设有话语权的人们，我们相信科学的发展观。     

石化企业电网谐振过电压的预防

针对一化工厂由单相接地引起的谐振过电压事故为例,分析了其产生的机理和危害,指出了该厂一些配电室消谐措施的弊端,并阐述了解决谐振过电压问题所采取的一些措施.     

大跨度单层网壳结构风振响应的流固协同分析

风振计算是结构设计中的一项重要内容,该方法在进行复杂结构风振计算时的准确性值得商榷.利用风洞试验进行风振响应分析存在成本高、周期长、试验复杂等缺点.研究了运用计算流体动力学(Computational Fluid Dynamic,CFD)中的非稳态计算,获取建筑物表面风荷载时程,通过网格数据插值,将风荷载直接作用于有限元模型的相应节点进行动力时程分析,提出了适合此类结构使用的风振系数简化计算公式.采用该方法对某一大跨单层悬索式网壳结构的风振响应进行了计算.结果表明,流体动力学与固体有限元程序之间的协同分析,不但支持不同软件不同节点之间的匹配,而且可以考虑自然风的时空相关性以及结构高阶振型的影响,更加精确地反映结构实际的风振情况.