A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

A novel InP/InGaAs TEBT for ultralow current operations

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.     

兰州重离子加速器大型真空室

已建成的兰州重离子加速器的真空室是一个大型整体结构的超高真空容器,直径约10m,高4.5m,重65000kg,内表面积211m~2,容积100m~3,工作真空度为5×10~(-5)Pa。采用有限单元法在计算机上用SAP-5C程序对真空室受力分析进行了计算。真空室结构材料选用瑞典Uddeholm钢厂生产的316 L 超低碳不锈钢。承制此大型容器的是航天工业部风华机器厂。由于结构庞大,首先将真空室分成八大块和几小块在工厂制造,然后运至现场焊制成一整体容器并进行机械加工。所有密封焊缝均用着色渗透液,X-射线探伤和氦质谱探漏仪进行检查和探漏。     

Colloidal silica removal in coagulation processes for wastewater reuse in a high-tech industrial park.

Four experiments of coagulation and flocculation were conducted to investigate the characteristics of colloidal silica removal in a high-tech industrial wastewater treatment plant for reclamation and reuse of the effluent. Experimental results illustrated that poly-aluminium chloride (PACl) showed higher performances on colloidal silica removal than alum. Interestingly, the two coagulants demonstrated the same capacity on silica removal. The specific silica removal capacity was approximately 0.135 mg SiO2/mg Al2O3 when the dosage of coagulants was in the range 30-150 mg/L Al2O3. In addition, the silica was reduced significantly at the condition of pH above 8. Experimental data implied that precipitation of aluminium flocs was the major mechanism for colloid silica removal in PACl and alum coagulation, besides, charge adsorption was also important for improving removal efficiency. Moreover, the addition of polyacrylic acid (PAA) as a flocculant could slightly advance silica removal in the PACl coagulation. The combined PACl/PAA/flocs coagulation was effective for the removal of colloidal silica, soluble COD, and turbidity and also suitable as a pretreatment unit in wastewater reclamation and reuse processes.     

窄带中频数字接收机高速信号处理技术

窄带中频数字接收机在雷达对抗侦察中得到了广泛应用，其高速信号处理技术是目前研究的重点。本文详细介绍了数字雷达告警接收机高速信号处理技术的发展现状和关键技术，最后通过对该技术的全面分析指出了值得深入研究的领域。     

Synthesis and characterization of a novel proton‐exchange membrane for fuel cells operating at high temperatures and low humidities

The synthesis of a p‐toluidine/formaldehyde (PTF) resin was performed, and the effects of the molar ratio of the individual monomers and the polymerization conditions on the structure of the PTF resin were studied. Fourier transform infrared and ¹³C‐NMR spectra were used to characterize the PTF. Wide‐angle X‐ray diffraction patterns revealed the crystalline structures of various PTFs. Polarized optical microscopy revealed that the molar ratio of the monomers had a strong effect on the crystalline morphologies. A longer polymerization time turned out a polymer with a higher intrinsic viscosity and molecular weight, which led to differences in the proton conductivity. All of the PTFs showed a higher proton conductivity than a commercial Nafion membrane at 90–100°C and 0% relative humidity. The proton conductivity of the PTF series could be improved by sulfonation with sulfuric acid and could be maintained after blending with polyurethane. Pure methanol could be used as a fuel source because of the insolubility and nonwetting properties of PTF in methanol to increase the output current density for a PTF membrane electrode assembly. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci 2008     

Performance limitations of TDD wireless personal communications with asynchronous radio ports

A wireless personal communications system, based on a TDMA architecture, using asynchronous ports (radio base stations) and the TDD (time division duplexing) method is evaluated using computer simulations. It is shown that, without port synchronisation TDD methods cannot achieve the uplink quality obtainable by the FDD (frequency division duplexing) method.<>     

A D&T roundtable: challenges for low-power and high-performancechips

Microprocessor and other lC performance continues to improve at historic rates, with no visible end in sight for the next 10 years. However, we are starting to encounter a power wall. This is true for high-performance components as well as for low-power chips with a very limited energy budget offered by batteries. We need to find ways to manage power and energy consumption on all fronts-technology, design, and architecture-without compromising performance. Otherwise, we may face discontinuation of Moore's law for the semiconductor industry in the near future. This would be triggered not by any difficulty in the scaling of process technology but by formidable barriers posed by packaging and cooling, inefficacy of power delivery, and energy constraints dictated by battery technology, which is advancing at a very lukewarm pace