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排序方式: 共有10000条查询结果,搜索用时 140 毫秒
1.
Wireless Personal Communications - Chronic kidney disease (CKD) is a gradual loss of kidney function over the period of time and it is irrevocable once functionality reaches the critical state.... 相似文献
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Muniyandi Kasipandi Jagadeesan Gayathri George Blassan P. Manoharan Ashwini Lydia Nataraj Gayathri Abrahamse Heidi Thangaraj Parimelazhagan 《Food science and biotechnology》2022,31(13):1717-1728
Food Science and Biotechnology - A rich source of nutrients, figs have a number of clinically validated benefits. This study aimed to evaluate the in vitro simulated gastrointestinal digestion, and... 相似文献
4.
F.T. Munna Vidhya Selvanathan K. Sobayel Ghulam Muhammad Nilofar Asim Nowshad Amin Kamaruzzaman Sopian Md. Akhtaruzzaman 《Ceramics International》2021,47(8):11003-11009
In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn2+ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn2+ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn2+. Optical characterization has shown that the transparency of the film is influenced by Zn2+ concentration and when the Zn2+ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn2+ concentration would be a promising candidate in CIGS solar cell. 相似文献
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Multimedia Tools and Applications - In this work, a new fuzzy logic-based algorithm is proposed for the enhancement of low light color images. A generalization of a fuzzy set known as an... 相似文献
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Karimi Bayan Chang Yu-Cheng Pekola Jukka P. 《Journal of Low Temperature Physics》2022,207(3-4):220-225
We discuss the temperature dependence of a common low temperature local thermometer, a tunnel junction between a superconductor and a normal metal (NIS junction). Towards the lowest temperatures its characteristics tend to saturate, which is usually attributed to selfheating effects. In this technical note, we reanalyze this saturation and show that the temperature independent subgap current of the junction alone explains in some cases the low temperature behavior quantitatively.
相似文献7.
Journal of Chemical Ecology - Biocontrol agents such as parasitic wasps use long-range volatiles and host-associated cues from lower trophic levels to find their hosts. However, this chemical... 相似文献
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To investigate the evolution of the structural and enhanced magnetic properties of GdMnO3 systems induced by the substitution of Mn with Cr, polycrystalline GdMn1-xCrxO3 samples were synthesized via solid-state reactions. XRD characterization shows that all GdMn1-xCrxO3 compounds with single-phase structures crystallize well and that Cr3+ ions entering the lattice sites of GdMnO3 induce structural distortion. SEM results indicate that the grain size of the synthesized samples (a few microns) decreases as the Cr substitution concentration increases. Positron annihilation lifetime spectroscopy reveals that vacancy-type defects occur in GdMn1-xCrxO3 ceramics and that the vacancy size and concentration clearly change with the Cr content. The temperature and field dependence of the magnetization curves show that Cr substitution significantly influences the magnetic ordering of the gadolinium sublattice, improving the weak ferromagnetic transition temperature and magnetization of GdMn1-xCrxO3. The enhanced magnetization of GdMn1-xCrxO3 is closely related to the vacancy defect concentration. 相似文献
9.
Seredin P. V. Radam Ali Obaid Goloshchapov D. L. Len’shin A. S. Buylov N. S. Barkov K. A. Nesterov D. N. Mizerov A. M. Timoshnev S. N. Nikitina E. V. Arsentyev I. N. Sharafidinov Sh. Kukushkin S. A. Kasatkin I. A. 《Semiconductors》2022,56(4):253-258
Semiconductors - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid... 相似文献
10.
Kravchenko V. F. Konovalov Ya. Yu. 《Journal of Communications Technology and Electronics》2022,67(8):952-964
Journal of Communications Technology and Electronics - A new design of wavelets based on the convolution of a compactly supported function with a rectangular pulse is proposed and theoretically... 相似文献