Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope

We have analyzed degradation of N-channel thin-film-transistor (TFT) under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependences, we proposed a model considering electron traps in the poly-Si.     

Effect of the addition of silver compounds during the pyrolysis of manganese nitrate on tantalum anodic oxide film

A study of the pyrolysis of an aqueous solution of manganese nitrate in the presence of silver compounds has been carried out. Thermal analysis showed that the MnO₂ formation temperature and the transformation temperature from MnO₂ to Mn₂O₃ shifted towards a lower temperature in the presence of silver acetate. A large particle-size and high crystallinity MnO₂ was formed; this may be a useful method of making an excellent tantalum capacitor with high capacitance.     

Optical 40-gb/s 3R regenerator with a combination of the SPM and XAM effects for all-optical networks

An all-optical 3R regenerator with a combination of self-phase modulation (SPM) and cross-absorption modulation (XAM) effects is proposed and investigated. Principle performances of the proposed all-optical 3R regenerator were experimentally investigated at a signal bit rate of 40 Gb/s. The all-optical 3R regenerator, which is located at the midpoint of a 1080-km transmission line, successfully provided an approximately 3-dB improvement of the Q-factor both just after regeneration and after totally 1080-km transmission. The chromatic dispersion tolerance of the proposed 3R regenerator was also investigated and successfully enhanced to about twice as wide by introducing a predistortion block configuration including a highly nonlinear fiber (HNLF). It was confirmed that the proposed all-optical 3R regenerator can become one of the strong candidates for the actual deployment of the all-optical network.     

Thermal Degradation Under Pulse Operation in Low-Temperature p-Channel Poly-Si Thin-Film Transistors

We analyzed the heat generation of a low-temperature polycrystalline thin-film transistor in pulse operation and proposed a technique for accurately measuring its thermal temperature in high-frequency operation. From this measurement, we were able to calculate the time constants for heating and radiation for the first time. At a low frequency, the temperature difference between when the pulse was on and off was remarkable. As the frequency was increased, the maximum and minimum temperatures approached each other and became equal at a frequency of approximately 1 kHz. We also measured the degradation in pulse operation and discussed the relationship between the thermal temperature and the degradation in the pulse operation     

Characterization of crystalline silicon grown by plasma-enhanced CVD for thin-film solar cells

High growth-rate Si epitaxy by plasma-enhanced chemical vapor deposition (PECVD) has been investigated for a thin-film solar cell application. A high growth rate of 50 μm/h was obtained at 1050°C with plasma which is 50% larger than that by the conventional CVD without plasma. The electrical properties are almost the same for epitaxial layers with and without plasma. For undoped n-type layers, the Hall mobility and carrier density were about 600 cm²/V s and low 10¹⁵ cm⁻³, respectively. The electron diffusion length in doped p-type layers was about 20 μm. These electrical properties for the layer with plasma, in spite of higher growth rate, are comparable or better than those without plasma.     

High-precision transfer-printing and integration of vertically oriented semiconductor arrays for flexible device fabrication

Flexible electronics utilizing single crystalline semiconductors typically require post-growth processes to assemble and incorporate the crystalline materials onto flexible substrates. Here we present a high-precision transfer-printing method for vertical arrays of single crystalline semiconductor materials with widely varying aspect ratios and densities enabling the assembly of arrays on flexible substrates in a vertical fashion. Complementary fabrication processes for integrating transferred arrays into flexible devices are also presented and characterized. Robust contacts to transferred silicon wire arrays are demonstrated and shown to be stable under flexing stress down to bending radii of 20 mm. The fabricated devices exhibit a reversible tactile response enabling silicon based, nonpiezoelectric, and flexible tactile sensors. The presented system leads the way towards high-throughput, manufacturable, and scalable fabrication of flexible devices.     

Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration

Temperature characteristics of the open-circuit voltage (V_oc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge triple-junction cells. Also, single-junction cells that had the similar structure to the subcells in the triple-junction cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of V_oc of the InGaP/InGaAs/Ge triple-junction solar cell (dV_oc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subcell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-junction cell reduced to almost 0 V temperatures over 120°C under 1 sun condition.     

城市森林

重庆是中国最年轻的直辖市,城市规划建设大有可为,完全有条件建成一个大家公认的宜居城市,一个环境优美的城市,一个交通顺畅的城市,甚至变成一个森林城市。一个有希望、有活力的地方,要敢于设想和设计自己的美好未来。——薄熙来(重庆市长)