Development of the Multicultural Counseling Inventory: A self-report measure of multicultural competencies.

Presents the Multicultural Counseling Inventory (MCI), a self-report instrument that measures multicultural counseling competencies. Study 1 comprised 604 psychology students, psychologists, and counselors in a midwestern state. In Study 2, respondents were a national random sample of 320 university counselors. Instrument analysis included exploratory principal-axis factor analysis with oblique rotation, assessment of factor congruence between the factor structures of the 2 samples, LISREL confirmatory factor analysis to test the relative goodness of fit of 6 competing factor models of the MCI, and tests of internal consistency reliabilities. Results indicate that the MCI has 4 factors: Multicultural Counseling Skills, Multicultural Awareness, Multicultural Counseling Relationship, and Multicultural Counseling Knowledge. A higher order, more general multicultural counseling factor is also discussed. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Local triboelectrification of an n-GaAs surface using the tip of an atomic-force microscope

The method of scanning Kelvin-probe microscopy is used to show that the effect of triboelectrification is observed when the tip of an atomic-force microscope interacts with the surface of n-GaAs epitaxial layers. The sign of the change in the potential indicates that the sample surface after triboelectrification becomes more negative. The observed specific features of the phenomena can be attributed to the thermally activated generation of point defects in the vicinity of the sample surface due to deformation caused by the tip.     

Influence of the initiation energy on development of hydrogen–air mixtures combustion in large spherical volumes

We investigate the influence of the initiation energy on the development of burning in hydrogen–air mixtures with an hydrogen content of 7–31% (volume). We initiated the mixtures in the center of the spherical reaction volume, 7–40 m³ in size, by energies from 1 J up to 4600 J. The reaction volume was bordered by a thin rubber envelope and located inside the 910 m³ spherical explosion chamber. We registered the flame front movement by means of the ionization sensors, the video camera, and the high-speed video camera.     

Capacitance study of electron traps in low-temperature-grown GaAs

Electron traps in GaAs grown by MBE at temperatures of 200–300°C (LT-GaAs) were studied. Capacitance deep level transient spectroscopy (DLTS) was used to study the Schottky barrier on n-GaAs, whose space-charge region contained a built-in LT-GaAs layer ∼0.1 μm thick. The size of arsenic clusters formed in LT-GaAs on annealing at 580°C depended on the growth temperature. Two new types of electron traps were found in LT-GaAs layers grown at 200°C and containing As clusters 6–8 nm in diameter. The activation energy of thermal electron emission from these traps was 0.47 and 0.59 eV, and their concentration was ∼10¹⁷ cm⁻³, which is comparable with the concentration of As clusters determined by transmission electron microscopy. In LT-GaAs samples that were grown at 300°C and contained no arsenic clusters, the activation energy of traps was 0.61 eV. The interrelation between these electron levels and the system of As clusters and point defects in LT-GaAs is discussed. __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 4, 2004, pp. 401–406. Original Russian Text Copyright ? 2004 by Brunkov, Gutkin, Moiseenko, Musikhin, Chaldyshev, Cherkashin, Konnikov, Preobrazhenskii, Putyato, Semyagin.     

Photoluminescence of CuGaTeAs and CuGaSnGa complexes in n-GaAs under resonance polarized excitation

Photoluminescence (PL) of n-type GaAs:Te:Cu and GaAs:Sn:Cu with an electron density of about 10¹⁸ cm^?3 was studied at 77 K. A broad band with a peak at the photon energy near 1.30 eV (GaAs:Te:Cu) or 1.27 eV (GaAs:Sn:Cu) was dominant in the PL spectrum under interband excitation. This band arose from the recombination of electrons with holes trapped by Cu_GaTe_As or Cu_GaSn_Ga complexes. It has been found that the low-energy edge of the excitation spectrum of this PL band at photon energies below ～1.4 eV is controlled by the optical ejection of electrons from a complex into the conduction band or to a shallow excited state. The PL polarization factors upon excitation by polarized light from this spectral range suggest that the complexes have no additional distortions caused by an interaction of a hole bound at the center in the light-emitting state with local phonons of low symmetry. This feature makes Cu_GaTe_As and Cu_GaSn_Ga complexes different from those with the Ga vacancy (V _Ga) instead of Cu_Ga. The dissimilarity arises from the difference in the intensity of interaction of a hole localized at the orbital of an isolated deep-level acceptor in the state corresponding to its preemission state in the complex (Cu _Ga ^? and V _Ga ^2? ) with low-symmetry vibrations of atoms. The perturbation of the hole orbital induced by the donor in the complex practically does not affect this interaction.     

Introducing the Student Editorial Board: Strengthening the future of school psychology and School Psychology Quarterly.

Introduces the new Student Editorial Board for School Psychology Quarterly. Along with the Research Design and Methodology Section and the Book Review Section, which made their inaugural appearance in the Winter 1998 issue, the Student Editorial Board is intended to strengthen both our journal and our field as we move into the next century. It is expected that the Student Editorial Board will result in symbiotic benefits for both our field and the board members themselves. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Could it be over so soon?

The author discusses the end of his editorial term for School Psychology Quarterly. (PsycINFO Database Record (c) 2011 APA, all rights reserved)     

Capacitance studies of multilayer ensembles of InAs QDs in a GaAs matrix

Quasi-static capacitance characteristics of multilayer arrays of vertically coupled InAs quantum dots (QDs) in a GaAs matrix were analyzed on the assumption of a Gaussian energy distribution of the ground state of the QDs. An array of InAs QDs with a characteristic base size of about 20 nm and height of ～3 nm was ordered in the growth direction and had 3, 6, or 10 layers spaced by ～5 nm. It was found that, as the number of layers increases from 3 to 10, the average binding energy of the ground electron state grows from ～80 to ～120 meV and the root mean square deviation characterizing the energy distribution of the levels of this state decreases from ～30 to ～15 meV.     

Dislocation-disclination model of heterogeneous martensite nucleation in transformation-induced-plasticity steels

A dislocation-disclination model is proposed, describing the heterogeneous nucleation of an embryo of hcp martensite at a tilt grain-boundary segment containing some extrinsic dislocations. The total energy gain due to hcp embryo nucleation is analyzed in detail, and the existence of both the equilibrium and critical embryo sizes under varying external conditions (temperature and shear stress) is shown. Depending on the external conditions, these characteristic embryo sizes may vary in wide ranges. So, the equilibrium size increases while the critical size decreases as the external shear stress increases and the temperature decreases. It is also demonstrated that a critical external stress exists which induces athermal embryo nucleation when the nucleation-energy barrier disappears and the terms of equilibrium and critical embryo sizes lose their significance. The critical external stress has been studied, depending on the temperature and characteristic parameters of the grain boundary where the fcc-to-hcp martensite transformation takes place. We have shown, in particular, that the critical external stress increases in direct proportion to both the grain-boundary misorientation angle and temperature.