阿鸠田电站SF35-16/4100水轮发电机绝缘工艺

云南保山阿鸠田电站由三台SF35-16/4100水轮发电机组成,单机额定容量35 MW,额定电压10.5 kV,定、转子绕组均采用F级绝缘。根据用户要求采用了一些新绝缘结构,并进行了大量的工艺试验,生产中选择优质材料,严格控制工艺过程,使已出厂的三台发电机定、转子线圈及定、转子装配的电气绝缘性能优良。文章就机组定、转子绕组绝缘工艺进行了简要的介绍。     

声波测井换能器激发响应实验研究

声波测井换能器的激发响应由换能器振动时所表现出来的动态阻抗和激发电路参数决定。而换能器的动态（阻抗）参数随压电晶体及其装配方式（力学边界条件）改变。为了测量换能器动态参数的影响，采用声波测井仪器常用的压电晶体和升压变压器，通过改变激发脉冲宽度和直流电压进行了实验，结果发现：在换能器两端的瞬态响应中，一共有三个二阶网络响应，分别对应于不同的频率。最低的一个影响声波测井波形的基线、与换能器主频接近的一个决定激发效率以及电路与压电晶体之间的匹配关系，是激发电路设计中比较关键的，其参数可以通过导纳圆测量仪器得到。     

新设备技术在催化裂化装置上的应用

文章介绍了近年来在催化裂化装置上应用的新设备、新技术,如BY型旋风分离器、BSX型旋分式三级旋风分离器、上下拱型三级旋风分离器、下拱型三级旋风分离器、SHS“自蔓延”技术、SWY外取热器、BWJ型喷嘴、自流浇注料、Actehem高耐磨衬里、弓形钢丝纤维、侧拉环锚固钉、分体可拆人孔等的结构特点及实际应用情况。     

A decision support system for interactive decision making - Part II: analysis and output interpretation

For pt.I see ibid., p.42-55 (2003). The development of a comprehensive decision support system, GMCR II, for the systematic study of real-world interactive decision problems is presented. The companion paper (Part I), discusses how GMCR II elicits, stores, and manages conflict models; here (Part II), the focus is on GMCR IIs analysis and output interpretation subsystems. Specifically, this paper describes the powerful and efficient analysis engine contained in GMCR II, its informative output presentation and interpretation facilities, and a number of follow-up analyses. Furthermore, an illustrative case study is used to demonstrate how GMCR II can be conveniently applied in practice.     

基于CB的串行口和接口板端口程序应用

串行口及接口板端口是计算机通信的主要途径 ,也是目前计算机工程测控中通用的基本方法。C Builder (简称CB)编程语言以其功能完备、开发效率高的特点而成为目前流行的程序开发工具 ,介绍了利用CB语言编写串行口和端口通信的程序的方法 ,并对具体的各方法编写了相应的示例。     

Field Static Load Test on Kao-Ping-Hsi Cable-Stayed Bridge

Field load testing is an effective method for understanding the behavior and fundamental characteristics of a cable-stayed bridge. This paper presents the results of field static load tests on the Kao-Ping-Hsi cable-stayed bridge, the longest cable-stayed bridge in Taiwan, before it was open to traffic. A total of 40 loading cases, including the unit and distributed bending and torsion loading effects, were conducted to investigate the bridge behavior. The atmospheric temperature effect on the variations of the main girder deflections was also monitored. The results of static load testing include the main girder deflections, the flexural strains of the prestressed concrete girder, and the variations of the cable forces. A three-dimensional finite-element model was developed. The results show that the bridge under the planned load test conditions has linear superposition characteristics and the analytical model shows a very good agreement with the bridge responses. Further discussion of deflection and cable forces of the design specifications for a cable-stayed bridge is also presented.     

高温氨化合成GaN微晶

分别利用Ga2O3粉末和Ga2O3凝胶作为Ga源,采用NH3为N源,在950℃下,分别将两种反应物与流动的NH3反应20 min合成了GaN微晶。用X射线衍射(XRD)、扫描电子显微镜(SEM)、选择区电子衍射(SAED)对微晶进行结构、形貌的分析,特别是对两种不同途径合成GaN微晶的XRD进行了分析比较。结果表明,当Ga源温度为950℃时两种不同的合成途径均可得到六方纤锌矿结构的GaN单晶颗粒,在氮化温度为850℃和900℃时,利用Ga2O3粉末作为Ga源,仅有少量的Ga2O3转变为GaN;而采用Ga2O3凝胶作为Ga源,在相同的温度下,大部分凝胶经过高温氨化反应均可转化为GaN。     

用于有源电力滤波器的IGBT驱动及保护研究

介绍有源电力滤波器设计中EXB841型绝缘栅场效应晶体管(IGBT)驱动器的驱动原理和电路特点,对IGBT的栅极驱动特性、栅极串联电阻进行了探讨,给出过流保护和过压吸收的有效办法。样机试运行证明此种设计方案可靠、有效。     

分布式光纤拉曼放大器的增益平坦设计

介绍了在波分复用（WDM）系统中分布式光纤拉曼放大器（FRA）的理论分析模型。在此基础上，对增益平坦设计所需考虑的因素进行了分析；最后通过试验证明了它的有效性。     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.