Identification of stress-induced leakage current components and thecorresponding trap models in SiO2 films [MOStransistors]

Time-decay stress-induced leakage current (SILC) has been systematically investigated for the cases of both Fowler-Nordheim (FN) stress and substrate hot-hole stress. From the three viewpoints of the reproducibility of the current component for the gate voltage scan, the change of oxide charge during the gate voltage scan, and the resistance of the current component to thermal annealing, it has been found that time-decay stress-induced leakage current is composed of five current components, regardless of stress type. Trap models corresponding to each current component have been proposed. In addition, it has also been proven that holes generate the electron traps related to one of those current components     

Generation of adaptive gait patterns for quadruped robot with CPG network including motor dynamic model

This paper describes the generation of adaptive gait patterns using new Central Pattern Generators (CPGs) including motor dynamic models for a quadruped robot under various environments. The CPGs act as the flexible oscillators of the joints and adjust joint angles to required values. The CPGs are interconnected with each other and sets of their coupling parameters are adjusted by a genetic algorithm so that the quadruped robot can realize stable and adequate gait patterns. Generation of gait patterns results in the formation of the CPG networks suitable for the formation of not only a straight walking pattern but also of rotating gait patterns. Experimental results demonstrate that the proposed CPG networks are effective for the automatic adjustment of the adaptive gait patterns for the tested quadruped robot under various environments. Furthermore, the target tracking control based on image processing is achieved by combining the general gait patterns. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 155(1): 35–43, 2006; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20225     

Design optimization of tall tubular lead/acid cells based on an analysis of the reaction distribution

In order to estimate the discharge performance of tall lead/acid cells (with tubular positives), changes in current and potential distributions with discharge progress were calculated with a computer on the basis of plate resistance and the current—potential—time relationship between small facing parts of positive and negative plates. The taller the cell, the larger the voltage drop along the plates. Thus, the discharge time became shorter despite a large amount of available active mass remaining in the bottom part of the plates.Various current-collector designs were evaluated, e.g., one with varying resistance at each height; a side conductor placed along the plates and connected to them at the top, centre and bottom, etc. Results revealed an optimum collector design with which the maximum discharge capacity could be obtained. Furthermore, it was shown that the side conductor markedly improved the discharge performance because the active mass near the connecting parts was appreciably used.     

Phase equilibria of quasi-binary systems consisting of multicomponent polymers 1 and 2. IV: Poly(ethylene oxide)/poly(propylene oxide) systems

To confirm the reliability of the theory of phase equibria of multicomponent polymer 1/multicomponent polymer 2 systems (i.e. quasi-binary systems) and the method of computer experiment based on this theory (Brit. Polym. J., 23 (1990)285; 23 (1990)299; Polym. Int., 29 (1992)219), could point curves (CPC), two-phase volume ratios ( R ) and critical solution points (CSP) have been determined experimentally for the quasi-binary mixtures of poly(ethylene oxide) (M¯_w = 647, M¯_w/M¯_n = 1.15; M¯_w and M¯_n, the weight-average and numberaverage molecular weights, respectively) and poly(propylene oxide) (M¯_w = 2028, M¯_w/M¯_n = 1.08; and M_w = 2987, M_w/M_n = 1.13). The hydroxyl end groups of both polymers were methoxylated in advance by the Cooper & Booth method (Polymer, 18 (1977)164). The thermodynamic interaction parameter between both polymers, χ₁₂, and the concentration dependence parameters for the above quasi-binary systems were determined by the method proposed in a previous paper (Brit. Polym. J., 23 (1990)299). CPC, R and CSP values calculated on the basis of the theory are in good agreement with the values determined experimentally.     

A 7 ns 1 Mb BiCMOS ECL SRAM with shift redundancy

A 7-Mb BiCMOS ECL (emitter coupled logic) SRAM was fabricated in a 0.8 μm BiCMOS process. An improved buffer with a high-level output of nearly V_CC is adopted to eliminate the DC current in the level converter circuit, and the PMOS transistor has a wide operating margin in the level converter. The configurable bit organization is realized by using a sense-amplifier switch circuit with no access degradation. A wired-OR demultiplexer for the ×1 output, having the same critical path as the ×4 output circuit, allows for the same access time between the two modes. The ×1 or ×4 mode is electrically selected by the external signal. A simplified programming redundancy technology, shift redundancy, is utilized. Address programming is performed by cutting only one fuse in the shift redundancy. The RAM operates at the ECL-10K level with an access time of 7 ns. and the power dissipation at 50 MHz is 600 mW for the × mode     

A video codec LSI for high-definition TV systems withone-transistor DRAM line memories

A video codec LSI for high-definition television (HDTV) systems has been developed. By using a time-compressed integration encoding technique, it converts a 20.0-MHz bandwidth luminance signal and two 5.0-MHz chrominance signals into a compressed image signal at 48.6-MHz sampling frequency. It is useful in many HDTV application systems, such as 400-Mb/s digital transmission system, a video disk player system, or an analog transmission system. Over 288000 elements, including a 52-kb one-transistor DRAM (dynamic random access memory) line memory specially developed for this LSI, were integrated on a 12.16×12.10-mm² chip. A standard cell layout method and a 1.2-μm CMOS logic LSI process were used     

Novel B-ring modified combretastatin analogues: syntheses and antineoplastic activity

A series of B-ring modified combretastatin analogues were synthesized and their inhibitory activity against microtubule assembly, cytotoxic activity against Colon 26 adenocarcinoma cancer cell line were evaluated. Among these, pyridone derivative (19) showed strong antimitotic activity and cytotoxicity, along with excellent water-solubility.     

Stromal CCL5 Promotes Breast Cancer Progression by Interacting with CCR3 in Tumor Cells

Chemokines secreted from stromal cells have important roles for interactions with carcinoma cells and regulating tumor progression. C-C motif chemokine ligand (CCL) 5 is expressed in various types of stromal cells and associated with tumor progression, interacting with C-C chemokine receptor (CCR) 1, 3 and 5 expressed in tumor cells. However, the expression on CCL5 and its receptors have so far not been well-examined in human breast carcinoma tissues. We therefore immunolocalized CCL5, as well as CCR1, 3 and 5, in 111 human breast carcinoma tissues and correlated them with clinicopathological characteristics. Stromal CCL5 immunoreactivity was significantly correlated with the aggressive phenotype of breast carcinomas. Importantly, this tendency was observed especially in the CCR3-positive group. Furthermore, the risk of recurrence was significantly higher in the patients with breast carcinomas positive for CCL5 and CCR3 but negative for CCR1 and CCR5, as compared with other patients. In summary, the CCL5-CCR3 axis might contribute to a worse prognosis in breast cancer patients, and these findings will contribute to a better understanding of the significance of the CCL5/CCRs axis in breast carcinoma microenvironment.     

Magnesium interlayered diamond coating on silicon

Diamond thin films have been deposited using hot filament chemical vapour deposition technique on manually scratched p-Si(1 0 0) substrate, with and without magnesium interlayer. In spite of magnesium melting point being lower (T_m = 649 °C) than the growth temperature of the substrate (T_s  750 °C) used in these experiments, it was found that high quality diamond films could be grown on Mg covered substrate. A liquid substrate is probably generated during the diamond film growth. Raman spectroscopy analysis exhibited only the triply degenerate, zone centre optical phonon peak at 1333 cm⁻¹ indicating that nearly stress free crystallites were present. Broadening of the Raman peak (11.76 cm⁻¹) indicates that some small crystallites also are present. Scanning electron and atomic force microscopy accompanied by X-ray diffraction analysis where used to compare the details of diamond film growth directly on scratched Si(1 0 0) and Mg interlayered scratched Si(1 0 0) substrates.