Xanthohumol for Human Malignancies: Chemistry,Pharmacokinetics and Molecular Targets

Xanthohumol (XH) is an important prenylated flavonoid that is found within the inflorescence of Humulus lupulus L. (Hop plant). XH is an important ingredient in beer and is considered a significant bioactive agent due to its diverse medicinal applications, which include anti-inflammatory, antimicrobial, antioxidant, immunomodulatory, antiviral, antifungal, antigenotoxic, antiangiogenic, and antimalarial effects as well as strong anticancer activity towards various types of cancer cells. XH acts as a wide ranging chemopreventive and anticancer agent, and its isomer, 8-prenylnaringenin, is a phytoestrogen with strong estrogenic activity. The present review focuses on the bioactivity of XH on various types of cancers and its pharmacokinetics. In this paper, we first highlight, in brief, the history and use of hops and then the chemistry and structure–activity relationship of XH. Lastly, we focus on its prominent effects and mechanisms of action on various cancers and its possible use in cancer prevention and treatment. Considering the limited number of available reviews on this subject, our goal is to provide a complete and detailed understanding of the anticancer effects of XH against different cancers.     

Anatase Sol Prepared from Peroxotitanium Complex Aqueous Solution Containing Niobium or Vanadium

Niobium- or vanadium-doped anatase sols were prepared by hydrothermal treatment of 0.1 mol/dm³ peroxotitanium complex aqueous solutions dissolving 0–10 mol% niobium or vanadium at 100°C for 8 h. Niobium-doping caused the increase of lattice constants of anatase and the shape change of anatase crystal from spindle-like to cubic-like structure, but no change of the optical absorbance. Vanadium-doping caused the decrease of lattice constant of c -axis, the miniaturization of anatase crystal and the increase of optical absorbance at the wavelength from 350–700 nm.     

Chemical potentials of oxygen for three-phase assemblages of CaSiO3(s) + Ca3Si2O7(s) + {CaO + SiO2 + FexO} melt and Ca3Si2O7(s) + Ca2SiO4(s) + {CaO + SiO2 + FexO} melt

By employing an electrochemical technique involving stabilized zirconia as solid electrolyte and Mo + MoO₂ mixture as reference electrode, the equilibrium oxygen partial pressures for three-phase assemblages of CaSiO₃(s) + Ca₃Si₂O₇(s) + {CaO + SiO₂ + Fe_xO} melt and Ca₃Si₂O₇(s) + Ca₂SiO₄(s) + {CaO + SiO₂ + Fe_xO} melt were determined as: - log {P_O2 (CS + C₃S₂ + L)/bar} = - 3.22 13000/(T/K) ± 0.05 - log {P_O2 (C₃S₂ + C₂S + L)/bar} = - 0.92 16400/ (T/K) ± 0.04. respectively, where CS, C₃S₂ and C₂S indicate CaSiO₃(s), Ca₃Si₂O₇(s). and Ca₂SiO₄(s), respectively.     

A feasibility study of a direct-mapping parallel processing method to solve linear equations in load-flow calculation

With the growing size and complexity of power systems, system analysis—such as transients calculation—takes much time. Hence, fast calculation methods are required. Although parallel processing is a hopeful method, there have been difficulties in the parallel solution of linear equations which appear in power-flow calculations by the Newton-Raphson method. This paper aims at the fast calculation of the power-flow problem by means of parallel processing. In order to improve the suitability to the parallel solution of the differential equation in transients calculation, we assume the use of a direct-mapping parallel processing machine to map directly the network of a power system onto a network of processors. Under this assumption, we propose a new parallel-processing-oriented method in which the linear equation is solved by linear iterations between nodes with Aitken acceleration. We simulate the method on three model power systems and compare this Parallel Iterative Method (PIN) with a Parallel Direct Method (PDM) which uses the banded matrix according to the number of operations required. As a result, we can expect that PIM may solve linear equations faster than PDM with m processors, although the PIM might be inferior to the PDM with m × m processors, where m denotes the half-band width of the banded matrix.     

Infrared sensing properties of positive temperature coefficient thermistors with large temperature coefficients of resistivity

Infrared (IR) detecting elements were prepared using positive temperature coefficient (PTC) thermistors with large temperature coefficients of resistivity (α). Their compositions were denoted as Ba_1−x Sr _x Nb_0.003Ti_0.997O₃ + 1 mol % TiO₂ + 0.07 mol %MnO (x=0, 0.2), and their temperature coefficients of resistivity were 78 and 50% K⁻¹, respectively. Their IR sensing properties were measured under the self-regulating heating conditions, and were compared with those of a detector with small α (18 % K⁻¹). It was shown that large α was effective for controlling the element temperature by self-regulating heating and for improving sensitivity. The responsivity,R _v of the element withx=0.2 was 980 VW⁻¹, and was as large as those of pyroelectric detectors. Expressions which normalize the sensitivity and the thermal time constant were derived. From these expressions, criteria for improving some IR sensing properties were obtained.     

Performance of compression/absorption hybrid refrigeration cycle with propane/mineral oil combination

This paper discusses the feasibility of a vapor compression/absorption hybrid refrigeration cycle for energy saving and utilization of waste heat. The cycle employs propane as a natural refrigerant and a refrigeration oil as an absorbent. A prototype of the cycle is constructed, in which a compressor and an absorption unit are combined in series. The performance of the cycle is examined both theoretically and experimentally. Although the solubility of the propane with the oil is not enough as a working pair in the absorption unit, the theoretical calculation shows that the hybrid cycle has a potential to achieve a higher performance in comparison with a simple vapor compression cycle by using the waste heat. In the experiment, the prototype cycle is operated successfully and it is found that an improvement of an absorber is necessary to achieve the good performance close to the theoretical one. The application of an AHE (absorber heat exchanger) can reduce the heat input to a generator. Further examinations on some other combinations of refrigerant/refrigeration oil and additives are desirable.     

A novel method of suppressing the inrush current of transformers by using a series‐connected voltage‐source PWM converter

This paper proposes a novel method of suppressing the inrush current of transformers. A small‐rated voltage‐source PWM converter is connected in series to the transformers through a matching transformer. As the connected PWM converter serves as a resistor for the source current, no inrush phenomena occurs. The required rating of the PWM converter, which serves as the damping resistor for the inrush phenomena, is 1/400 that of the main transformers in single‐phase circuits. In three‐phase circuits, it is 1/900. The basic principle of the proposed method is discussed. Digital computer simulation is implemented to confirm the validity and excellent practicability of the proposed method using the PSCAD/EMTDC. A prototype experimental model is constructed and tested. The experimental results demonstrate that the proposed method can perfectly suppress the inrush phenomena. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 157(4): 56–65, 2006; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20174     

0.25 μm gate length CMOS devices for cryogenic operation

Under cryogenic operation, a low V_th realizes a high speed performance at a greatly reduced power-supply voltage, which is the most attractive feature of Cryo-CMOS. It is very important in sub-0.25 μm Cryo-CMOS devices to reconcile the miniaturization and the low V_th. Double implanted MOSFET's technology was employed to achieve the low V_th while maintaining the short channel effects immunity. We have investigated both the DC characteristics and the speed performance of 0.25 μm gate length CMOS devices for cryogenic operation. The measured transconductances in the saturation region were 600 mS/mm for 0.2 μm gate length n-MOSFET's and 310 mS/mm for 0.25 μm gate length p-MOSFET's at 80 K. The propagation delay time in the fastest CMOS ring oscillator was 22.8 ps at V_dd=1 V at 80 K. The high speed performance at extremely low power-supply voltages has been experimentally demonstrated. The speed analysis suggests that the sub-l0 ps switching of Cryo-CMOS devices will be realized by reducing the parasitic capacitances and through further miniaturization down to 0.1 μm gate length or below