Good dielectric performance and broadband dielectric polarization in Ag,Nb co-doped TiO2

Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO₂-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag⁺/Nb⁵⁺ co-doped (Ag_1/4Nb_3/4)_xTi_1−xO₂ (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 10³ and 1.6 × 10⁴ at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics.     

Improved Algorithm for Solving Inverse Kinematics of Biped Robots

Mobile Networks and Applications - Inverse kinematics is an important basic theory in walking control of biped robot. This study focuses on the parameter setting using the improved algorithm in...     

Resource management in UAV-assisted MEC: state-of-the-art and open challenges

Wireless Networks - Unmanned aerial vehicles (UAV) have been widely used in various fields because of their high mobility and portability. At the same time, due to the rapid development of...     

VO2/GaAs异质结的制备及其光电特性研究

采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_2/pGaAs异质结,研究了不同退火温度和退火时间对VO_2/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_2薄膜,相变前后电阻变化约2个数量级。VO_2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_2相变特性的异质结光电器件的设计与应用提供了可行性。     

Identification and U-control of a state-space system with time-delay

This article presents a state-space model with time-delay to map the relationship between known input-output data for discrete systems. For the given input-output data, a model identification algorithm combining parameter estimation and state estimation is proposed in line with the causality constraints. Consequently, this article proposes a least squares parameter estimation algorithm, and analyzes its convergence for the studied systems to prove that the parameter estimation errors converge to zero under the persistent excitation conditions. In control system design, the U-model based control is introduced to provide a unilateral platform to improve the design efficiency and generality. A simulation portfolio from modeling to control is provided with computational experiments to validate the derived results.     

Correction to: Impact of Size Distribution of Cell Model on the Effective Thermal Conductivity of Saturated Porous Media

International Journal of Thermophysics - The addition of nanoparticles to base fuel may bring about remarkable changes in a thermodynamic process such as evaporation, due to the intensified...     

电信运营商云网规划数字化研究和实现

基于电信运营商数字化转型，系统性地提出了数据驱动的云网发展规划体系，以及六大关键数字化能力构建，设计和实现了一种云网规划数字化平台，该平台可用于实现目标网络精细规划、边缘计算精准预测等场景，并探讨了数字孪生在规划领域的应用前景，对运营商推进云网融合战略、推进高质量发展具有指导和参考意义。     

Comparison of yield and metabolites according to the types of hilling materials utilized during Glehnia littoralis sprout vegetable cultivation

Food Science and Biotechnology - Various hilling materials (rice hulls, pine sawdust, and perlite) were compared to produce sprout vegetables using beach silvertop (Glehnia littoralis Fr. Schm. ex...     

Substrate temperature-controlled precursor reaction mechanism of PEALD-deposited MoOx thin films

Journal of Materials Science - Molybdenum oxide (MoOx) films had been grown by using plasma-enhanced atomic layer deposition (PEALD) with Mo(CO)6 precursor and O2 plasma reactant in a substrate...