Effect of annealing time and substrates nature on the physical properties of CuSbS2 thin films

In this study, the annealing time and substrates nature effects on the physical properties of CuSbS₂ thin films were investigated. CuSbS₂ thin films were prepared on various substrates via thermal evaporation technique. The as^_deposited films were annealed in air for 60 and 120 min at 250 °C. The atomic force microscope micrographs of as^_made and annealed thin films show that the surface morphology is affected by annealing time and substrate variation. X^_ray diffraction results show that crystallinity increased with annealing time. The microstructure parameters: crystallite size and dislocation density were calculated. The optical properties were obtained from the analysis of the experimental recorded transmittance and reflectance spectral data over the wavelength range 300–1800 nm. High absorption coefficients (10⁵–10⁶ cm^?1) are reached. Values of E_g are close to the theoretical optimum for efficient conversion of solar radiation into electrical power making the material suitable for photovoltaic applications.     

Structural Morphological and Optical Properties of SnSb2S4 Thin Films Grown by Vacuum Evaporation Method

SnSb2S4 thin films were prepared from powder by thermal evaporation under vacuum of 1.33 × 10^-4 Pa （ 10^-6 Torr） on unheated glass substrates. The effect of thickness on the structural, morphological and optical properties of SnSb2S4 thin films was investigated. Films thickness measured by interference fringes method varied from 50 to 700 nm. X-ray diffraction analysis revealed that all the SnSb2S4 films were polycrystalline in spite without heating the substrates and the crystallinity was improved with increasing film thickness. The microstructure parameters： crystallite size, strain and dislocation density were calculated. It was observed that the crystallite size increased and the crystal defects decreased with increasing film thickness. In addition, by increasing the film thickness, an enhancement in the surface roughness root-mean-square （RMS） increased from 2.0 to 6.6 nm. The fundamental optical parameters like band gap, absorption and extinction coefficient were calculated in the strong absorption region of transmittance and reflectance spectrum. The optical absorption measurements indicated that the band （Eg） gap of the thin films decreased from 2.10 to 1.65 eV with increasing film thickness. The refractive indexes were evaluated in transparent region in terms of envelope method, which was suggested by Swanepoul. It was observed that the refractive index increased with increasing film thickness.     

Influence of Fe/Zn content on the structural,and optical properties of nontoxic and earth-abundant Cu2ZnxFe1 − xSnS4 (x = 0, 0.25, 0.5, 0.75 and 1) compounds

Journal of Materials Science: Materials in Electronics - In this paper, we report the synthesis of multicomponent Cu2ZnxFe1???xSnS4 (CZFTS)...     

Structural and optical properties of sulfur-annealed CuInS2 thin films

CuInS₂ thin films were deposited by single source vacuum thermal evaporation method on substrates submitted to longitudinal thermal gradient. Some of these films were annealed in sulfur atmosphere and converted into CuInS₂ homogenous layers. Both of the as-deposited and sulfurated films were characterized by X-ray diffraction, optical transmission and reflection measurements. The optical band gap of films after sulfurization was 1.50 eV which is near the optimum value for photovoltaic energy conversion.     

Structural and optical investigations at room temperature of sulfurized thermal evaporated Cu2ZnSnS4

Journal of Materials Science: Materials in Electronics - The present work investigates the structural and optical properties of Cu2ZnSnS4 (CZTS) thin films deposited at room temperature with...     

Effects of excimer laser annealing energy on the properties of thermally evaporated tin antimony sulfide thin films and TEM characterization of the powder

Tin antimony sulfide (TAS) is one of the most promising compounds for the next generation of optoelectronic and thin film photovoltaic devices. TAS material was synthesized by a solid-state reaction using earth-abundant tin, antimony and sulfur elements. The structural properties of the TAS powder were investigated by transmission electron microscopy (TEM). X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and selected electron diffraction (SAED) were employed to establish the crystalline nature of the powder. The TEM observations demonstrated that the powder was polycrystalline in nature with rod-shaped structure. The effects of excimer laser annealing (ELA) at different pulse energies on the structural, morphological and optical properties of thermally evaporated TAS films were investigated. X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy measurements showed that the films annealed by an excimer laser of 248 nm were amorphous for weak energy densities whereas the sample irradiated with 111 mJ/cm^??2 was polycrystalline with a preferential \({\text{(}}\overline {{\text{2}}} {\text{1}}\overline {{\text{3}}} {\text{)}}\) orientation. The ELA effects on the optical properties were also studied in the wavelength range 300–1800 nm by using UV–Vis–NIR spectroscopy. The absorption coefficient of all samples in the fundamental absorption region is higher than 10⁴ cm^?1. We also found that the optical band gap decreases from 2.04 to 1.84 eV after irradiating the thin films under different laser energy densities.     

Characterization of CuIn1 − xAlxS2 thin films prepared by thermal evaporation

Ingots containing single crystals of the quaternary alloys CuIn_1 − xAl_xS₂ (CIAS) were grown by a horizontal Bridgman method for compositions with x = 0, 0.2 and x = 0.4. (CIAS) thin films were prepared by thermal evaporation technique on to glass substrates. Structural and optical properties of the films were studied in function of the Al content. Band gap, and absorption coefficients were determined from the analysis of the optical spectra (transmittance and reflectance as a function of wavelength) recorded by a spectrophotometer. The samples have direct bandgap energies of 1.95 eV (x = 0), 2.06 eV (x = 0,2) and 2.1 eV (x = 0,4). These optical results were correlated with the structural analysis by X-Ray diffraction.     

Structural, optical and electrical properties of CuIn5S8 thin films grown by thermal evaporation method

Stoichiometric compound of copper indium sulfur (CuIn₅S₈) was synthesized by direct reaction of high purity elemental copper, indium and sulfur in an evacuated quartz tube. The phase structure of the synthesized material revealed the cubic spinel structure. The lattice parameter (a) of single crystals was calculated to be 10.667 Å. Thin films of CuIn₅S₈ were deposited onto glass substrates under the pressure of 10⁻⁶ Torr using thermal evaporation technique. CuIn₅S₈ thin films were then thermally annealed in air from 100 to 300 °C for 2 h. The effects of thermal annealing on their physico-chemical properties were investigated using X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), optical transmission and hot probe method. XRD studies of CuIn₅S₈ thin films showed that as-deposited films were amorphous in nature and transformed into polycrystalline spinel structure with strong preferred orientation along the (3 1 1) plane after the annealing at 200 °C. The composition is greatly affected by thermal treatment. From the optical transmission and reflection, an important absorption coefficient exceeds 10⁴ cm⁻¹ was found. As increasing the annealing temperature, the optical energy band gap decreases from 1.83 eV for the as-deposited films to 1.43 eV for the annealed films at 300 °C. It was found that CuIn₅S₈ thin film is an n-type semiconductor at 300 °C.