Mass transfer in polycrystalline ytterbium monosilicate under oxygen potential gradients at high temperatures

Mass transfer in polycrystalline Yb₂SiO₅ wafers with precise composition control was evaluated and analyzed by oxygen permeation experiments at high temperatures using an oxygen tracer. Oxygen permeation proceeded due to mutual grain boundary diffusion of oxide ions and Yb ions without synergistic effects such as acceleration or suppression. The oxygen shielding properties of Yb₂SiO₅ were compared with those of the other line compounds such as Yb₂Si₂O₇ and Al₂O₃ based on the determined mass transfer parameters. It was found that the more preferentially an oxide ion diffuses in the grain boundary compared to the interior of the grain, the greater the effect of suppressing the movement of the oxide ion by applying an oxygen potential gradient becomes.     

Dynamic probe of ZnTe(110) surface by scanning tunneling microscopy

The reconstructed surface structure of the II–VI semiconductor ZnTe (110), which is a promising material in the research field of semiconductor spintronics, was studied by scanning tunneling microscopy/spectroscopy (STM/STS). First, the surface states formed by reconstruction by the charge transfer of dangling bond electrons from cationic Zn to anionic Te atoms, which are similar to those of IV and III–V semiconductors, were confirmed in real space. Secondly, oscillation in tunneling current between binary states, which is considered to reflect a conformational change in the topmost Zn–Te structure between the reconstructed and bulk-like ideal structures, was directly observed by STM. Third, using the technique of charge injection, a surface atomic structure was successfully fabricated, suggesting the possibility of atomic-scale manipulation of this widely applicable surface of ZnTe.     

Supramolecular Zn(II)-Dipicolylamine-Azobenzene-Aminocyclodextrin-ATP Complex: Design and ATP Recognition in Water

Cyclodextrins (CyDs) are water-soluble host molecules possessing a nanosized hydrophobic cavity. In the realm of molecular recognition, this cavity is used not only as a recognition site but also as a reaction medium, where a hydrophobic sensor recognizes a guest molecule. Based on the latter concept, we have designed a novel supramolecular sensing system composed of Zn(II)-dipicolylamine metal complex-based azobenzene (1-Zn) and 3A-amino-3A-deoxy-(2AS,3AS)-γ-cyclodextrin (3-NH₂-γ-CyD) for sensing adenosine-5′-triphosphate (ATP). 1-Zn showed redshifts in the UV-Vis spectra and induced circular dichroism (ICD) only when both ATP and 3-NH₂-γ-CyD were present. Calculations of equilibrium constants indicated that the amino group of 3-NH₂-γ-CyD was involved in the formation of supramolecular 1-Zn/3-NH₂-γ-CyD/ATP. The Job plot of the ICD spectral response revealed that the stoichiometry of 1-Zn/3-NH₂-γ-CyD/ATP was 2:1:1. The pH effect was examined and 1-Zn/3-NH₂-γ-CyD/ATP was most stable in the neutral condition. The NOESY spectrum suggested the localization of 1-Zn in the 3-NH₂-γ-CyD cavity. Based on the obtained results, the metal coordination interaction of 1-Zn and the electrostatic interaction of 3-NH₂-γ-CyD were found to take place for ATP recognition. The “reaction medium approach” enabled us to develop a supramolecular sensing system that undergoes multi-point interactions in water. This study is the first step in the design of a selective sensing system based on a good understanding of supramolecular structures.     

High-resolution long-array thermal ink jet printhead fabricated by anisotropic wet etching and deep Si RIE

This paper describes the fabrication and characterization of a thermal ink jet (TIJ) printhead suitable for high speed and high-quality printing. The printhead has been fabricated by dicing the bonded wafer, which consists of a bubble generating heater plate and a Si channel plate. The Si channel plate consists of an ink chamber and an ink inlet formed by KOH etching, and a nozzle formed by inductively couple plasma reactive ion etching (ICP RIE). The nozzle formed by RIE has squeezed structures, which contribute to high-energy efficiency of drop ejector and, therefore, successful ejection of small ink drop. The nozzle also has a dome-like structure called channel pit, which contributes to high jetting frequency and high-energy efficiency. These two wafers are directly bonded using electrostatic bonding of full-cured polyimide to Si. The adhesive-less bonding provided an ideal shaped small nozzle orifice. Use of the same material (Si substrate) in heater plate and channel plate enables the fabrication of high precision long printhead because no displacement and delamination occur, which are caused by the difference in thermal expansion coefficient between the plates. With these technologies, we have fabricated a 1" long printhead with 832 nozzles having 800 dots per inch (dpi) resolution and a 4 pl. ink drop volume.     

4*4 directional coupler switch matrix with an InGaAlAs/InAlAs multiquantum well structure

A 4*4 directional coupler switch matrix is developed which uses, for the first time, the quantum confined Stark effect of InGaAlAs/InAlAs multiquantum well structures. The rearrangeable nonblocking 4*4 network with six 2*2 switches is shown to be perfectly functional with switching voltages between 5 and 6 V and crosstalk below -17 dB in all the operation states.<>     

Gas Effusion Spectra of Fullerenes

Gas effusion spectra of fullerenes are studied. Three peaks of toluene are found in gas effusion spectra dp/dT-T. Two peaks of oxygen are found in gas effusion spectra dN/dt-T of samples kept in the air after annealing to avoid the toluene. These phenomena confirmed to be reversible are discussed by treating fullerenes as intercalated materials.     

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control).     

Growth of Potassium Titanate Fibers in Flowing N2 Gas

The length of potassium titanate fibers produced by several conventional methods averages 50 μm, with a maximum of 100 μm. Extremely long fibers (most >1000 μm long) were obtained by calcination in N₂ gas flowing at 5.2×10^-4 m/s.     

A 322 MHz random-cycle embedded DRAM with high-accuracy sensing and tuning

A 16 Mb embedded DRAM macro in a fully CMOS logic compatible 90 nm process with a low noise core architecture and a high-accuracy post-fabrication tuning scheme has been developed. Based on the proposed techniques, 61% improvement of the sensing accuracy is realized. Even with the smallest 5 fF/cell capacitance, a 322 MHz random-cycle access while 32 ms data retention time which contributes to save the data retention power down to 60 /spl mu/W are achieved.