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1.
V. V. Strelchuk K. A. Avramenko A. S. Romaniuk L. V. Zavyalova G. S. Svechnikov V. S. Khomchenko N. M. Roshchina V. M. Tkach 《Semiconductors》2014,48(9):1145-1150
Zinc-oxide films are grown by a new nonvacuum chemical method: the pyrolysis of zinc acetylacetonate at a temperature of 280–300°C. The structural, phonon, and emission properties of the ZnO films are studied by X-ray diffraction analysis, scanning electron microscopy, Raman measurements, and photoluminescence spectroscopy. The high-intensity (0002) peak recorded in the X-ray diffraction spectra indicate the predominant orientation of crystallites in the (0001) direction in the ZnO films. From analysis of the E 2 high mode in the Raman spectrum of the ZnO films, the elastic strains ? zz (~3.2 × 10?3) and the quality of the crystal structure are determined. The characteristics of the pyrolytic ZnO films are compared with the corresponding characteristics of ZnO films grown by molecular-beam epitaxy. As a result, the possibility of growing polycrystalline ZnO films of rather high quality by a practically feasible low-temperature technique is demonstrated. 相似文献
2.
V. V. Strelchuk V. P. Kladko E. A. Avramenko O. F. Kolomys N. V. Safryuk R. V. Konakova B. S. Yavich M. Ya. Valakh V. F. Machulin A. E. Belyaev 《Semiconductors》2010,44(9):1199-1210
High-resolution X-ray diffraction analysis and scanning confocal Raman spectroscopy are used to study the spatial distribution
of strains in the In
x
Ga1 − x
N/GaN layers and structural quality of these layers in a multilayered light-emitting diode structure produced by metal-organic
chemical vapor deposition onto (0001)-oriented sapphire substrates. It is shown that elastic strains almost completely relax
at the heterointerface between the thick GaN buffer layer and In
x
Ga1 − x
N/GaN buffer superlattice. It is established that the GaN layers in the superlattice are in a stretched state, whereas the
alloy layers are in a compressed state. In magnitude, the stretching strains in the GaN layers are lower than the compressive
strains in the InGaN layers. It is shown that, as compared to the buffer layers, the layers of the superlattice contain a
smaller number of dislocations and the distribution of dislocations is more randomly disordered. In micro-Raman studies on
scanning through the thickness of the multilayered structure, direct evidence is obtained for the asymmetric gradient distributions
of strains and crystal imperfections of the epitaxial nitride layers along the direction of growth. It is shown that the emission
intensity of the In
x
Ga1 − x
N quantum well is considerably (more than 30 times) higher than the emission intensity of the GaN barrier layers, suggesting
the high efficiency of trapping of charge carriers by the quantum well. 相似文献
3.
V. V. Voitovych V. B. Neimash N. N. Krasko A. G. Kolosiuk V. Yu. Povarchuk R. M. Rudenko V. A. Makara R. V. Petrunya V. O. Juhimchuk V. V. Strelchuk 《Semiconductors》2011,45(10):1281-1285
The effect of tin impurity on the structure and optical properties of thin-film amorphous silicon is investigated. It is established
that tin impurity accelerates crystallization of amorphous silicon. Immediately after deposition of a film onto a substrate
at a temperature of ∼300°C, there is a crystalline phase of silicon in samples with tin. High-vacuum annealing at 350–750°C
leads to growth of the crystalline phase in films with tin: nanocrystals grow in size from ∼3.0 to 4.5 nm. At the same time,
in films without tin, only the degree of the short-range order increases. Silicon film without tin remains amorphous over
the entire range of annealing temperatures. 相似文献
4.
M. Ya. Valakh N. V. Vuychik V. V. Strelchuk S. V. Sorokin T. V. Shubina S. V. Ivanov P. S. Kop’ev 《Semiconductors》2003,37(6):699-704
Intense anti-Stokes photoluminescence was observed at low temperatures in CdSe/ZnSe nanostructures with separate CdSe inserts in a ZnSe matrix; the nominal thickness of these inserts amounted to 1.5 and 0.6 monolayers. It is shown that the intensity of an anti-Stokes band excited by the photons of energies considerably lower than the band’s peak is quadratic in the excitation power; in the case of resonance excitation, a weaker dependence is obtained. A mechanism behind the excitation of anti-Stokes photoluminescence is suggested on the basis of nonlinear two-step two-photon absorption via the deep states of the defect centers including cation vacancies localized at the barrier-nanoisland interface. 相似文献
5.
Vasin A. V. Rusavsky A. V. Mamykin S. V. Nikolenko A. S. Strelchuk V. V. Yatskiv R. Grym J. Gudimenko A. I. Kladko V. P. Tyagulskyy I. P. Lorinčik J. Elantyev I. Nazarov A. N. 《Journal of Materials Science: Materials in Electronics》2022,33(9):6421-6431
Journal of Materials Science: Materials in Electronics - A comparative study of the effects of methane and hydrogen as reactive agents on the structural, optical, and electrical properties of ZnO... 相似文献
6.
R. V. Konakova O. F. Kolomys O. S. Lytvyn O. B. Okhrimenko V. V. Strelchuk A. M. Svetlichnyi L. G. Linets 《Semiconductors》2012,46(9):1221-1224
The surface morphology and the Raman and photoluminescence spectra of a SiC/por-SiC/TiO2 structure before and after rapid thermal annealing are studied. It is shown that rapid thermal annealing brings about the appearance of new bands in the Raman spectrum; these bands are characteristic of carbon compounds. An analysis of the spectra of photoluminescence excited by radiation with an energy lower than that of the band-gap energy in 6H-SiC has shown that the appearance of photoluminescence in porous silicon carbide is related to impurity states, which are formed at the surface due to products of chemical reactions in the course of etching. 相似文献
7.
V.?V.?Strelchuk A.?S.?NikolenkoEmail author P.?M.?Lytvyn V.?P.?Kladko A.?I.?Gudymenko M.?Ya.?Valakh Z.?F.?Krasilnik D.?N.?Lobanov A.?V.?Novikov 《Semiconductors》2012,46(5):647-654
Atomic-force microscopy, micro-Raman spectroscopy, and high resolution X-ray diffraction are applied to study the spatial
ordering in single layers of SiGe nanoislands grown on a strained Si1 − x
Ge
x
buffer sublayer. It is shown that, apart from stimulating the spatial ordering of nanoislands, the introduction of a Si1 − x
Ge
x
sublayer leads to an enhanced role for interdiffusion processes. An unusually high increase in the volume of nanoislands
in the process of the epitaxy is related to the anomalously strong diffusion from the buffer sublayer into the islands that
is induced by nonuniform fields of elastic strains. The anisotropy of the islands shape and spatial ordering is discussed
in terms of the anisotropy of the diffusion processes in spatially nonuniform fields of elastic strains. 相似文献
8.
Venhryn Yu. I. Popovych I. D. Serednytski A. S. Kolomys O. F. Luchechko A. P. Strelchuk V. V. 《Journal of Materials Science: Materials in Electronics》2022,33(14):10715-10722
Journal of Materials Science: Materials in Electronics - The ZnO and TiO2 nanopowders have been prepared by means of the pulsed laser reactive ablation of metallic (Zn, Ti) targets. The Structural,... 相似文献
9.
R. V. Konakova A. F. Kolomys O. B. Okhrimenko V. V. Strelchuk A. M. Svetlichnyi M. N. Grigoriev B. G. Konoplev 《Semiconductors》2014,48(5):621-624
The effect of laser radiation on the characteristics of amorphous silicon films on glassy or quartz substrates are studied by Raman spectroscopy. It is established that an increase in the laser-treatment power yields a phase transition from amorphous silicon to nanocrystalline silicon. The variation in the relation between the nanocrystalline and amorphous silicon fractions in the films is described in the context of the critical impact model. 相似文献
10.
Mykola V Sopinskyy Viktoriya S Khomchenko Viktor V Strelchuk Andrii S Nikolenko Genadiy P Olchovyk Volodymyr V Vishnyak Viktor V Stonis 《Nanoscale research letters》2014,9(1):182
Carbon films on the Si/SiO2 substrate are fabricated using modified method of close space sublimation at atmospheric pressure. The film properties have been characterized by micro-Raman and X-ray photoelectron spectroscopy and monochromatic ellipsometry methods. Ellipsometrical measurements demonstrated an increase of the silicon oxide film thickness in the course of manufacturing process. The XPS survey spectra of the as-prepared samples indicate that the main elements in the near-surface region are carbon, silicon, and oxygen. The narrow-scan spectra of C1s, Si2p, O1s regions indicate that silicon and oxygen are mainly in the SiO
x
(x ≈ 2) oxide form, whereas the main component of C1s spectrum at 284.4 eV comes from the sp2-hybridized carbon phase. Micro-Raman spectra confirmed the formation of graphene films with the number of layers that depended on the distance between the graphite source and substrate. 相似文献