Analysis of the mechanism of die soldering in aluminum die casting

A mechanism of soldering of an aluminum alloy die casting to a steel die is proposed. A soldering critical temperature is postulated, at which iron begins to react with aluminum to form an aluminum-rich liquid phase and solid intermetallic compounds. The liquid joins the die with the casting upon solidification. The critical temperature is determined by the elements in both the casting alloy and the die material and is equal to the solidus temperature of the resulting alloy. The critical temperature is used to predict the onset of die soldering, and the local liquid fraction is related to the soldering tendency. Experiments have been carried out to validate the concept and to determine the critical temperature for die soldering in an iron-aluminum system. Thermodynamic calculations are used to determine the critical temperature and soldering tendency for the cases of pure aluminum and a 380 alloy in a steel mold. Factors affecting the soldering tendency are discussed, and methods for reducing die soldering are suggested.     

A Low-Supply-Voltage CMOS Sub-Bandgap Reference

A low-power (21 $muhbox{W}$ ) bandgap reference source that is operable from a nominal supply voltage of 1.4 V is described. The circuit provides an output voltage equal to the bandgap voltage having a low output resistance and allows resistive loading. It does not use resistors or operational amplifiers. Thus, the design is suitable for fabrication in any digital CMOS technology. The circuit uses a current conveyor and current mirrors to convert the proportional to absolute temperature voltage into a current using a MOSFET. The current is converted back to a voltage by using the functional inverse of the FET $v-i$ characteristics. This makes the voltage gain linear and temperature independent. The absence of back-gate bias is the reason for achieving the low supply voltage of operation. Simulation results using the transistor models for the 0.18-$mu$m TSMC process show that the voltage-variation over the temperature range 0 to 100 $^{circ} {hbox {C}}$ is $≪$1 mV.      

Evolution of multiprotocol label switching

Multiprotocol label switching (MPLS) is rapidly emerging as an Internet Engineering Task Force (IETF) standard intended to enhance the speed, scalability, and service provisioning capabilities in the Internet. MPLS uses the technique of packet forwarding based on labels, to enable the implementation of a simpler high-performance packet forwarding engine. This also decouples packet forwarding from routing, facilitating the provision of varied routing services independent of the packet forwarding paradigm. The authors track the evolution of this technology in relation to other existing technologies. Then an overview of the MPLS architecture and design is provided. In addition, some of the work that was a precursor to MPLS is discussed, as well as related issues and debates     

Childhood thyroid cancer. Characteristics and long-term outcome in children irradiated for benign conditions of the head and neck

OBJECTIVE: To determine the characteristics and long-term outcome of radiation-induced thyroid cancer in children. DESIGN: Retrospective review of a cohort of 4296 irradiated patients who received childhood radiation treatment to the head and neck area at the same hospital. PATIENTS: Forty-one children who were younger than 20 years when thyroid cancer developed in them and 77 adults in whom thyroid cancer developed. All 118 cases were diagnosed before 1974 and were followed up for a median of 19.4 years. RESULTS: Children presented with clinically palpable lymph nodes more often than adults (30.7% vs 15.1%, P = .05) and had more recurrences (39% vs 16%, P = .05). Despite these frequent recurrences, only one patient (an adult) died of thyroid cancer. Seventy percent of the recurrences occurred during the first 10 years of follow-up, but recurrences continued after 20 years. The adults had previously identified factors that predicted the risk of recurrences, but none could be identified in the children. CONCLUSION: The presentation and relatively good outcome of radiation-induced thyroid cancer in children is similar to that in nonirradiated children. Frequent and late recurrences call for lifelong follow-up.     

Modeling the tensile properties in β-processed α/β Ti alloys

The development of a set of computational tools that permit microstructurally based predictions for the tensile properties of commercially important titanium alloys, such as Ti-6Al-4V, is a valuable step toward the accelerated maturation of materials. This paper will discuss the development of neural network models based on a Bayesian framework to predict the yield and ultimate tensile strengths of Ti-6Al-4V at room temperature. The development of such rules-based model requires the population of extensive databases, which in the present case are microstructurally based. The steps involved in database development include producing controlled variations of the microstructure using novel approaches to heat treatments, the use of standardized stereology protocols to characterize and quantify microstructural features rapidly, and mechanical testing of the heat-treated specimens. These databases have been used to train and test neural network models for prediction of tensile properties. In addition, these models have been used to identify the influence of individual microstructural features on the tensile properties, consequently guiding the efforts toward development of more robust mechanistically based models. Based on the neural network model, it is possible to investigate the influence of individual microstructural features on the tensile properties, and in certain cases these dependencies can point toward unrecognized phenomena. For example, the apparently unexpected trend of increase in tensile strength with increasing prior β-grain size has led to the determination of the pronounced role of the basketweave microstructure in strengthening these alloys, especially in case of larger prior β grains. This article is based on a presentation made in the symposium “Computational Aspects of Mechanical Properties of Materials,” which occurred at the 2005 TMS Annual Meeting, February 13–17, 2005, in San Francisco, CA, under the auspices of the MPMD-Computational Materials Science & Engineering (Jt. ASM-MSCTS) Committee.     

Activation energy determination from low-temperature CV dispersion[semiconductor devices]

The response of semiconductor devices at low temperatures to changes in the voltage across the depletion region is limited by the dielectric relaxation time of the majority carriers in the bulk region. This results in a dispersion of the C-V curves at low temperatures. In this paper, we report a study of the dispersion seen in the accumulation and depletion regions of the C-V curve in n- and p-channel MOS transistors as well as in reverse biased one-sided abrupt junctions. From the admittance measured as a function of temperature and frequency, the dopant energy level is determined. The values of the activation energy measured using the diodes agree well with the corresponding values obtained using MOS devices     

Microstructural effects on the tensile properties and deformation behavior of a Ti-48Al gamma titanium aluminide

The effects of microstructure on the tensile properties and deformation behavior of a binary Ti-48Al gamma titanium aluminide were studied. Tensile-mechanical properties of samples with microstructures ranging from near γ to duplex to fine grained, near- and fully-lamellar were determined at a range of temperatures, and the deformation structures in these characterized by transmission electron microscopy (TEM). Microstructure was observed to exert a strong influence on the tensile properties, with the grain size and lamellar volume fraction playing connected, but complex, roles. Acoustic emission response monitored during the tensile test revealed spikes whose amplitude and frequency increased with an increase in the volume fraction of lamellar grains in the microstructure. Analysis of failed samples suggested that microcracking was the main factor responsible for the spikes, with twinning providing a minor contribution in the near-lamellar materials. The most important factor that controls ductility of these alloys is grain size. The ductility, yield stress, and work-hardening rate of the binary Ti-48Al alloy exhibit maximum values between 0.50 and 0.60 volume fraction of the lamellar constituent. The high work-hardening rate, which is associated with the low mobility of dislocations, is the likely cause of low ductility of these alloys. In the near-γ and duplex structures, slip by motion of 1/2<110] unit dislocations and twinning are the prevalent deformation modes at room temperature (RT), whereas twinning is more common in the near- and fully-lamellar structures. The occurrence of twinning is largely dictated by the Schmid factor. The 1/2<110] unit dislocations are prevalent even for grain orientations for which the Schmid factor is higher for <101] superdislocations, though the latter are observed in favorably oriented grains. The activity of both of these systems is responsible for the higher ductility at ambient temperatures compared with Al-rich single-phase γ alloys. A higher twin density is observed in lamellar grains, but their propagation depends on the orientation and geometry of the individual γ lamellae. The increase in ductility at high temperatures correlates with increased activity of 1/2<110] dislocations (including their climb motion) and twin thickening. The role of microstructural variables on strength, ductility, and fracture are discussed. This article is based on a presentation made in the symposium entitled “Fundamentals of Structural Intermetallics,” presented at the 2002 TMS Annual Meeting, February 21–27, 2002, in Seattle, Washington, under the auspices of the ASM and TMS Joint Committee on Mechanical Behavior of Materials.     

Low-temperature CV dispersion in MOS devices

A study is reported of the dispersion seen in the accumulation and depletion regions, of the C-V curve in n-channel MOS devices in the temperature range 30-45 K. It is concluded that the dispersion observed in these experiments is caused by time-constant effects, due to the substrate resistance and not caused by dopant atom emission time constant effects. From the measured admittance as a function of temperature and frequency, the acceptor energy level is determined to within ±0.4 meV