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The optimization of electrolytes and the material removal mechanisms for Cu electrochemical mechanical planarization (ECMP) at different pH values including 5-methyl-1H-benzotriazole (TTA), hydroxyethylidenediphosphoric acid (HEDP), and tribasic ammonium citrate (TAC) were investigated by electrochemical techniques, X-ray photoelectron spectrometer (XPS) analysis, nano-scratch tests, AFM measurements, and polishing of Cu-coated blanket wafers. The experimental results show that the planarization efficiency and the surface quality after ECMP obtained in alkali-based solutions are superior to that in acidic-based solutions, especially at pH=8. The optimal electrolyte compositions (mass fraction) are 6% HEDP, 0.3% TTA and 3% TAC at pH=8. The main factor affecting the thickness of the oxide layer formed during ECMP process is the applied potential. The soft layer formation is a major mechanism for electrochemical enhanced mechanical abrasion. The surface topography evolution before and after electrochemical polishing (ECP) illustrates the mechanism of mechanical abrasion accelerating electrochemical dissolution, that is, the residual stress caused by the mechanical wear enhances the electrochemical dissolution rate. This understanding is beneficial for optimization of ECMP processes. 相似文献
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Low dielectric constant materials/Cu interconnects integration technology provides the direction as well as the challenges in the fabrication of integrated circuits(IC) wafers during copper electrochemical-mechanical polishing(ECMP). These challenges arise primarily from the mechanical fragility of such dielectrics, in which the undesirable scratches are prone to produce. To mitigate this problem, a new model is proposed to predict the initiation of scratching based on the mechanical properties of passive layer and copper substrate. In order to deduce the ratio of the passive layer yield strength to the substrate yield strength and the layer thickness, the limit analysis solution of surface scratch under Berkovich indenter is used to analyze the nano-scratch experimental measurements. The modulus of the passive layer can be calculated by the nano-indentation test combined with the FEM simulation. It is found that the film modulus is about 30% of the substrate modulus. Various regimes of scratching are delineated by FEM modeling and the results are verified by experimental data. 相似文献
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针对车道线检测技术在车道偏离预警、自动泊车和车道变换等各种辅助驾驶系统中的重要作用,国内外专家学者对车道线检测技术做了较多的研究,但是近年来少见有关于车道线检测的综述,因此本文主要阐述了近几年国内外机器视觉的车道线检测研究进展。首先简单介绍了机器视觉的车道线检测的基本流程;其次重点阐述了基于特征、基于模型和基于深度学习三种典型方法的基本检测原理和研究现状,并对比三种典型研究方法;最后,提出了机器视觉的车道线检测方法主要存在的问题,并针对问题提出未来的发展方向。 相似文献
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球头衬碗结构接触应力有限元分析 总被引:1,自引:0,他引:1
本文采用有限元方法研究了球头及衬碗结构接触应力问题.为获得球头衬碗厚度及其间隙对球头及衬碗接触应力的影响,采用有限元方法建立接触力学模型,继而通过计算分析获得了球头与衬碗接触应力随球头衬碗厚度及其间隙的变化规律.以某轿车采用的球头为例,利用上述接触力学模型分析后发现,通过适当增加球头衬碗厚度并提高加工精度,保持其在使用过程中最佳接触应力状态,能够延长球头衬碗使用寿命,减少失效的发生. 相似文献
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根据电化学分析,5-甲基苯并三氮唑(m-BTA)的腐蚀抑制能力要高于苯并三唑(BTA)的。当羟基乙叉二膦酸(HEDP)电解液中同时含有m-BTA及氯离子时,其抑制解离能力比只含有m-BTA的更好,即使施加更高的阳极氧化电位依然能保持良好的抑制能力。由电化学阻抗谱法、纳米划痕实验以及能谱分析结果得知,m-BTA抑制能力的提升是因为整体钝化膜厚度的增加而引起的。由X射线光电子能谱分析得知,氯离子与m-BTA钝化层形成[Cu(I)Cl(m-BTA)]n高分子化合物,使得整体钝化层厚度增加。因此,在含有m-BTA的HEDP电解液中添加氯离子有助于m-BTA钝化层抑制能力的增强,进而更有效的电位操作区间得到扩展。 相似文献
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为研究7A04铝合金微弧氧化膜在典型介质中的耐磨性与耐腐蚀性,制作了处理时间为1、1.5、2h的7A04微弧氧化膜.利用SiC作配副,在全程变向式摩擦磨损试验机上获得了对应的摩擦系数,并采用三电极体系,在3种典型的腐蚀性介质0.3mol/L的H2SO4溶液、质量分数3.5%的NaCl溶液和质量分数3.5%的NaOH溶液中,通过摩擦电化学特性曲线,研究了不同试件在相同润滑条件下对摩擦系数和电化学参数的影响.通过比较试件的X射线衍射谱及SEM形貌分析了7A04表面层磨损的原因.结果表明,微弧氧化膜的耐磨性能、减摩性能显著优于未处理的基体材料,并随处理时间的增加而增强;膜层中α-Al2O3相含量、膜层结构及其耐腐蚀性和耐磨性都与处理时间密切相关. 相似文献
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分析哈尔滨市大货车肇事的原因,并针对各原因整合治理措施,建立大货车肇事的层次分析模型,利用层次分析法获得各整治措施的权重,得出提高从业资质、加强驾驶员上岗前的培训教育为最有效的整治措施的结论。 相似文献
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