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M. M. Zverev N. A. Gamov D. V. Peregoudov V. B. Studionov E. V. Zdanova I. V. Sedova S. V. Gronin S. V. Sorokin S. V. Ivanov P. S. Kop’ev 《Semiconductors》2008,42(12):1440-1444
Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser’s active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of ~0.65 μm. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of ~8.5% are attained for the electron-beam energy of 23 keV. 相似文献
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A. A. Lebedev A. M. Strel’chuk D. V. Davydov N. S. Savkina A. N. Kuznetsov L. M. Sorokin 《Technical Physics Letters》2002,28(9):792-794
The electrical characteristics of (p)3C-SiC-(n)6H-SiC epitaxial heterostructures obtained by sublimation epitaxy in vacuum are studied. The band discontinuities are determined and the energy band diagram of the heterojunction is constructed. It is shown that the obtained heterostructure offers a promising material for high electron mobility transistors. 相似文献
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A. R. Sorokin 《Technical Physics Letters》2006,32(5):417-420
A highly stable sparkless discharge can be obtained using preionization by an electron beam, photons, and plasma electrons formed in a barrier open discharge, for which a grid electrode (that also serves as a cathode for the main discharge) is situated immediately on a dielectric-coated electrode surface. In the standard gas mixture for an ArF laser at a pressure of 2.5 bar, an energy deposition of 2.5 J/cm3 in a 12-ns pulse at a specific power of 210 MW/cm3 was achieved. The results are of interest for the development of technological excimer lasers operating at a high pulse repetition rate. 相似文献
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A. A. Lebedev P. L. Abramov N. V. Agrinskaya V. I. Kozub A. N. Kuznetsov S. P. Lebedev G. A. Oganesyan L. M. Sorokin A. V. Chernyaev D. V. Shamshur 《Technical Physics Letters》2007,33(12):1035-1037
Epitaxial 3C-SiC films have been grown on 6H-SiC substrates by sublimation epitaxy in vacuum. The Hall effect in these heterostructures and their magnetoresistance have been measured in a temperature range from 1.4 to 300 K. At liquid-helium temperatures, the samples are characterized by low resistance and exhibit negative magnetoresistance in weak fields (~1 T). Analysis of the experimental results suggests that the low resistance of samples is most probably due to the metal-insulator transition in the epitaxial 3C-SiC films. 相似文献
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N. N. Aprausheva N. Mollaverdi S. V. Sorokin 《Pattern Recognition and Image Analysis》2006,16(4):677-681
Several theorems on sufficient unimodality conditions are formulated for a sum of k normal distributions with the same variance and with different mean values μ
i
, i = 1, ..., k, 2 ≤ k < ∞, taken with their a priori probabilities πi. On the basis of these theorems, estimates for the lower and upper bounds for the mode numbers m are obtained for k ≥ 3 in the case when the mixture contains k* components, 2 ≤ k* < k, satisfying the unimodality conditions.
Aprausheva Nina Nikolaevna (b. 1940). Graduated from the Moscow State University (Department of Mechanics and Mathematics) in 1966. In 1982, defended the Cand.
Sci. thesis “On the Application of Mixtures of Normal Distributions in Pattern Recognition.”
Senior scientist at Dorodnicyn Computing Center, Russian Academy of Sciences.
Scientific interests: mathematical statistics, computational mathematics, mathematical methods in pattern recognition, and
decision theory (about 70 publications).
Member of Association of Pattern Recognition.
Mollaverdi Naser (b. 1967). Graduated from the Isfahan University of Technology (Iran) in 1990. In 1995, graduated from the Educational University (Teheran,
Iran).
Third-year scholar at Moscow State University (Department of Computational Mathematics and Cybernetics).
Scientific interests: computational mathematics, pattern recognition, programming, and statistics (12 publications).
Sorokin Stanislav Viktorovich (b. 1947). Graduated from Moscow State University (Department of Computational Mathematics and Cybernetics) in 1971.
Programmer at Dorodnicyn Computing Center, Russian Academy of Sciences.
Scientific interests: computational mathematics, system programming, and pattern recognition (15 publications). 相似文献