排序方式: 共有17条查询结果,搜索用时 15 毫秒
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研究了重离子单粒子辐照(Single event effect,SEE)效应对超薄栅氧化层(1.2 nm厚度)的斜坡击穿电压(Voltage ramp dielectric breakdown,VRDB)的影响情况。采用209Bi(离子能量为1 043.7 MeV)对65 nm CMOS电容进行(1~2)×107ion/cm2总注量的重离子辐射试验,并在辐射过程中进行VRDB试验。试验结果发现,经过209Bi重离子辐射后,超薄栅CMOS电容的泄漏电流略微增大,跨导-电压曲线稍有畸变;进行累积模式和反型模式的斜坡击穿测试,发现栅氧化层的斜坡击穿电压减小近5%。通过扫描电子显微镜(SEM)检查发现,重离子辐照后栅氧化层中形成微泄漏路径,导致其击穿电压降低,并强烈影响超薄栅氧化层的长期可靠性。 相似文献
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开展65 nm高速大容量静态随机存取存储器(SRAM)大气中子单粒子效应特性及试验评价技术研究,基于4 300 m高海拔地区大面积器件阵列实时测量试验,突破效应甄别、智能远程测控等关键技术,在153 d的试验时间内共观测到错误43次,其中器件内单粒子翻转39次,多单元翻转(MCU)在单粒子翻转中占比23%,最大的MCU为9位。对高能中子、热中子和封装α粒子的贡献比例进行了分析,并基于多地中子通量数据,推演得到北京地面和10 km高空应用时的单位翻转(SBU)和MCU失效率(FIT)。发现地面处软错误的主要诱因为封装α粒子,随着海拔的增高,大气中子对软错误的贡献比例明显增大;MCU全部由高能中子引起,北京10 km高空处的MCU FIT值明显增大,其占比由地面的8%增大至26%。结合器件版图布局,对MCU产生机理进行了深入分析。最后,提出一种目标导向的存储器软错误加固策略优化方法。 相似文献
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建立了一种28 nm HPL硅工艺超大规模SRAM型FPGA的单粒子效应测试方法。采用静态测试与动态测试相结合的方式,通过ps级脉冲激光模拟辐照实验,对超大规模FPGA进行单粒子效应测试。对实验所用FPGA的各敏感单元(包括块随机读取存储器、可配置逻辑单元、可配置存储器)的单粒子闩锁效应和单粒子翻转极性进行了研究。实验结果证明了测试方法的有效性,揭示了多种单粒子闩锁效应的电流变化模式,得出了各单元的单粒子效应敏感性区别。针对块随机读取存储器、可配置逻辑单元中单粒子效应翻转极性的差异问题,从电路结构方面进行了机理分析。 相似文献
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以粉煤灰、镁渣等工业固体废弃物为原料,辅以适量的激发剂,制备成镁渣-粉煤灰-水泥复合胶凝材料,研究了镁渣的比表面积,镁渣/粉煤灰掺比对复合胶凝体系的凝结时间和力学性能的影响.研究表明,胶凝材料的强度随着镁渣的细度、镁渣比表面积的增大而增加,少量水泥能够有效地激发出钢渣-粉煤灰体系潜在的活性,单掺水泥的钢渣-粉煤灰体系最优配比为:钢渣/粉煤灰=5∶5,水泥掺量为15%,石膏为10%. 相似文献
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Single event upsets (SEUs) induced by heavy ions were observed in 65 nm SRAMs to quantitatively evaluate the applicability and effectiveness of single-bit error correcting code (ECC) utilizing Hamming Code. The results show that the ECC did improve the performance dramatically, with the SEU cross sections of SRAMs with ECC being at the order of 10-11 cm2/bit, two orders of magnitude higher than that without ECC (at the order of 10-9 cm2/bit). Also, ineffectiveness of ECC module, including 1-, 2- and 3-bits errors in single word (not Multiple Bit Upsets), was detected. The ECC modules in SRAMs utilizing (12, 8) Hamming code would lose work when 2-bits upset accumulates in one codeword. Finally, the probabilities of failure modes involving 1-, 2- and 3-bits errors, were calcaulated at 39.39%, 37.88% and 22.73%, respectively, which agree well with the experimental results. 相似文献
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The Dark Matter Particle Explorer (DAMPE) is being constructed as a scientific satellite to observe high en- ergy cosmic rays in space. As a crucial detector of DAMPE, the BGO calorimeter consists of 1848 PMT dynode signals which bring difficulties in front-end electronics on the space-limited and power-limited satellite platform. To overcome the challenge, a low-noise, low-power and high-integration ASIC chip, named VA32HDR14.2, is taken into account. In order to evaluate the radiation tolerance of the chip in space radiation environment, both single event effect (SEE) and total ionizing dose (TID) tests were performed. The SEE test result shows that the effective linear energy transfer (LET) threshold of single event latch-up (SEL) of the chip is around 23.0 MeV- cm2/mg, which is relatively sensitive, thus protection methods must be taken in the electronics design, The TID test result shows that the TID performance of the chip is higher than 25 Krad(Si), which satisfies the design specification. 相似文献
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碱激发镁渣胶凝材料的研究 总被引:1,自引:0,他引:1
通过改变碱掺量,碱激发剂种类,水玻璃的模数,研究了碱激发剂对镁渣复合胶凝材料性能的影响。表明加入一定的激发剂能显著提高了镁渣的活性,也提高了镁渣胶凝材料的性能;凝结时间随着碱掺量增加而变短,水玻璃的激发效果要优于KOH,NaOH;模数为1.2水玻璃在掺量为10%的激发作用最好,胶凝材料力学性能也最强。 相似文献