Room-temperature lasing operation of GaInNAs-GaAssingle-quantum-well laser diodes

We have succeeded in demonstrating continuous-wave (CW) operation of GaInNAs-GaAs single-quantum-well (SQW) laser diodes at room temperature (RT). The threshold current density was about 1.4 kA/cm², and the operating wavelength was approximately 1.18 μm for a broad-stripe geometry. Evenly spaced multiple longitudinal modes were clearly observed in the lasing spectrum. The full-angle-half-power far-field beam divergence measured parallel and perpendicular to the junction plane was 4.5° and 45°, respectively. A high characteristic temperature (T₀) of 126 K under CW operation and a small wavelength shift per ambient temperature change of 0.48 nm/°C under pulsed operation were obtained. These experimental results indicate the applicability of GaInNAs to long-wavelength laser diodes with excellent high-temperature performance     

Reversible Reaction with CO2 and Control of CO2 Absorption/Desorption Properties of Ba2(Fe1−xInx)2O5 Solid Solutions

Ba₂(Fe_1?xIn_x)₂O₅ was prepared by a solid‐state reaction under a N₂ flow. It was revealed that the solid solutions had a cubic perovskite structure with disordered oxygen vacancies at room temperature. Thermogravimetry and X‐ray diffraction measurements revealed that Ba₂(Fe_1?xIn_x)₂O₅ can reversibly react with CO_2. It was found that the equilibrium temperature of the reaction could be controlled by preparing solid solution.     

40 Gbit/s packet bit error ratio and loss real-time measurement for ultrahigh-speed packet switched network

A novel packet bit error rate (BER) and loss measurement method and system is proposed. A proposed 40 Gbit/s packet BER and loss measurement system is expressed in detail. A 40 Gbit/s BER and loss measurement with various conditions is demonstrated experimentally. In real time, only the payload part of a packet and burst stream with fluctuated guard time is evaluated. The BER and packet loss of a randomly received packet sequence due to routing and buffering can be also evaluated by the measurement system. A 10 Gbit/s packet BER and loss measurement with optical label switching, buffering, and preamble-free optical packet 3R are demonstrated experimentally.     

Optical properties of photoluminescent polycrystalline CuLa0.98Eu0.02O2 thin film prepared by pulsed laser deposition at room temperature

Smooth CuLa_0.98Eu_0.02O₂ thin film has successfully been prepared by pulsed laser deposition method at room temperature. Crystal structure of the obtained film was almost same as that of CuLa_0.98Eu_0.02O₂ polycrystalline ceramic. Orange luminescence with high intensity due to ⁵D₀ – ⁷F_0,1 transitions of Eu³⁺, which was an evidence of Eu³⁺ substitution for La³⁺ site in LaO₆ octahedra with the inversion symmetry, was also observed in the obtained film. The optical band gap of CuLa_0.98Eu_0.02O₂ was measured to be 2.85 eV from absorption spectroscopy.     

Optimal growth procedure of GaInP/GaAs heterostructure for high-efficiency solar cells

We have developed an optimal growth procedure for gas-source MBE production of a GaInP/GaAs heterointerface. The interface quality is crucial to obtaining high-performance GaAs solar cells with a GaInP barrier layer because minority carrier lifetime depends strongly on the interface structure. In situ Reflective High-Energy Electron Diffraction (RHEED) observation during the growth across the GaInP/GaAs heterointerface revealed that the phosphorus atoms are replaced by arsenic atoms in the near-interface region of the GaInP layer, and a transient layer acting as a carrier trap is formed. Introduction of a GaP layer into the interface was found to be effective in suppressing carrier loss. From Composition Analysis by Thickness Fringe-Transmission Electron Microscopy (CAT-TEM) images, it was also found that the optimum thickness of inserted GaP to avoid the generation of misfit dislocations is 1 nm.     

1.3-μm continuous-wave lasing operation in GaInNAs quantum-welllasers

A 1.3-μm continuous wave lasing operation is demonstrated, for the first time, in a GaInNAs quantum-well laser at room temperature. This lasing performance is achieved by increasing the nitrogen content (up to 1%) in GaInNAs quantum layer. It is thus confirmed that this type of laser is suitable for use as a light source for optical fiber communications     

12.5-gb/s direct Modulation up to 115/spl deg/C in 1.3-/spl mu/m InGaAlAs-MQW RWG DFB lasers with notch-free grating structure

Direct modulation at 12.5 Gb/s of 1.3-/spl mu/m InGaAlAs distributed feedback (DFB) ridge waveguide (RWG) lasers with low-resistance notch-free gratings running up to 115/spl deg/C is experimentally demonstrated. It was achieved by the combination of the high differential gain of an InGaAlAs MQW active layer, high characteristic temperature of RWG structure, and low-resistance notch-free grating. Moreover, successful transmission of 10-Gb/s modulated signals over 30-km standard single-mode fiber was achieved with the laser running at up to 115/spl deg/C. These results confirm the suitability of this type of laser for use as the cost-effective light source in 12.5-Gb/s and 10-Gb/s datacom applications.     

Changes in textural properties of Japanese tenobe somen noodles during storage

Tenobe somen (TS) noodles are traditional Japanese wheat-based noodles that are produced manually using a sophisticated method called tenobe (literally, "hand stretched"). In the tension test, both the tensile strength and extensibility of TS noodles were greater than those of machine-made (MS) noodles. In the biting test, the chewy texture of TS noodles was realized in the analysis of the force-deformation curves of each type of somen noodles. The creep test indicated a clear difference between the external and internal elasticity of TS noodles. The texture of TS noodles appeared to change dramatically during storage in the rainy season. In addition, firm and chewy textures of TS noodles stored for 20 mo were observed. Similar to the results from our previous study, TS noodles exhibited significantly higher dityrosine content than the flour used for their manufacture. However, the increase in the dityrosine content during the manufacturing process was not observed in the case of MS noodles. Although clear textural differences were observed between TS noodles stored for 0 and 20 mo, the dityrosine contents of TS noodles at each stage were not largely different.     

GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laserdiodes

Vertical-cavity surface-emitting laser diodes with GaInNAs-GaAs quantum-well (QW) active layers are demonstrated for the first time. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. Room-temperature (RT) pulsed operation is achieved, with an active wavelength near 1.18 μm, threshold current density of 3.1 kA/cm², slope efficiency of ~0.04 W/A, and output power above 5 mW for 45-μm-diameter devices. Laser oscillation is observed for temperatures at high as 95°C     

Measurement of the 77Se(γ, n) cross section and uncertainty evaluation of the 79Se(n, γ) cross section

The ⁷⁷Se (γ, n) cross section was measured for the energy range from 7.6 to 13.8 MeV by using quasi-monochromatic laser-Compton scattering γ-rays. The advanced method to deduce γ-ray strength functions from (γ, n) cross section was developed. By utilizing the method, the γ-ray strength functions of ^{77, 78, 80}Se were deduced so as to reproduce the ^{77, 78, 80}Se (γ, n) cross sections measured in this work and previous systematic measurements. The inverse (n, γ) cross sections for ^{76, 77, 79}Se isotopes were calculated using the statistical model calculation code CCONE with the deduced γ-ray strength functions. The uncertainty of the calculated ⁷⁹Se(n, γ)⁸⁰Se cross section was evaluated by comparing the calculations and the experimental data on ^{76, 77}Se (n, γ) cross sections.