Development of co-continuous structure in liquid crystalline polyester

We investigated liquid crystallization of liquid crystalline polyester BB-5 during isothermal annealing by digital high-fidelity microscope and light scattering. A liquid crystalline spherical domain having a radius of micrometers appeared by annealing at around 180 °C. The domain grew dendritically in all directions. Neighboring liquid crystalline regions coalesced and then interconnected. The interconnected structure changed to a co-continuous two-phase structure with increasing ordering of the liquid crystalline phase, and the interface between the liquid crystalline phase and the isotropic phase became smoother over time. Liquid crystallization stopped before volume filling the whole space, and the liquid crystalline phase and isotropic phase coexisted. The liquid crystalline region became narrower with an increase in the temperature of the liquid crystallization. Such structural development is different from the liquid-liquid phase separation via spinodal decomposition, and it may be attributed to the segregation of non-liquid crystallizable low molecular weight molecules from the growth front by fractionation of the molecular weight distribution during the liquid crystallization in terms of the instability of the diffusion-controlled interface.     

A new write/erase method to improve the read disturbcharacteristics based on the decay phenomena of stress leakage currentfor flash memories

This paper describes a new write/erase method for flash memory to improve the read disturb characteristics by means of drastically reducing the stress leakage current in the tunnel oxide. This new write/erase operation method is based on the newly discovered three decay characteristics of the stress leakage current. The features of the proposed write/erase method are as follows: 1) the polarity of the additional pulse after applying write/erase pulse is the same as that of the control gate voltage in the read operation; 2) the voltage of the additional pulse is higher than that of a control gate in a read operation, and lower than that of a control gate in a write operation; and 3) an additional pulse is applied to the control gate just after a completion of the write/erase operation. With the proposed write/erase method, the degradation of the read disturb life time after 10⁶ write/erase cycles can be drastically reduced by 50% in comparison with the conventional bipolarity write/erase method used for NAND type flash memory. Furthermore, the degradation can he drastically reduced by 90% in comparison with the conventional unipolarity write/erase method fur NOR-, AND-, and DINOR-type flash memory. This proposed write/erase operation method has superior potential for applications to 256 Mb flash memories and beyond     

Fracture toughness measurement with fatigue-precracked single edge-notched beam specimens of WC-Co hard metal

The plain-strain fracture toughness of WC-8%Co hard metal, K _IC, was measured using single edge-notched beam (SENB) specimens with fatigue precrack. The fatigue precrack was introduced with compressive fatigue cycling in four-point bending at room temperature. Since stable fatigue-crack propagation was obtained from the notch tip, it was easy to control the fatigue-precrack length. A reasonable K _IC value of 13.3 MPa m^1/2 was obtained with the fatigue-precracked SENB specimens in four-point bending. The compressive fatigue-precracking technique in four-point bending was simple and convenient, and is therefore applicable to precracking in a variety of brittle materials prior to fracture-toughness measurements.     

Modern interpretation on the high-stretching of natural rubber attained by the classic ‘racking’ method

To investigate the mechanism of high elongation of natural rubber attained by the ‘racking method’, a strip of smoked-sheet was elongated up to 150 times in length, by stretching rapidly at room temperature and forcing to shrink at 75-80 °C repeatedly. On X-ray diffraction, a typical fibre pattern with an amorphous ring appeared already at ×10 (stretch ratio=10). The degree of crystallinity increased to the level of 17-18% at ×20 and turned to decrease after ×60, but the degree of crystallite orientation reached at a high level already at ×10 and did not change significantly and the half-height width of reflection profiles stayed almost at a constant level, while the Young's modulus increased up to ca. 300 MPa at ×100 and then fell rather discontinuously. It was assumed that some fractions of chain segments between entanglements were gradually broken in each step of stretching operation, rather than disentangled and slipped.     

NiCoFe/C cathode electrocatalysts for direct ethanol fuel cells

A direct ethanol fuel cell (DEFC), which is less prone to ethanol crossover, is reported. The cell consists of PtRu/C catalyst as the anode, Nafion^® 117 membrane, and Ni–Co–Fe (NCF) composite catalyst as the cathode. The NCF catalyst was synthesized by mixing Ni, Co, and Fe complexes into a polymer matrix (melamine-formaldehyde resins), followed by heating the mixture at 800 °C under inert atmosphere. TEM and EDX experiments suggest that the NCF catalyst has alloy structures of Ni, Co and Fe. The catalytic activity of the NCF catalyst for the oxygen reduction reaction (ORR) was compared with that of commercially available Pt/C (CAP) catalyst at different ethanol concentrations. The decrease in open circuit voltage (V_oc) of the DEFC equipped with the NCF catalysts was less than that of CAP catalyst at higher ethanol concentrations. The NCF catalyst was less prone to ethanol oxidation at cathode even when ethanol crossover occurred through the Nafion^®117 film, which prevents voltage drop at the cathode. However, the CAP catalyst did oxidize ethanol at the cathode and caused a decrease in voltage at higher ethanol concentrations.     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.     

Handling of fine-particles by time-averaged particle driving method in plasmas

We developed a noble technique for the fine-particle handling in plasmas. In this method a pair of point electrodes are introduced in the plasma, to which positive pulses are applied alternatively. When the pulse repetition period is shorter than the particle response time, the particles feel only time-averaged force because of their large mass. Spatial profile of the equivalent potential of the time-averaged force varies from a circle to an ellipse with an increase in the local discharge at the electrodes. The particles are eventually transported toward a middle point between two point-electrodes, being almost independent of their initial positions. This method is quite effective for converging fine particles in the plasma.