Fabrication of 80-nm T-gate high indium In0.7Ga0.3As/In0.6Ga0.4As composite channels mHEMT on GaAs substrate with simple technological process

An 80-nm gate length metamorphic high electron mobility transistor (mHEMT) on a GaAs substrate with high indium composite compound-channels In_0.7Ga_0.3As/In_0.6Ga_0.4As and an optimized grade buffer scheme is presented. High 2-DEG Hall mobility values of 10200 cm²/(V· s) and a sheet density of 3.5 × 10¹² cm^-2 at 300 K have been achieved. The device's T-shaped gate was made by utilizing a simple three layers electron beam resist, instead of employing a passivation layer for the T-share gate, which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate and simplifying the device manufacturing process. The ohmic contact resistance R_c is 0.2 Ω ·mm when using the same metal system with the gate (Pt/Ti/Pt/Au), which reduces the manufacturing cycle of the device. The mHEMT device demonstrates excellent DC and RF characteristics. The peak extrinsic transconductance of 1.1 S/mm and the maximum drain current density of 0.86 A/mm are obtained. The unity current gain cut-off frequency (f_T) and the maximum oscillation frequency (f_max) are 246 and 301 GHz, respectively.     

一种双向同源相参微波光纤稳相传输系

在电子对抗系统、雷达系统、卫星导航和深空探测等多个领域中,微波信号经激光器调制后加载到光信号上经过光纤传输后其相位受外界环境的影响,无法实现稳相传输。首次提出了一种双向同源相参微波光纤稳相传输系统,可实现微波信号在光纤中稳相传输。该系统利用恒温晶振产生相位稳定的多路同参基准信号,一路信号用做光纤传输的相位变化识别信号,经激光器调制成光信号,然后由光分路器分出多路光参考信号与需稳相的信号进行同光纤传输;其它同参信号作为基准信号与经过光纤传输的相位识别信号进行鉴相,其中基准信号与参考信号相参,构建2种信号相参的机理,实现以相位变化为参量的鉴相系统,利用参考信号的相位变化完成对传输的宽带射频微波信号相位变化的识别。在鉴相实现过程中,采用双平衡混频器完成对参考信号相位变化实时鉴相,由单片机对参考信号相位的实时变化进行采样,实时控制可调电动延时线(VODL)进行光传输链路光程差的跟踪补偿,完成对需稳相信号和参考信号的相位主动补偿,实现宽带射频微波信号光纤稳相传输。