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We perform a theoretical study of the effects of the lightly doped drain (LDD) and high-k dielectric on the performances of double gate p-i-n tunneling graphene nanoribbon field effect transistors (TFETs). The models are based on non-equilibrium Green's functions (NEGF) solved self-consistently with 3D-Poisson's equations. For the first time, hetero gate dielectric and single LDD TFETs (SL-HTFETs) are proposed and investigated. Simulation results show SL-HTFETs can effectively decrease leakage current, sub-threshold swing, and increase on-off current ratio compared to conventional TFETs and Si-based devices; the SL-HTFETs from the 3p + 1 family have better switching characteristics than those from the 3p family due to smaller effective masses of the former. In addition, comparison of scaled performances between SL-HTFETs and conventional TFETs show that SL-HTFETs have better scaling properties than the conventional TFETs, and thus could be promising devices for logic and ultra-low power applications. 相似文献
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To overcome short-channel effects(SCEs) in high-performance device applications,a novel structure of CNTFET with a combination of halo and linear doping structure(HL-CNTFET) has been proposed.It has been theoretically investigated by a quantum kinetic model,which is based on two-dimensional non-equilibrium Green’s functions solved self-consistently with Poisson’s equations.We have studied the effect of halo doping and linear doping structure on static and dynamical performances of HL-CNTFET.It is demonstrated that a halo doping structure can decrease the drain leakage current and improve the on/off current ratio,and that linear doping can improve high-frequency and switching performance. 相似文献
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本系统专为FoxBASE/dBASE应用软件开发而设计,主要功能有:①真窗口功能,可在屏幕任意位置打开最多8层窗口,窗口具有独立的坐标及显示控制,窗口关闭后能自动恢复窗口区域原有屏幕信息;②可以创建多种立体图形按钮和立体窗格菜单;③提供消隐清屏、平滑卷屏、移动显示等强大界面构造功能;④支持所有FoxBASE/dBASE应用程序直接利用鼠 相似文献
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