Substrate temperature-controlled precursor reaction mechanism of PEALD-deposited MoOx thin films

Journal of Materials Science - Molybdenum oxide (MoOx) films had been grown by using plasma-enhanced atomic layer deposition (PEALD) with Mo(CO)6 precursor and O2 plasma reactant in a substrate...     

Broad-band MMICs based on modified loss-compensation method using 0.35-/spl mu/m SiGe BiCMOS technology

Using the concept of loss compensation, novel broad-band monolithic microwave integrated circuits (MMICs), including an amplifier and an analog multiplier/mixer, with LC ladder matching networks in a commercial 0.35-mum SiGe BiCMOS technology are demonstrated for the first time. An HBT two-stage cascade single-stage distributed amplifier (2-CSSDA) using the modified loss-compensation technique is presented. It demonstrates a small-signal gain of better than 15 dB from dc to 28 GHz (gain-bandwidth product=157 GHz) with a low power consumption of 48 mW and a miniature chip size of 0.63 mm² including testing pads. The gain-bandwidth product of the modified loss-compensated CSSDA is improved approximately 68% compared with the conventional attenuation-compensation technique. The wide-band amplifier achieves a high gain-bandwidth product with the lowest power consumption and smallest chip size. The broad-band mixer designed using a Gilbert cell with the modified loss-compensation technique achieves a measured power conversion gain of 19 dB with a 3-dB bandwidth from 0.1 to 23 GHz, which is the highest gain-bandwidth product of operation among previously reported MMIC mixers. As an analog multiplier, the measured sensitivity is better than 3000 V/W from 0.1 to 25 GHz, and the measured low-frequency noise floor and corner frequency can be estimated to be 20 nV/sqrt(Hz) and 1.2 kHz, respectively. The mixer performance represents state-of-the-art result of the MMIC broad-band mixers using commercial silicon-based technologies     

Still No Evidence for Perfect Timesharing With Two Ideomotor-Compatible Tasks: A Reply to Greenwald (2003).

For 30 years, A. G. Greenwald and H. G. Shulman's (1973) psychological refractory period (PRP) study has been cited as evidence for perfect timesharing with ideomotor (IM)-compatible tasks. Recently, M.-C. Lien, R. W. Proctor, and P. A. Allen (2002) failed to replicate these results and concluded that IM compatibility is neither necessary nor sufficient to eliminate the PRP effect. A. G. Greenwald (2003) attributed Lien et al.'s nonreplication to the use of (a) a non-IM-compatible task, (b) varied trial spacing, and/or (c) inappropriate instructions. The authors of the present article argue that the first 2 factors are not critical and that instructions merely affect the criterion for speed versus accuracy. In each of Greenwald's experiments, dual-task costs were evident on response time or error rates. Furthermore, the small dual-task costs in his study are consistent with a bottleneck model. Thus, Greenwald (2003) does not provide evidence that IM-compatible tasks enable perfect timesharing. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Effects of free convection and mass transfer on the flow past an impulsively moving infinite vertical circular cylinder

The effects of free convection and mass transfer are taken into account for the Stokes' problem of the flow near an impulsively moving infinite vertical circular cylinder. Expressions of the velocity, temperature, concentration and skin friction of the fluid in closed form are obtained by the Laplace transform technique. The results based on various values of the parameters Gr (Grashof number), Gm (modified Grashof number), Sc (Schmidt number) and Pr (Prandtl number) are given in graphical form. It will be seen that there is a rise in the velocity due to the presence of a foreign mass. But higher Sc yields the lower velocity and skin friction. As the radius of the circular cylinder approaches to infinite, the results presented in this paper agree with those of V.M. Soundalgekar's and C.K. Chen's etc. for the flow past an impulsively moving infinite vertical plate.     

New efficient designs for XOR and XNOR functions on the transistorlevel

Two new methods are proposed to implement the exclusive-OR and exclusive-NOR functions on the transistor level. The first method uses non-complementary signal inputs and the least number of transistors. The other one improves the performance of the prior method but two more transistors are utilized. Both of them have been fully simulated by HSPICE on a SUN SPARC 2 workstation     

Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing

A theoretical and experimental study of a particular transverse-electric (TE) mode lasing mechanism of a tunneling injection InP quantum-dot (QD) laser is reported. In the experiment, the TE mode lasing action takes place at the first excited state of InP biaxially compressively strained QDs. This QD state is coupled to the ground state of two tensile-strained InGaP quantum wells (QWs) although the tensile-strained QW structure favors the transverse-magnetic (TM) polarization light emission. The measured TE and TM modal gain spectra show a typical QW gain evolution behavior at low injection currents, which can be theoretically modeled by the quasi-equilibrium of carrier distribution. When the injection current is increased near threshold, a TE gain narrowing and a simultaneous TM gain pinning are observed in the measured modal gain spectra, which cannot be explained via the quasi-equilibrium model. We propose a polarization-dependent photon-mediated carrier redistribution in the QD-coupled-QW structure to explain this TE and TM gain evolution behavior. When the injection current is just below threshold, the strong carrier depletion via stimulated emission due to coupling between the InP QD and InGaP QW states plays an important role in carrier redistribution, which depends on the optical transition energy and polarization. This concept of the polarization-dependent photon-mediated carrier redistribution explains the TE gain narrowing and TM gain pinning behavior. In addition, a coupled rate equation model is established, and the calculated polarization power ratio based on the coupled rate equations explains the experimental observation.     

Comparative study of self-assembling of multilayers using reactive sputter deposition and mass selective ion beam deposition

While experimenting with the growth of metal-containing amorphous carbon (a-c:Me) thin films using two different growth processes, self-assembled multilayered structures were observed. One of the processes is a reactive magnetron sputter deposition process. The other process is a mass selective ion beam deposition process. Despite of the differences in the growth method and the growth condition, self-assembled multilayered thin films, consisting of alternating dark layer and bright layer, were obtained in both processes. Based on the consideration of energy for atomic diffusion in the thin films, the growth mechanism is discussed.     

高速公路礫石隧道設計之探討

礫石隧道之設計施工與岩石隧道有著明顯的不同,如在岩體分類方面無法使用岩石隧道常用的南非CSIR-RMR及挪威Barton-Q值之定量評估方法.另其工址調查也常因粒徑及採樣不易,無法進行室内試驗而影響力學參數的評估.近年來雖有部分礫石隧道個案完成,然而礫石隧道所估比例仍屬稀少,因此礫石隧道之施工經驗仍較缺乏,對於高速公路等級而言更是首例.由於礫石隧道地質之特殊,致隧道設計之前應對台灣礫石地層之成因及類型等有基本認識,充分瞭解礫石層之地質特性與力學性質,才能進一步探討礫石隧道之相關課題.首先針對上述因素加以探討,然後以一礫石隧道設計實例來說明設計之實際考量及過程,最後進行隧道之支撐設計及數值模擬比較,俾供後續類似地層設計之參考.