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1.
Multimedia Tools and Applications - Remote Sensing categorical signature classification has gained significant implications on spatial resolution image analysis due to differences in the... 相似文献
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Goel S. Elgamel M.A. Bayoumi M.A. Hanafy Y. 《IEEE transactions on circuits and systems. I, Regular papers》2006,53(4):867-878
Scaling down to deep submicrometer (DSM) technology has made noise a metric of equal importance as compared to power, speed, and area. Smaller feature size, lower supply voltage, and higher frequency are some of the characteristics for DSM circuits that make them more vulnerable to noise. New designs and circuit techniques are required in order to achieve robustness in presence of noise. Novel methodologies for designing energy-efficient noise-tolerant exclusive-OR-exclusive- NOR circuits that can operate at low-supply voltages with good signal integrity and driving capability are proposed. The circuits designed, after applying the proposed methodologies, are characterized and compared with previously published circuits for reliability, speed and energy efficiency. To test the driving capability of the proposed circuits, they are embedded in an existing 5-2 compressor design. The average noise threshold energy (ANTE) is used for quantifying the noise immunity of the proposed circuits. Simulation results show that, compared with the best available circuit in literature, the proposed circuits exhibit better noise-immunity, lower power-delay product (PDP) and good driving capability. All of the proposed circuits prove to be faster and successfully work at all ranges of supply voltage starting from 3.3 V down to 0.6 V. The savings in the PDP range from 94% to 21% for the given supply voltage range respectively and the average improvement in the ANTE is 2.67X. 相似文献
3.
Building useful systems with an ability to understand "real" natural language input has long been an elusive goal for Artificial Intelligence. Well-known problems such as ambiguity, indirectness, and incompleteness of natural language inputs have thwarted efforts to build natural language interfaces to intelligent systems. In this article, we report on our work on a model of understanding natural language design specifications of physical devices such as simple electrical circuits. Our system, called KA, solves the classical problems of ambiguity, incompleteness and indirectness by exploiting the knowledge and problem-solving processes in the situation of designing simple physical devices. In addition, KA acquires its knowledge structures (apart from a basic ontology of devices) from the results of its problem-solving processes. Thus, KA can be bootstrapped to understand design specifications and user feedback about new devices using the knowledge structures it acquired from similar devices designed previously.In this paper, we report on three investigations in the KA project. Our first investigation demonstrates that KA can resolve ambiguities in design specifications as well as infer unarticulated requirements using the ontology, the knowledge structures, and the problem-solving processes provided by its design situation. The second investigation shows that KA's problem-solving capabilities help ascertain the relevance of indirect design specifications, and identify unspecified relations between detailed requirements. The third investigation demonstrates the extensibility of KA's theory of natural language understanding by showing that KA can interpret user feedback as well as design requirements. Our results demonstrate that situating language understanding in problem solving, such as device design in KA, provides effective solutions to unresolved problems in natural language processing. 相似文献
4.
New sulphides of transition metal ions [M+n = Cu+1, Cu+2 and Zn+2] have been synthesised in sunlight. XRD patterns show that these compounds are not MxSy but are mercaptyl, hydroxyl metal sulphides [M(SH)(OH)(H2O)2] which is further ascertained by I.R. spectra showing bands due to T
d-symmetry. ESCA of compound of copper in solid state shows presence of Cu1+ and Cu2+ ion. The presence of hydroxyl, mercaptyl, aqua and S–2 groups has finally been confirmed with TGA, DTA and ESCA. Conductivity and Seebeck coefficient measurements show that compound of copper is p-type semiconductor and compound of zinc is n-type semiconductor. The production of these low cost materials opens an interesting area of research and development for their use in solar cell devices. 相似文献
5.
Becker-Gomez A. Lakshmi Viswanathan T. Viswanathan T.R. 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2008,55(7):609-613
6.
Quirk Stuart W.; Subramanian Lakshmi; Hoerger Michael 《Canadian Metallurgical Quarterly》2007,116(3):624
The socioemotional functioning of schizophrenic and schizotypic individuals is marked by withdrawal, poor organization, and limited emotional displays. Such behavioral tendencies and lack of social enjoyment in schizotypy could be linked to the relative situational demands or role ambiguity inherent in specific social activities. To determine whether high-schizotypy individuals prefer more clearly role-defined social activities (e.g., visiting relatives) to more ambiguous, novel situations (e.g., going alone to a party), the authors gathered reports from 52 high-schizotypy and 60 low-schizotypy individuals on their enjoyment and frequency of engaging in social situations varying in relative situational demand. Parallel reports were obtained from knowledgeable others. Group × Situational Demand interactions revealed the hypothesized pattern of reduced frequency and enjoyment ratings for ambiguous or novel situations by the high-schizotypy participants in both self and others' reports. Groups were more comparable in their reported frequency and enjoyment of less ambiguous situations. Results suggest the importance of situational demands in the socioemotional experience and behavioral withdrawal in schizotypy. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
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Md. A. Mohiddon R. Kumar P. Goel K. L.Yadav 《Dielectrics and Electrical Insulation, IEEE Transactions on》2007,14(1):204-211
The aim of this study is to determine the effect of Nb5+ doping on PZT (65/35) based bulk materials in their structure, micro structure and electrical properties. The Nb content was chosen 0-9 mole%. These materials were prepared by conventional mixed oxide method. X ray diffraction studies suggest the compound to be of rhombohedral perovskite phase. Excess addition of Nb result in pyrochlore and fluorite phase develops in PZT (65/35) sample. Detailed studies of dielectric constant as a function of temperature (40degC to 500degC) and frequency (100 Hz to 1 MHz) suggest that the compounds undergo diffuse type of phase transition. Maximum dielectric constant and resistivity were found to be strongly dependent on doping and measuring frequencies. Using complex impedance analysis micro structural parameters such as bulk and grain boundary resistance, bulk charge carrier concentration and relaxation time were determined 相似文献