Fuzzy Weirstrass theorem and convex fuzzy mappings

The convexity and continuity of fuzzy mappings are defined through a linear ordering and a metric on the set of fuzzy numbers. The local-global minimum property of real-valued convex functions is extended to convex fuzzy mappings. It is proved that a strict local minimizer of a quasiconvex fuzzy mapping is also a strict global minimizer. Characterizations for convex fuzzy mappings and quasiconvex fuzzy mappings are given. In addition, the Weirstrass theorem is extended from real-valued functions to fuzzy mappings.     

Mathematical analysis and experimental results of applying enhanced-surface-area packed-bed electrodes in electrogenerative sulfur dioxide oxidation

The results of applying enhanced-surface-area packed-bed (ESAP) electrodes in electrogenerative SO₂/O₂ cells are reported to illustrate their utility and potential applications. Mathematical analysis with parameters pertinent to the experimental conditions shows that all electrocatalyst sites in these electrodes are expected to be uniformly utilized for electrochemical SO₂ oxidation. Experimental results showed that ESAP electrodes (1 mg Pt/cm²) could provide at least 5 times higher SO₂ conversion at given cell voltages than graphite sheet electrodes (1.5 mg Pt/cm²).     

Stressful life events and smoking behaviors in Chinese adolescents: a longitudinal analysis.

The associations between stressful life events and smoking have been established among adolescents in the United States. However, whether these relationships are similar in adolescents from other non-Western cultures is unknown. Understanding these relationships in adolescents may help to provide opportunities to reduce the smoking rates in those cultures by providing positive coping methods that do not include smoking. In this longitudinal study, the associations between nine stressful life events scales and smoking behaviors were examined in a sample of Chinese adolescents. Six of these scales, positive school-related, negative school-related, positive family-related, positive peer-related, negative peer-related, and negative health-related had significantly different means among females and males. Among males, positive school-related stress was a protective factor for smoking susceptibility. Among females, positive school-related stress was a protective factor and negative school-related stress was a risk factor for lifetime smoking, and negative family-related stress was a risk factor for smoking susceptibility. Findings indicate that smoking among male adolescents in China may not be the result of stress; however, in females stress may contribute to the decision to smoke. Future directions are discussed.     

Improved GaAs-based quantum cascade laser (/spl lambda//spl sim/11 /spl mu/m) using high-reflectivity metal facet coating

By applying a high-reflectivity metal coating to the rear facet of a GaAs-based quantum cascade laser operating at /spl lambda//spl sim/11.5 /spl mu/m, the threshold current has been reduced by 11% at 260 K and pulsed operation of the epilayer-up mounted device was extended from 283 to 294 K.     

NONDESTRUCTIVE EXAMINATION OF EPOXY ADHESIVE-BONDED STRUCTURES EXPOSED TO A HUMID ENVIRONMENT: A COMPARISONOF LOW- AND HIGH-FREQUENCY DIELECTRIC MEASUREMENTS

Broadband dielectric measurements (10 -2 to 3 GHz) are reported on the effects of exposure of thick film adhesive-bonded structures to moisture. Measurement of the dielectric properties over a broad frequency range allows identification of water both in voids and as a molecular dispersion in the matrix. Changes in the low frequency region of the dielectric spectrum can be attributed to a combination of processes associated with plasticisation of the adhesive, interfacial polarisation effects, and hydration of the surface oxide layer. The data obtained are complemented by mechanical testing and failure analysis of the bond structure measured as a function of the time of exposure. This study indicates that for thick film adhesives the ageing characteristics are apparently independent of the surface treatment. In one of the joints studied an additional feature is identified which appears to correlate with the premature aging of the joint structure.     

50-nm Self-Aligned and “Standard” T-gate InP pHEMT Comparison: The Influence of Parasitics on Performance at the 50-nm Node

Continued research into the development of III-V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date. In addition, more recent research has begun to focus on reducing the parasitic device elements such as access resistance and gate fringing capacitance, which become crucial for short gate length device performance maximization. Adopting a self-aligned T-gate architecture is one method used to reduce parasitic device access resistance, but at the cost of increasing parasitic gate fringing capacitances. As the device gate length is then reduced, the benefits of the self-aligned gate process come into question, as at these ultrashort-gate dimensions, the magnitude of the static fringing capacitances will have a greater impact on performance. To better understand the influence of these issues on the dc and RF performance of short gate length InP pHEMTs, the authors present a comparison between In_0.7Ga_0.3As channel 50-nm self-aligned and "standard" T-gate devices. Figures of merit for these devices include transconductance greater than 1.9 S/mm, drive current in the range 1.4 A/mm, and fT up to 490 GHz. Simulation of the parasitic capacitances associated with the self-aligned gate structure then leads a discussion concerning the realistic benefits of incorporating the self-aligned gate process into a sub-50-nm HEMT system