Synthesis,characterization and charge transport properties of Pr–Ni Co-doped SrFe2O4 spinel for high frequency devices applications

Ferrites are materials of interest due to their broad applications in high technological devices and a lot of research has been focused to synthesize new ferrites. In this regard, an effort has been devoted to synthesize spinel Pr–Ni co-substituted strontium ferrites with a nominal formula of Sr_1-xPr_xFe_2-yNi_yO₄ (0.0 ≤ x ≤ 0.1, 0.0 ≤ y ≤ 1.0). The cubic structure of pure and Pr–Ni co-substituted strontium ferrite samples calcinated at 1073 K for 3 h has been confirmed through X-ray diffraction (XRD). Average sizes of crystallites (18–25 nm) have been estimated from XRD analysis and nanometer particle sizes of synthesized ferrites have been further verified by scanning electron microscopy (SEM). SEM results have also shown that particles are mostly agglomerated and all the samples possess porosity. It has been observed that at 298 K, the values of resistivity (ρ) increase, while that of AC conductivity, dielectric loss, and dielectric constants decrease with increasing amounts of Pr³⁺ and Ni²⁺ ions. The values of dielectric parameters initially decrease with frequency and later become constant and can be explained on the basis of dielectric polarization. Electrochemical impedance spectroscopy (EIS) studies show that the charge transport phenomenon in ferrite materials is mainly controlled via grain boundaries. Overall, synthesized ferrite materials own enhanced resistivity values in the range of 1.38 × 10⁹–1.94 × 10⁹ Ω cm and minimum dielectric losses, which makes them suitable candidates for high frequency devices applications.     

Improvement of dielectric breakdown strength and energy storage performance in Er2O3–modified 0.95Sr0.7Ba0.3Nb2O6-0.05CaTiO3 lead-free ceramics

In this study, 0.95?Sr_0.7Ba_0.3Nb₂O₆-0.05CaTiO₃-x wt% Er₂O₃ ceramics (SBNCTEx; x?=?0–5) were synthesized using traditional solid-state method, and we investigated the microstructure, energy storage properties as well as the relationship between dielectric breakdown strength and interfacial polarization. As compared with pure 0.95?Sr_0.7Ba_0.3Nb₂O₆-0.05CaTiO₃ ceramics, the Er₂O₃ dopants suppressed the grain growth of SBNCTEx, and the doped ones showed the dense microstructure. The secondary phase was found for x?≥?1 according to the EDS results, and the influence of the secondary phase on relative dielectric breakdown strength has also been studied. The dielectric breakdown strength increased from 18.1?kV/mm to 34.4?kV/mm, which is good for energy storage. The energy storage density of 0.28?J/cm³ and the energy storage efficiency of 91.4% were obtained in the SBNCTE5 ceramics. The results indicate that SBNCTE ceramics can be used as energy storage capacitors.     

基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Three-phase four-wire shunt active power filter based on the SOGI filter and Lyapunov function for DC bus control

The three-phase four-wire shunt active power filter (SAPF) was developed to suppress the harmonic currents generated by nonlinear loads, and for the compensation of unbalanced nonlinear load currents, reactive power, and the harmonic neutral current. In this work, we consider instantaneous reactive power theory (PQ theory) for reference current identification based on the following two algorithms: the classic low-pass filter (LPF) and the second-order generalized integrator (SOGI) filter. Furthermore, since an important process in SAPF control is the regulation of the DC bus voltage at the capacitor, a new controller based on the Lyapunov function is also proposed. A complete simulation of the resultant active filtering system confirms its validity, which uses the SOGI filter to extract the reference currents from the distorted line currents, compared with the traditional PQ theory based on LPF. In addition, the simulation performed also demonstrates the superiority of the proposed approach, for DC bus voltage control based on the Lyapunov function, compared with the traditional proportional-integral (PI) controller. Both novel approaches contribute towards an improvement in the overall performance of the system, which consists of a small rise and settling time, a very low or nonexistent overshoot, and the minimization of the total harmonic distortion (THD).     

Hierarchical micro-nanostructured albite-based glass-ceramic for high dielectric strength insulators

A novel glass-ceramic material based on albite type Na-rich feldspar has been synthesized by conventional ceramic process. High crystallinity, >94%?Vol.% is obtained by fast sintering which allows energy saving processing. Albite is the main crystalline phase and tetragonal SiO₂ is a secondary phase. Electrical properties were examined by complex impedance, DC measurements, and dielectric breakdown test. Dielectric characterization shows a non-Debye type dielectric behavior with low dielectric constant, 4.6 at 1?MHz, low dielectric losses, (～10^?3 at 1?MHz, and a large dielectric strength, ～60?kV/mm), that it is the largest value reported in ceramic insulators. Those dielectric properties are attained by the low glassy phase content in the samples and their unique micro-nanostructure. All these properties make this novel material a very promising candidate in the market of ceramic electrical insulator, highlighting for high-voltage applications.     

Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.     

浅谈DC/DC变换器控制新方法

文中针对DC/DC变换器的特点,在现有控制和建模方法的基础之上,对DC/DC变换器的现代控制方法进行了归纳和总结,简要讨论了其控制原理,并比较了各种现代控制方法的优缺点,最后对DC/DC变换器控制方法的发展作了一定的展望。     

智能化中高压变频器实载试验平台的实现

中、高压变频器产量越来越多，但试验手段大多比较落后，一般采用带电机空转的方法。本文介绍了一个高压变频器试验平台，通过该平台可以对电压等级在3kV～10kV、功率在5000kW以下的变频器进行实载试验。