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1.
For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (Ron,sp) of 2 mΩ cm2, which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively. 相似文献
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Fei Xu Xiangli Shi Qingzhu Zhang Wenxing Wang 《International journal of molecular sciences》2015,16(8):18714-18731
The chlorothiophenoxy radicals (CTPRs) are key intermediate species in the formation of polychlorinated dibenzothiophenes/thianthrenes (PCDT/TAs). In this work, the formation of CTPRs from the complete series reactions of 19 chlorothiophenol (CTP) congeners with H and OH radicals were investigated theoretically by using the density functional theory (DFT) method. The profiles of the potential energy surface were constructed at the MPWB1K/6-311+G(3df,2p)//MPWB1K/6-31+G(d,p) level. The rate constants were evaluated by the canonical variational transition-state (CVT) theory with the small curvature tunneling (SCT) contribution at 600–1200 K. The present study indicates that the structural parameters, thermal data, and rate constants as well as the formation potential of CTPRs from CTPs are strongly dominated by the chlorine substitution at the ortho-position of CTPs. Comparison with the study of formation of chlorophenoxy radicals (CPRs) from chlorophenols (CPs) clearly shows that the thiophenoxyl-hydrogen abstraction from CTPs by H is more efficient than the phenoxyl-hydrogen abstraction from CPs by H, whereas the thiophenoxyl-hydrogen abstraction from CTPs by OH is less impactful than the phenoxyl-hydrogen abstraction from CPs by OH. Reactions of CTPs with H can occur more readily than that of CTPs with OH, which is opposite to the reactivity comparison of CPs with H and OH. 相似文献
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《Ceramics International》2020,46(3):2868-2876
In order to improve the stability of PZT-based sensors, the mechanical, dielectric, ferroelectric and piezoelectric properties of PZT-5H under impact load were studied experimentally by using the separated Hopkinson pressure bar (SHPB) with an electrical output measurement device. At the same time, the experimental study on the material properties of PZT-5H before and after the impact was carried out. The effect of impact cracks on the output voltage of PZT-5H was also analyzed. The results show that the dynamic piezoelectric constants of PZT-5H under low stress impact (10–50 MPa) are different from those under quasi-static state, and the empirical relationship between them and the peak stress is obtained through experiments. The dielectric properties of PZT-5H did not change under low stress impact, but micro-cracks occurred in the material and dielectric loss increased at high frequencies. Under short circuit, the residual polarization intensity of PZT-5H decreases sharply due to impact load. While the impact load causes the secondary polarization and the increase of the residual polarization intensity of PZT under open circuit. When the stress is over 45 MPa, the PZT-5H breaks. The formation of cracks causes abnormal discharge voltage and gap discharge. 相似文献
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对三网互联的几个关键技术进行分析与研究,介绍利用IP技术解决有线电视网地址选择问题,探讨怎样将ATM技术与IP技术相互融合,使真正的信息高速公路成为现实,阐述利用H.323标准全面解决视频网络方案。 相似文献
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通过对耐热耐蚀合金Incoloy 80 0H的性能分析 ,指出它与普通奥氏体不锈钢相比具有较优的抗氧化性能、耐蚀性和高温蠕变强度。针对催化裂化装置同轴式沉降再生器内部所用Incoloy 80 0H焊件易出现裂纹的问题进行分析 ,认为在施焊过程中由于合金凝固时有低熔点金属或化合物的液态膜残留在晶界区 ,该合金具有高的焊接热裂纹敏感性 ,若焊材选择不当 ,焊丝填充不充分、缺少保护气等将导致晶间裂纹产生。提出了该合金采用TIG焊接防止热裂纹产生的措施。 相似文献