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排序方式: 共有711条查询结果,搜索用时 15 毫秒
1.
回顾了异质结光晶体管(HPT)在近年来的重要进展,综合分析了HPT的工作原理以及影响其性能的主要参数。综述了不同材料制作的HPT的研究现状,得出了目前限制HPT发展的主要因素及当前应重点解决由于基区表面复合等效应导致的增益下降和由于结电容的充放电限制的响应带宽等问题的结论。 相似文献
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J. M. Ballingall P. Ho J. Mazurowski L. Lester K. C. Hwang J. Sutliff S. Gupta J. Whitaker 《Journal of Electronic Materials》1993,22(12):1471-1475
InxGa1−xAs (x=0.25–0.35) grown at low temperature on GaAs by molecular beam epitaxy is characterized by Hall effect, transmission
electron microscopy, and ultrafast optical testing. As with low temperature (LT) GaAs, the resistivity is generally higher
after a brief anneal at 600°C. High-resolution transmission electron microscopy shows all the as-grown epilayers to be heavily
dislocated due to the large lattice mismatch (2–3%). When the layers are annealed, in addition to the dislocations, precipitates
are also generally observed. As with LT-GaAs, the lifetime shortens as growth temperature is reduced through the range 300–120°C;
also, the lifetime in LT-InxGa1−xAs is generally shorter in as-grown samples relative to annealed samples. Metal-semiconductor-metal photodetectors fabricated
on the material exhibit response times of 1–2 picoseconds, comparable to results reported on GaAs grown at low temperature,
and the fastest ever reported in the wavelength range of 1.0–1.3 μm. 相似文献
4.
量子阱红外探测器能带结构的计算 总被引:1,自引:1,他引:0
利用电子波在阱与垒的界面上的反射及干涉效应,计算了量子阱红外探测器(QWIP)的能带结构,并对其适用性进行了分析和讨论。通过与K-P模型比较发现,本方法对计算较宽势阱(阱宽大于4nm)的量子阱结构的电子态适合。在垒宽和阱宽不变条件下,用两种方法计算得到的AlGaAs/GaAs量子阱材料中Al组分x与吸收峰值波长λp的关系曲线基本相同。结果说明,在较宽的范围内,本方法对QWIP能带结构的计算是适用且简便的。 相似文献
5.
报道了一种采用UHV/CVD锗硅工艺和CMOS工艺流程在SOI衬底上制作的横向叉指状Si0.7Ge0.3/Si p-i-n光电探测器.测试结果表明:其工作波长范围为0.7~1.1μm,在峰值响应波长为0.93μm,响应度为0.38A/W.在3.0V的偏压下,其暗电流小于1nA,寄生电容小于1.0pF,上升时间为2.5ns.其良好的光电特性以及与CMOS工艺的兼容性,为研制能有效工作于近红外光的高速、低工作电压硅基光电集成器件提供了一种新的尝试,在高速光信号探测等应用中有一定的价值. 相似文献
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GAOHui LIYan YANGLi-ping DENGHong 《半导体光子学与技术》2005,11(2):85-88,106
Hexagonal microtube ZnO was firstly grown on single crystal p-Si (111) substrates by hydrothermal method, and fabricated Ag/n-ZnO and Au/n-ZnO Schottky junction. Schottky effective barrier heights were calculated by I-V measurement. It is confirmed that the presence of a large amount of surface states related possibly to lattice imperfections existed near the surface leads to the pinning of the surface Fermi level at 0.35 eV below the conduction-band edge. Then the fabricated Schottky barrier junctions are evaluated for their use as UV photodetectors. 相似文献
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Near‐Infrared Photodetectors Based on MoTe2/Graphene Heterostructure with High Responsivity and Flexibility 下载免费PDF全文
Wenzhi Yu Shaojuan Li Yupeng Zhang Weiliang Ma Tian Sun Jian Yuan Kai Fu Qiaoliang Bao 《Small (Weinheim an der Bergstrasse, Germany)》2017,13(24)
2D transition metal dichalcogenides (TMDCs) have attracted considerable attention due to their impressively high performance in optoelectronic devices. However, efficient infrared (IR) photodetection has been significantly hampered because the absorption wavelength range of most TMDCs lies in the visible spectrum. In this regard, semiconducting 2D MoTe2 can be an alternative choice owing to its smaller band gap ≈1 eV from bulk to monolayer and high carrier mobility. Here, a MoTe2/graphene heterostructure photodetector is demonstrated for efficient near‐infrared (NIR) light detection. The devices achieve a high responsivity of ≈970.82 A W?1 (at 1064 nm) and broadband photodetection (visible‐1064 nm). Because of the effective photogating effect induced by electrons trapped in the localized states of MoTe2, the devices demonstrate an extremely high photoconductive gain of 4.69 × 108 and detectivity of 1.55 × 1011 cm Hz1/2 W?1. Moreover, flexible devices based on the MoTe2/graphene heterostructure on flexible substrate also retains a good photodetection ability after thousands of times bending test (1.2% tensile strain), with a high responsivity of ≈60 A W?1 at 1064 nm at V DS = 1 V, which provides a promising platform for highly efficient, flexible, and low cost broadband NIR photodetectors. 相似文献
10.
Gonglan Ye Yongji Gong Sidong Lei Yongmin He Bo Li Xiang Zhang Zehua Jin Liangliang Dong Jun Lou Robert Vajtai Wu Zhou Pulickel M. Ajayan 《Nano Research》2017,10(7):2386-2394
Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics.Monolayer SnS2,with a band gap of ~2.6 eV,has an octahedral lattice made of two atomic layers of sulfur and one atomic layer of tin.Till date,there have been limited reports on the growth of large-scale and high quality SnS2 atomic layers and the investigation of their properties as a semiconductor.Here,we report the chemical vapor deposition (CVD) growth of atomic-layer SnS2 with a large crystal size and uniformity.In addition,the number of layers can be changed from a monolayer to few layers and to bulk by changing the growth time.Scanning transmission electron microscopy was used to analyze the atomic structure and demonstrate the 2H stacking poly-type of different layers.The resultant SnS2 crystals is used as a photodetector with external quantum efficiency as high as 150%,suggesting promise for optoelectronic applications. 相似文献