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1.
We use photoluminescence to observe light-induced degradation in silicon in real time. Numerical simulations are used to match our results and lifetime decay data from the literature with theoretical models for the generation of the light-induced boron–oxygen defects. It is found that the existing model of the slowly generated defect SRC, where its saturated concentration is a function of the majority carrier concentration, does not explain certain results in both p- and n-type samples. A new model is proposed in which the saturated SRC concentration is controlled by the total hole concentration under illumination. 相似文献
2.
《Ceramics International》2020,46(8):12138-12144
A new mechanoluminescent phosphor was developed from a sodium (Na) superionic conductor (NASICON)-structured Na3Sc2(PO4)3:Eu2+ phosphor that is known for its self-healing properties. The compound that crystalized assuming monoclinic C2/c symmetry was found to be blue-emitting, with no noticeable persistent luminescence. Thermoluminescence analysis showed that the phosphor had two prominent distinct thermal emission bands corresponding to the high-temperature β- and γ-phases of the composition. The mechanoluminescence properties of the material that does not have any persistent luminescence at room temperature were investigated by imparting impulsive strain. The compound on charging with 365 nm radiation was found to have significant mechanoluminescent emission originating from shallow defects present in the β-phase of composition that formed by the stress-induced phase transition process. Its emission characteristics and temporal behavior were investigated by varying the impact velocity. 相似文献
3.
高质量ZnO薄膜的退火性质研究 总被引:3,自引:0,他引:3
在LP-MOCVD中,我们利用Zn(C2H5)2作Zn源,CO2作氧源,在(0002)蓝宝石衬底上成功制备出皮c轴取向高度一致的ZnO薄膜,并对其进行500℃-800℃四个不同温度的退火。利用XRD、吸收谱、光致发光谱和AFM等手段研究了退火对ZnO晶体质量和光学性质的影响。退火后,(0002)ZnO的XRD衍射峰强度显著增强,c轴晶格常数变小,同时(0002)ZnOX射红衍射峰半高宽不断减小表明晶粒逐渐增大,这与AFM观察结果较一致。由透射谱拟合得到的光学带隙退火后变小,PL谱的带边发射则加强,并出现红移,蓝带发光被有效抑制,表明ZnO薄膜的质量得到提高。 相似文献
4.
Photoluminescence features in a commercial grade cured DGEBA-based epoxy resin have been investigated with as objective to determine which of the material compounds are responsible for cured resin emissions. The origin of the bands has been approached by considering photoluminescence of base resin and hardener taken separately, of their mixture, and in the course of curing. Most of the bands observed in the cured resin could be interpreted based on those found in the components taken separately. Fluorescence of the cured resin appears dominated by two broad bands that are characteristic of the hardener and exhibits a blue shift by up to 30 nm in the course of curing which could be used for cure monitoring purpose of the investigated system. Fluorescence of the base resin is clearly detected in the resin cured with tertiary amine as catalyser. However, it is very weak if the catalyser is not added. Two phosphorescence processes have been isolated in the cured resin, one of them being related to the base resin. Finally, a chemiluminescence spectrum has been recorded in the course of curing, which has been related to either curing-related reactions or to an oxidation process. 相似文献
5.
6.
LILin LIUWen-li LUBin JUGuo-xian ZHANGYong-ming HAOYong-qin SUWei ZHONGJing-chang 《半导体光子学与技术》2004,10(3):179-181,193
Spectral and structural characteristics of distributed Bragg reflector (DBR) in vertical-cavity surface-emitting lasers were studied with photoluminescence and double- crystal X- ray diffraction measurement. The expected high quality epitaxial DBR structure was verified. In the X- ray double- crystal rocking curves of DBR the zeroth- order peak, the first and second order satellite peaks were measured. Splitting of diffraction peak appeared in the rocking curves was analyzed. The effects of introduced deep energy levels on the structural perfection and optical properties were discussed. 相似文献
7.
The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the
n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed
and its concentration was affected by the Sb4/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb
grown at 550°C under a Sb4/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized
surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized
impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity
was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb
layers were studied by comparing their photoluminescence spectra at 4.5K. 相似文献
8.
9.
Yi Kai Zhou Sung Woo Choi Shigeya Kimura Shuichi Emura Shigehiko Hasegawa Hajime Asahi 《Journal of Superconductivity and Novel Magnetism》2007,20(6):429-432
GaGdN layers were grown at temperatures below 300°C by radio-frequency plasma-assisted molecular beam epitaxy on sapphire
substrates. GaGdN samples with high Gd concentration as high as 12.5% were obtained by lowering the growth temperature. X-ray
diffraction results showed no obvious secondary phase, which means that the phase separation can be suppressed by the growth
at low temperatures. All samples, including those grown at room temperature, showed ferromagnetic characteristics. Photoluminescence
emission was observed, though spectra exhibit broad and sharp luminescence bands related to many kinds of defects. It is suggested
that electrons coming from defects, especially, nitrogen vacancy, stabilize ferromagnetism, and that the carrier-induced ferromagnetism
occurs in the low-temperature-growth GaGdN. 相似文献
10.
New and simple modification of vapor-liquid-solid process for Si nanowires growth based on microwave plasma enhanced chemical vapor deposition that uses solid-state Si target as a source of Si atoms was developed. The method was temperature and pressure controlled evaporation of solid phase of Si source in hydrogen microwave plasma. Aligned growth of Si nanowires was performed in local electric field by applying of constant negative bias to substrate holder. Deposited Si nanowires were studied by scanning electron microscopy (SEM), Raman and photoluminescence spectroscopy. Correlation between photoluminescence spectra and Si nanowires properties were studied. 相似文献