Local thermal property analysis by scanning thermal microscopy of an ultrafine-grained copper surface layer produced by surface mechanical attrition treatment

Scanning thermal microscopy (SThM) was used to map thermal conductivity images in an ultrafine-grained copper surface layer produced by surface mechanical attrition treatment (SMAT). It is found that the deformed surface layer shows different thermal conductivities that strongly depend on the grain size of the microstructure: the thermal conductivity of the nanostructured surface layer decreases obviously when compared with that of the coarse-grained matrix of the sample. The role of the grain boundaries in thermal conduction is analyzed in correlation with the heat conduction mechanism in pure metal. A theoretical approach, based on this investigation, was used to calculate the heat flow from the probe tip to the sample and then estimate the thermal conductivities at different scanning positions. Experimental results and theoretical calculation demonstrate that SThM can be used as a tool for the thermal property and microstructural analysis of ultrafine-grained microstructures.     

(YCa)F3助烧AIN陶瓷的显微结构和热导率

采用（ＣａＹ）Ｆ３为助烧结剂,低温烧结（１６５０℃,６ｈ）制备出热导率为２０８Ｗ／ｍＫ的ＡＩＮ陶瓷,在烧结过程中,热导率随保温时间的变化服从方程,λ（ｔ）＝λ∞－△λ（．３＾－６／ｒ,用ＳＥＭ、ＳＴｈＭ、ＴＥＭ和ＨＲＥＭ对ＡＩＮ陶瓷的显微结构及其对热导率的影响进行了研究。结果表明,晶粒尺２对ＡＩＮ陶瓷热导率的影响可以忽略,而分隔在ＡＮＩ晶粒之间的昌界相会降低热导率。     

高空间分辨率的热测试技术——扫描热显微技术

简述了用扫描热显微技术进行高空间分辨率热测量 试的技术特点和研究现状,介绍了实际测试的情况,初步分析了扫描热地和样品表面间的传热机理,提出了进一步研究的方向。     

(YCa)F3助烧AlN陶瓷的显微结构和热导率

采用（ＣａＹ）Ｆ_３为助烧结剂，低温烧结（１６５０℃， ６ｈ）制备出热导率为２０８Ｗ／ｍ·Ｋ的ＡＩＮ陶瓷，在烧结过程中，热导率随保温时间的变化服从方程：λ（ｔ）＝λ∞－△λ（０）·ｅ~（－ｔ／ｒ）·用ＳＥＭ、 ＳＴｈＭ、 ＴＥＭ和 ＨＲＥＭ对 ＡＩＮ陶瓷的显微结构及其对热导率的影响进行了研究，结果表明，晶粒尺寸对ＡＩＮ陶瓷热导率的影响可以忽略，而分隔在ＡＩＮ晶粒之间的晶界相会降低热导率。     

高导热电封装复合材料界面热传导的扫描热显微镜分析

本文利用扫描热显微镜（SThM),以微米级的空间分辨率,测量了SiC/Cu和SiC/Al电封装复合材料增强相－基体的界面特征和界面导热性能,SThM热图显示出材料界面导热性能的差异,对形貌数据和热数据进行统计分析和转换,确定了复合材料的界面宽度和界面导热率。     

Thermal microscopy of electronic materials

Due to an increasing level of device integration and progressive device miniaturization, the thermal management requires comprehensive microscopic investigations of thermal properties as heat dissipation on the micro- and nanoscale. Today heat management is one of the key limiting factors in a wide range of electronic applications, e.g. in automotive and electro-mobility. In this review, an overview on far-field and near-field thermal microscopy techniques using infrared thermography, laser beam techniques, and scanning probe microscopy is given. The common aim of all these approaches is to get access to temperature distributions, heat transport mechanisms, thermos-elastic quantities, as well as thermoelectric properties of electronic materials on microscopic levels. Examples for devices inspections, for integrated circuit analysis, and for thin film technology applications at micro and nanoscale are presented.     

用扫描热显微镜研究材料表面微区热导分布

从集总参数模型出发,初步分析了热敏电阻型热探针的热传导机制和热物性测量机理,说明了扫描热探针的信号与样品表面温度、样品与探针间的热阻以及样品热导率等因素有关。在不同的工作条件下,可分别用以进行表面的温度分布和微区热导分布等热参数的测量。选定Ｓｉ－ＳｉＯ２标准样品,定性地讨论了表面形貌和样品热导率对测量结果的影响。把扫描热显微镜用于复合材料研究,得到的热像图提供了微区热导分布的信息。     

金属基复合材料界面导热性能的扫描热探针测试

利用扫描热探针方法,以微米级的空间分辨率,分析测试了三种馆长在复合材料（ＭＭＣ）界面特征和界面导热性能,应用数学统计方法对扫描热显微镜（ＳＴhM)的形貌和热电压数据进行处理和转换,获得 面宽度和界面导热率数据,结果表明,金属基复合材料宏观导热性能与增强相一基体界面的导热性能密切相关。     

Spatially and temporally resolved thermal imaging of cyclically heated interconnects by use of scanning thermal microscopy

A scanning thermal microscope with a Wollaston probe was used to investigate the spatial distribution and temporal variation of temperature in interconnect structures subjected to thermal cycling. The probe, utilized in passive temperature sensing mode, was calibrated from 20 degrees C to 200 degrees C using a single-layer aluminum microdevice. Spatial measurements were performed on nonpassivated aluminum interconnects sinusoidally heated by a 6 MA/cm(2) current at 200 Hz. The interconnects were determined to have temperatures that decreased with position from a maximum located at the center of both the interconnect length and width. Time-resolved temperature measurements were performed on the same structures sinusoidally heated by a 6 MA/cm(2) current at 2 Hz. Both the peak-cycle temperature and average-cycle temperature were found to decrease with increasing distance from the center of the width of the interconnects.