Morphological study of thin films: Simulation and experimental insights using horizontal visibility graph

We studied the morphological nature of various thin films such as silicon carbide (SiC), diamond (C), germanium (Ge), and gallium nitride (GaN) on silicon substrate Si(100) using the pulsed laser deposition (PLD) method and Monte Carlo simulation. We, for the first time, systematically employed the visibility algorithm graph to meticulously study the morphological features of various PLD grown thin films. These thin-film morphologies are investigated using random distribution, Gaussian distribution, patterned heights, etc. The nature of the interfacial height of individual surfaces is examined by a horizontal visibility graph (HVG). It demonstrates that the continuous interfacial height of the silicon carbide, diamond, germanium, and gallium nitride films are attributed to random distribution and Gaussian distribution in thin films. However, discrete peaks are obtained in the brush and step-like morphology of germanium thin films. Further, we have experimentally verified the morphological nature of simulated silicon carbide, diamond, germanium, and gallium nitride thin films were grown on Si(100) substrate by pulsed laser deposition (PLD) at elevated temperature. Various characterization techniques have been used to study the morphological, and electrical properties which confirmed the different nature of the deposited films on the Silicon substrate. Decent hysteresis behavior has been confirmed by current-voltage (IV) measurement in all the four deposited films. The highest current has been measured for GaN at ～60 nA and the lowest current in SiC at ～30 nA level which is quite low comparing with the expected signal level (μA). The HVG technique is suitable to understand surface features of thin films which are substantially advantageous for the energy devices, detectors, optoelectronic devices operating at high temperatures.     

北斗三星无源定位技术

介绍了北斗双星定位系统的特点、功能、系统组成和工作原理,说明了北斗有源定位方式在应用方面的局限性。针对北斗有源定位方式不能无线电静默,和人们对具有无线电隐蔽性的卫星定位的需求,详细介绍一种北斗三星无源定位技术:包括工作原理、实现方法、定位精度分析和目前达到的定位精度。阐述了北斗三星无源定位技术的优点和应用形势。     

浅析高校新校区选址主要影响因素

从政策、城市与区域规划、环境、文化及其传承因素、基础设施等方面探析了高校新校区选址有关的主要影响因素，以满足高等学校大规模的扩建要求，促进高等教育的发展。     

洪家渡水电站工程高边坡综述

乌江洪家渡水电站坝址河谷深切300余m,硬质岩与软质岩相间分布,岸坡地形陡峻,软弱夹层发育,卸荷、崩塌等物理地质作用强烈。根据坝址地质条件与电站枢纽布置,工程存在:隧洞群进水口同向高边坡整体稳定问题;坝肩开挖、隧洞进出口开挖、厂房开挖及料场开挖等高边坡稳定问题;泄洪冲刷及雾化区1号、2号塌滑体高边坡稳定问题;王家渡堆料场、瓦房寨砂石系统高边坡稳定问题。因此,工程高边坡稳定问题是本工程的主要工程问题之一,但通过参建各方共同努力,本工程高边坡处理都取得了圆满成功。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

液压集成块校核软件的编制和应用

本文叙述了液压集成块校核软件的编制思想和方法，并重点介绍了编制过程中所使用的相关技术，同时给出部分源程序。     

儒家伦理价值及其评价

对儒家伦理的基本价值与基本特点以及局限性进行了疏理和分析，对于国内外学者对儒家伦理的肯定性评价和提出的有关儒学研究的理论方法作出了评介，在此基础上提出了研究儒家伦理的几点认识和启示．     

最值求解技巧:巧变四数

在用基本不等式求最值时,大家都熟悉一个口诀:"一正二定三相等",但是有许多学生在怎样保证定值和相等时不知道该如何变形.为了解决学生的困难和困惑,我根据自己的经验,概括为两句口诀:"一正二定三相等,巧变四数定乾坤".     

板栅模具设计中的几个问题

通过对板栅模具设计中遇到的几个实际问题的分析提出处理意见 ,从而达到科学合理地设计板栅模具。