半导体量子点中极化子的有效质量

研究了半导体量子点中极化子的有效质量.采用改进的线性组合算符方法,导出在电子-体纵光学声子(LO)强耦合时抛物量子点中极化子的振动频率、相互作用能和有效质量随受限强度和电子-声子耦合强度的变化.对RbCl晶体量子点进行了数值计算,结果表明,量子点受限越强,半导体量子点中强耦合极化子的振动频率和有效质量就越大;极化子的相互作用能随受限强度的增加先急剧增加,当达到极值后,随受限强度的增加而急剧减少     

量子阱中强耦合极化子的性质

采用改进的线性组合算符和变分相结合的方法，导出了量子阱中强耦合极化子的振动频率和有效质量；讨论了阱宽和电子-声子耦合强度对强耦合极化子的有效质量的影响以及极化子的速度对振动频率、基态能量、基态结合能和有效质量的影响。通过数值计算结果表明；强耦合极化子的有效质量随阱宽的增加而减少，随电子声子耦合强度的增加而增大；极化子的振动频率、有效质量和基态结合能随极化子速度的增大而增加，极化于的基态能量随速度的增大而减小。     

电场中束缚极化子

采用线性组合算符及幺正变换方法研究了电场对量子阱弱耦合束缚极化子的性质的影响.推导出量子阱中束缚极化子的基态能量和库仑束缚势、电场和阱宽的变化关系.数值计算结果表明,基态能量因电场和库仑束缚势的不同而不同,随电场和库仑束缚势的增大而增大,随阱宽的增大而迅速减小.     

磁场对抛物量子点中极化子内部激发态的影响

采用线性组合算符和幺正变换方法研究了外场对抛物量子点中极化子的激发态性质的影响,导出了强、弱耦合情况下极化子的第一内部激发态能量E1、激发能量ΔE、共振频率ω与量子点的有效受限长度l0、电子-声子耦合强度α以及外场B的关系。数值计算结果表明,不论强、弱耦合,磁场中量子点内极化子的λ、E1、ΔE和ω都随l0的减小而增大,而且都随回旋频率ωc(磁场B)的增大而增加。另外,在弱耦合情形下,λ、ΔE和ω均与α无关,而E1随α的增大而减小。相反,在强耦合情形下,λ、E、ΔE和ω均随α的增大而增加。     

极性晶体中Wannier激子结合能的理论计算

作者采用顾世洧势V_(G(r))与三种不同的极化子有效质量公式,对极性晶体中的Wannier激子结合能进行了理论计算。结果发现,顾世洧势V_(G(r))、比IIaken导出的势V_(H(r))与Barentzen导出的势V_(B(r))都好;并且还发现,关于极化子的有效质量公式,LLP的比Haga的好,也比Largreth的优越。     

声子之间相互作用和库仑势对量子点中束缚极化子性质的影响

研究了库仑场中抛物量子点中束缚极化子的性质.采用线性组合算符和微扰法,导出了量子点中束缚极化子的基态能量.在计及电子在反冲效应中发射和吸收不同波矢的声子之间的相互作用下,研究了其对量子点中束缚极化子的基态能量的影响.数值计算表明:当考虑声子之间的相互作用时,量子点中束缚极化子的基态能量随量子点的有效受限长度的减小而迅速增大.当l0＞1.0时,必须考虑声子之间的相互作用对基态能量的影响.     

Transport Properties of K_xV_2O_5·nH_2O Nanocrystalline Films

Five different compositions of K x V 2 O 5 ·nH 2 O(where x=0.00,0.0017,0.0049,0.0064 and 0.0091 mol) were prepared by the sol-gel process.Electrical conductivity and thermoelectric power were measured parallel to the substrate surface in the temperature range of 300-480 K.The electrical conductivity showed that all samples were semiconductors and that conductivity increased with increasing K content.The conductivity of the present system was primarily determined by hopping carrier mobility.The carrier density was evaluated as well.The conduction was confirmed to obey non-adiabatic small polaron hopping.The thermoelectric power or Seebeck effect,increased with increasing K ions content.The results obtained indicated that an n-type semiconducting behavior within the temperature range was investigated.     

Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells

The properties of polarons in zinc-blende and wurtzite GaN/AlN quantum wells with Fr(o|¨)hlich interaction Hamiltonians are compared in detail.The energy shifts of polarons at ground state due to the interface(IF), confined(CO) and half-space phonon modes are calculated by a finite-difference computation combined with a modified LLP variational method.It is found that the two Fr(o|¨)hlich interaction Hamiltonians are consistent with each other when the anisotropic effect from the z-direction and the x-y plane is neglected.The influence of the anisotropy on the polaron energy shifts due to the IF phonon modes for a smaller well width or due to the CO phonon modes for a moderate well width is obvious.In addition,the built-in electric field has a remarkable effect on the polaron energy shifts contributed by the various phonon modes.     

Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells

本文详细比较闪锌矿和纤锌矿GaN/AlN量子阱中Fr?hlich电声子相互作用哈密顿量及极化子性质。采用LLP变分方法计算由界面、局域和半空间声子模导致的基态极化子能移。结果表明,若忽略z方向和x-y平面之间异性的影响,闪锌矿和纤锌矿哈密顿量是一致的。各向异性在窄阱情形对界面声子能移的影响较为明显,而在略宽阱时对局域声子能移影响明显。此外,内建电场对各支光学声子引起的能移的影响较大。