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Porous polyimide (PI) films with low dielectric constants and excellent thermal properties have been a pressing demand for the next generation of high-performance, miniature, and ultrathin microelectronic devices. A series of novel porous PI films containing fluorenyl-adamantane groups were prepared successfully via thermolysis of poly(ethylene glycol) (PEG) added in the PI matrix. The cross-sectional morphologies of porous PI films showed closed pores with diameters ranging from 135 to 158 nm, which were uniform and regular in shape without interconnectivity. These porous PI films exhibited excellent thermal properties with a glass-transition temperature at 376 °C whereas the 5% weight loss temperature in air excess of 405 °C due to enhanced rigidity afforded by fluorenyl-adamantane groups. Accompanied by thermolysis content of PEG increasing from 0 to 20 wt %, the density of porous PI films decreased, and the corresponding porosity grew significantly from 0 to 11.48%. Depending on porosity, the dielectric constant and dielectric loss of porous PI films significantly declined from 2.89 to 2.37 and from 0.050 to 0.021, respectively. These excellent properties benefit the as-prepared porous PI films for application as interlayer dielectrics, integrated circuit chips, or multichip modules in microelectronic fields. © 2018 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019 , 136, 47313. 相似文献
3.
摩擦强度对薄膜表面形态的作用:原子力显微镜下的观察 总被引:2,自引:2,他引:0
展示了摩擦强度对聚酰亚胺薄膜表面形态的影响,原子力显微图像显示,机械摩擦会使聚酰亚胺薄膜表面上形成微沟槽,这些沟槽的表面具有丰富的表面精细构造。原子显微图像还揭示了机械摩擦可以改变被磨擦聚酰亚胺膜的表面形态。 相似文献
4.
JIAHong-bo CHENBao-xue ZHOUJian-zhong ZHAODe-xir LUHong-liang YUANYi-fang ISOMamoru 《半导体光子学与技术》2004,10(1):21-27
Based on the measurement of dispersion characteristic and birefractive index of the fluorinated polyimide film,a statistical optimum design method is proposed and used to realize the design of 32-and 36-wavelengths optical waveguide wavelength-interleave coupler (i,e.,interleaver) with the optimization of polarization fluctuation and wavelength interval of 0.8nm at 1550nm. The largest cross coupling ratios of the two interleavers are respectively less than 1.8% and 3.5%, while the least through coupling ratios are respectively greater than 98. 2% and 96. 5%. The output differences due to polarization fluctuation are less than 1.7% and 3.2% 相似文献
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This communication describes the application and extension of a method for calculating the helical parameters with which to describe molecular conformations. The method, which was originally developed by Shimanouchi and others, is applied to a polyimide of 3,3′,4,4′-benzophenonetetracarboxylic dianhydride (BTDA) and 2,2-dimethyl-1,3-(4-aminophenoxy)propane (DMDA) which has eight torsional bonds in the chemical repeat unit. Discrete low energy states for these torsions were determined by Ramanchandran energy maps of sequential dihedral pairs or single bond torsional energy diagrams. The total number of possible low energy conformations for these states is 1152 including conformationally related isoenantiomorphs. The method conveniently generates the conformations for subsequent crystal structure packing and refinement. Consideration of these together with the X-ray data of Cheng and co-workers reduces the number to about 15 with about a 2/1 conformation and a c axis of approximately 49.2 Å. Of these, about half appear to be good candidates for crystal packing. 相似文献
7.
A novel positive‐working photosensitive polyimide (PSPI) based on a poly(hydroxyimide) (PHI), a crosslinking agent having vinyl ether groups, and a photoacid generator (PAG) was prepared. The PHI as a base resin of the three‐component PSPI was synthesized from 4,4′‐oxydiphthalic anhydride and 2,2′‐bis(3‐amino‐4‐hydroxyphenyl)hexafluoropropane through ring‐opening polymerization and subsequent thermal cyclization. 2,2′‐bis(4‐(2‐(vinyloxy)ethoxy)phenyl)propane (BPA‐DEVE) was used as a vinylether compound and diphenyliodonium 5‐hydroxynaphthalene‐1‐sulfonate was used as a PAG. The phenolic hydroxyl groups of the PHI and the vinyl ether groups of BPA‐DEVE are thermally crosslinked with acetal structures during prebake step, and the crosslinked PHI becomes completely insoluble in an aqueous basic solution. Upon exposure to UV light (365 nm) and subsequent postexposure bake (PEB), a strong acid generated from the PAG cleaves the crosslinked structures, and the exposed area is effectively solubilized in the alkaline developer. The dissolution behavior of the PSPI containing each 11.5 wt % of BPA‐DEVE and of the PAG was studied after UV exposure (365 nm) and PEB. It was found that the difference in dissolution rates between exposed and unexposed areas was enough to get high resolution. A fine positive pattern with a resolution of 5 μm in a 3.7‐μm‐thick film was obtained from the three‐component PSPI. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci, 2008 相似文献
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Three new polymeric aromatic lithium sulfonylimides were used as salts in high molecular weight poly(ethylene oxide) (PEO) electrolytes. Their conductivity and electrochemical stability behaviors were investigated. The electrolytes with lithium poly[4,4′‐(hexafluoroisopropylidene)diphenoxy]sulfonylimide (LiPHFIPSI) showed a better conductive performance compared with the other two lithium salts. The best conductivity was obtained for PEO/LiPHFIPSI EO/Li = 16 (1.90 × 10?4 S/cm at 60°C). Thermal analysis indicated that the salts effectively decreased the crystallinity of PEO. Moreover, the electrolytes also had good electrochemical stability and their oxidative potential was to 5.5 V versus Li/Li+. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 85: 1802–1805, 2002 相似文献
10.
A unique substrate MCPM (Mitsubishi Copper Polyimide Metal-base) technology has been developed by applying our basic copper/polyimide
technology.1 This new substrate technology MCPM is suited for a high-density, multi-layer, multi-chip, high-power module/package, such
as used for a computer. The new MCPM was processed using a copper metal base (110 × 110 mm), full copper system (all layers)
with 50-μm fine lines. As for pad metallizations for the IC assembly, we evaluated both Ni/Au for chip and wire ICs and solder
for TAB ICs. The total number of assembled ICs is 25. To improve the thermal dispersion, copper thermal vias are simultaneously
formed by electro-plating. This thermal via is located between the IC chip and copper metal base, and promotes heat dispersion.
We employed one large thermal via (4.5 mm?) and four small vias (1.0 mm?) for each IC pad. The effect of thermal vias and/or base metal is simulated by a computer analysis and compared with an alumina
base substrate. The results show that the thermal vias are effective at lowering the temperature difference between the IC
and base substrate, and also lowering the temperature rise of the IC chip. We also evaluated the substrate’s reliability by
adhesion test, pressure cooker test, etc. 相似文献