VO2/GaAs异质结的制备及其光电特性研究

采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_2/pGaAs异质结,研究了不同退火温度和退火时间对VO_2/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_2薄膜,相变前后电阻变化约2个数量级。VO_2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_2相变特性的异质结光电器件的设计与应用提供了可行性。     

Fundamental Evaluation of Power Supply and Rectifiers for Wireless Power Transfer Using Magnetic Resonant Coupling

This paper provides a fundamental analysis of a power supply and rectifiers for wireless power transfer using magnetic resonant coupling (MRC). MRC enables efficient wireless power transfer over middle‐range transfer distances. MRC for wireless power transfer should operate at a high frequency in the industry science medical band, such as 13.56 MHz, because the size of the transfer device decreases at higher transfer frequencies. Therefore, the output frequency of the power supply on the transmitting side should be 13.56 MHz. In addition, the rectifier on the receiving side is operated at a high frequency. This paper focuses on the reflected power in the power supply and rectifiers. Thus, the parametric design method is clarified for the power supply, including a low‐pass filter to match the output, the impedance of the power supply with the characteristic impedance of the transmission line. In addition, the effects on the rectifiers of silicon carbide and gallium nitride diodes are confirmed by performing an experiment and a loss analysis.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

250W带功率因数校正整流电源模块的研制

功率因数校正技术越来越成为电源行业研究的热点。文中介绍了适用于雷达等设备的250W带功率因数校正整流电源模块的设计，分析了其中升压电感器设计、主开关管保护、控制电路消振、散热设计和表面贴装等关键技术，完成了实验研究，获得了满意的试验结果。     

用Simadyn-D改造宝钢150t电弧炉整流器控制系统

宝钢炼钢厂150 t电弧炉是我国目前最大的直流电弧炉,2003年对其整流器控制系统进行了改造。新系统采用的硬件是西门子公司的Simadyn-D系统,采用CFC编程环境。由于新系统可以与冶炼弧流模型紧密结合,因此保证了在各冶炼阶段调节器性能的最优。     

Analysis of brushless three-phase synchronous generator without exciter

Recently, a demand for small-capacity generators has been increasing as electric sources in small ships and automobiles or as portable electric sources driven by engines. It is desired that the structure of small-capacity generators be simple and robust, and that the generators be highly reliable, easily maintained and controlled. This paper describes an analysis of the original brushless synchronous generator without exciter. The output voltage can be adjusted in the wide range by controlling the stator dc current. To analyze the characteristics of this generator, the finite element method is applied. It is found that the results of theoretical analysis agree well with the experimental results.     

铁路站段用交流不间断电源供电系统

结合铁路站段的特点 ,介绍了一种交流不间断电源供电系统 ,能够很好的解决其供电问题。     

铝电解生产节能初探

本主要是从实行设备的经济运行、提高整流系统的利用率、以及改革落后工艺，改进操作这几个方面进行探讨，并进行了实施推广，从而取得了良好的经济效益。     

电子辐照加速器大功率工频高压电源

文章介绍目前两种用于烟气脱硫加速器的不同形式直流高压电源，分析了它们各自的特点。针对它们存在的不足之处，提出了一种全新的倍压型桥式整流线路，并对此线路进行了理论推导和计算机模拟仿真。     

浅议轨道交通直流牵引供电系统的构成及保护配置

介绍了城市轨道交通直流牵引供电系统的构成,详细叙述了直流牵引供电系统的主要电气设备及其连接方法,以及系统的运行方式.另外,还简单介绍了系统配置的直流保护以及保护原理和保护作用.