A new design strategy for DC/DC LLC resonant converter: Concept,modeling, and fabrication

In this paper, a new design procedure for LLC converter has been introduced. In fact, this method is a computer-based design algorithm based on a numerical technique. In the process of designing, the value of the resonant element is obtained by solving the LLC converter fundamental equation. This converter will be controlled by using state feedback, such as output voltage variable. As a matter of fact, in a control system, the change of output voltage (because of load variation) will affect the switching frequency, so the output voltage will be tuned. In the designing process, the fundamental equations of LLC converter are obtained, and the value of the resonant elements is calculated. Also, a comparison analysis is carried out between the proposed and typical methods. The simulation is done to investigate the validity of the proposed method. Moreover, a prototype is manufactured, and the experimental test is done to evaluate its applicability.     

2.5GHz低相位噪声CMOS LC VCO的设计

用0 .35μm、一层多晶、四层金属、3.3V的标准全数字CMOS工艺设计了一个全集成的2 .5 GHz L C VCO,电路采用全差分互补负跨导结构以降低电路功耗和减少器件1/ f噪声的影响.为了减少高频噪声的影响,采用了在片L C滤波技术.可变电容采用增强型MOS可变电容,取得了2 3%的频率调节范围.采用单个16边形的对称片上螺旋电感,并在电感下加接地屏蔽层,从而减少芯片面积,优化Q值.取得了在离中心频率1MHz处- 118d Bc/ Hz的相位噪声性能.电源电压为3.3V时的功耗为4 m A.     

CMOS光接收机主放大器设计

利用CMOS工艺设计一种用于SDH STM 4速率级(622 Mb/s)光纤用户网的光接收机放大电路。此电路由输入/输出缓冲、主放大单元、偏置补偿电路4部分组成。通过直接耦合技术提高增益,降低功耗;利用有源电感负载提高系统带宽。采用商用SmartSpice电路仿真软件和CSMC HJ 0.6μm工艺参数对该电路进行仿真。结果表明,该电路在5 V工作电压下中频增益为81 dB,3 dB带宽为470 MHz。     

5Gb/s 0.25μm CMOS限幅放大器

采用TSMC 0.25μm CMOS技术设计实现了高速低功耗光纤通信用限幅放大器.该放大器采用有源电感负载技术和放大器直接耦合技术以提高增益,拓展带宽,降低功耗并保持了良好的噪声性能.电路采用3.3V单电源供电,电路增益可达50dB,输入动态范围小于5mVpp,最高工作速率可达7Gb/s,均方根抖动小于0.03UI.此外核心电路功耗小于40mW,芯片面积仅为0.70mm×0.70mm.可满足2.5,3.125和5Gb/s三个速率级的光纤通信系统的要求.     

基于谐振原理的硅微机械加速度计

基于力学振动原理 ,导出敏感梁类谐振振动的微分方程 ,给出了振梁型加速度计的设计原理。指出了加速度计谐振梁频率的相对变化量与梁的厚度无关 ;为避免输出非线性频率信号 ,频率的相对变化率和激励振动的振幅都不宜太大     

纳米加工和纳米电子器件

介绍了电子束曝光技术、EUV光刻技术和X射线光刻技术的进展;对各种纳米电子器件如单电子器件、共振隧穿器件和分子电子器件的研究现状及面临的主要挑战进行了讨论。     

可见光共振腔发光二极管的研究进展

共振腔发光二极管是一种具有优良发光性能的光电器件。概述了对可见光共振腔发光二极管的共振腔结构、反射镜材料体系、基本工作机理和发光特性，并展望了这种器件的发展前景。     

薄膜微型电源

介绍了新型的薄膜微型电源的工作原理、结构及制造工艺。     

Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures

The Rashba effect resonant tunneling diode is a candidate for achieving spin polarizing under zero magnetic field using only conventional non-magnetic III–V semiconductor heterostructures. We point out the challenges involved based on simple arguments, and offer strategies for overcoming these difficulties. We present modeling results that demonstrate the benefits of the InAs/GaSb/AlSb-based asymmetric resonant interband tunneling diode (a-RITD) for spin filtering applications.     

Compact equivalent circuit model of two‐layer spiral inductors

A compact lumped‐element equivalent circuit model of two‐layer integrated spiral inductors on silicon substrates is developed in this article. Based on this proposed model, excellent agreements are achieved between the measured and simulated S‐parameters for different inductors. Also, both self‐ and mutual inductances of two‐layer inductors are accurately extracted, and their overall performances are understood clearly. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 148–153, 2003.