Transport properties in spinel ferrite/graphene oxide nanocomposites for electromagnetic shielding

Herein, $\left({\text{Co}}_{0.5}{\text{Ni}}_{0.5}\right){\text{Cr}}_{0.3}{\text{Fe}}_{1.7}{\text{O}}_4$/graphene oxide nanocomposites were fabricated by ultrasonication technique, using pure spinel ferrite and graphene oxide synthesized by sol-gel method and modified Hummers' method, respectively. The effect of graphene incorporation with ferrite nanoparticles was studied by X-ray diffraction (XRD), electrical and dielectric measurements. XRD analysis revealed the spinel phase for the ferrite sample and confirmed the formation of graphene oxide. The crystallite size was found in the range of $37-43\text{ nm}$ and the porosity increased with the increase in the concentration of graphene oxide in the composites. The DC electrical resistivity of spinel ferrite was found equal to $3.83\times {10}^9\text{ Ω}.\text{cm}$ and it substantially decreased with the increase in the percentage of graphene oxide at room temperature. The real and imaginary part of relative permittivity followed the Maxwell-Wagner type of interfacial polarization. AC conductivity confirmed the conduction by hopping mechanism and increased on increasing the GO content. The coupling of magnetic ferrite with graphene oxide tunes the magneto-electrical properties for potential applications at high frequencies.     

Synthesis,characterization and charge transport properties of Pr–Ni Co-doped SrFe2O4 spinel for high frequency devices applications

Ferrites are materials of interest due to their broad applications in high technological devices and a lot of research has been focused to synthesize new ferrites. In this regard, an effort has been devoted to synthesize spinel Pr–Ni co-substituted strontium ferrites with a nominal formula of Sr_1-xPr_xFe_2-yNi_yO₄ (0.0 ≤ x ≤ 0.1, 0.0 ≤ y ≤ 1.0). The cubic structure of pure and Pr–Ni co-substituted strontium ferrite samples calcinated at 1073 K for 3 h has been confirmed through X-ray diffraction (XRD). Average sizes of crystallites (18–25 nm) have been estimated from XRD analysis and nanometer particle sizes of synthesized ferrites have been further verified by scanning electron microscopy (SEM). SEM results have also shown that particles are mostly agglomerated and all the samples possess porosity. It has been observed that at 298 K, the values of resistivity (ρ) increase, while that of AC conductivity, dielectric loss, and dielectric constants decrease with increasing amounts of Pr³⁺ and Ni²⁺ ions. The values of dielectric parameters initially decrease with frequency and later become constant and can be explained on the basis of dielectric polarization. Electrochemical impedance spectroscopy (EIS) studies show that the charge transport phenomenon in ferrite materials is mainly controlled via grain boundaries. Overall, synthesized ferrite materials own enhanced resistivity values in the range of 1.38 × 10⁹–1.94 × 10⁹ Ω cm and minimum dielectric losses, which makes them suitable candidates for high frequency devices applications.     

Structural Analysis of silica aerogels for the interlayer dielectric in semiconductor devices

As semiconductor devices have become miniaturized and highly integrated, interconnection problems such as RC delays, power dissipation, and crosstalk appear. To alleviate these problems, materials with a low dielectric constant should be used for the interlayer dielectric in nanoscale semiconductor devices. Silica aerogel as a porous structure composed of silica and air can be used as the interlayer dielectric material to achieve a very low dielectric constant. However, the problem of its low stiffness needs to be resolved for the endurance required in planarization. The purpose of this study is to discover the geometric effect of the electrical and mechanical properties of silica aerogel. The effects of porosity, the distribution of pores, the number of pores on the dielectric constant, and elastic modulus were analyzed using FEM. The results suggest that the porosity of silica aerogel is the main parameter that determines the dielectric constant and it should be at least 0.76 to have a very low dielectric constant of 1.5. Additionally, while maintaining the porosity of 0.76, the silica aerogel needs to be designed in an ordered open pores structure (OOPS) containing 64 or more pores positioned in a simple cubic lattice point to endure in planarization, which requires an elastic modulus of 8 GPa to prevent delamination.     

Optimized Biocatalytic Synthesis of 2-Selenopyrimidine Nucleosides by Transglycosylation**

Selenium-modified nucleosides are powerful tools to study the structure and function of nucleic acids and their protein interactions. The widespread application of 2-selenopyrimidine nucleosides is currently limited by low yields in established synthetic routes. Herein, we describe the optimization of the synthesis of 2-Se-uridine and 2-Se-thymidine derivatives by thermostable nucleoside phosphorylases in transglycosylation reactions using natural uridine or thymidine as sugar donors. Reactions were performed at 60 or 80 °C and at pH 9 under hypoxic conditions to improve the solubility and stability of the 2-Se-nucleobases in aqueous media. To optimize the conversion, the reaction equilibria in analytical transglycosylation reactions were studied. The equilibrium constants of phosphorolysis of the 2-Se-pyrimidines were between 5 and 10, and therefore differ by an order of magnitude from the equilibrium constants of any other known case. Hence, the thermodynamic properties of the target nucleosides are inherently unfavorable, and this complicates their synthesis significantly. A tenfold excess of sugar donor was needed to achieve 40−48 % conversion to the target nucleoside. Scale-up of the optimized conditions provided four Se-containing nucleosides in 6–40 % isolated yield, which compares favorably to established chemical routes.     

A Voltage Control Method for a Distributed Line Feeder by means of Multiagent Approach

This paper proposes a method for the coordinated control of power factor by means of a multiagent approach. The proposed multiagent system consists of two types of agent: single feeder agent (F_AG) and bus agent (B_AG). In the proposed system, an F_AG plays as an important role, which decides the power factors of all distributed generators by executing the load flow calculations repeatedly. The voltage control strategies are implemented as the class definition of Java into the system. In order to verify the performance of the proposed method, it has been applied to a typical distribution model system. The simulation results show that the system is able to control very violent fluctuation of the demands and the photovoltaic (PV) generations.     

基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

Design and performance study of phase‐locked loop using fractional‐order loop filter

The present work reports the realization of an analog fractional‐order phase‐locked loop (FPLL) using a fractional capacitor. The expressions for bandwidth, capture range, and lock range of the FPLL have been derived analytically and then compared with the experimental observations using LM565 IC. It has been observed that bandwidth and capture range can be extended by using FPLL. It has also been found that FPLL can provide faster response and lower phase error at the time of switching compared to its integer‐order counterpart. Copyright © 2014 John Wiley & Sons, Ltd.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Three-phase four-wire shunt active power filter based on the SOGI filter and Lyapunov function for DC bus control

The three-phase four-wire shunt active power filter (SAPF) was developed to suppress the harmonic currents generated by nonlinear loads, and for the compensation of unbalanced nonlinear load currents, reactive power, and the harmonic neutral current. In this work, we consider instantaneous reactive power theory (PQ theory) for reference current identification based on the following two algorithms: the classic low-pass filter (LPF) and the second-order generalized integrator (SOGI) filter. Furthermore, since an important process in SAPF control is the regulation of the DC bus voltage at the capacitor, a new controller based on the Lyapunov function is also proposed. A complete simulation of the resultant active filtering system confirms its validity, which uses the SOGI filter to extract the reference currents from the distorted line currents, compared with the traditional PQ theory based on LPF. In addition, the simulation performed also demonstrates the superiority of the proposed approach, for DC bus voltage control based on the Lyapunov function, compared with the traditional proportional-integral (PI) controller. Both novel approaches contribute towards an improvement in the overall performance of the system, which consists of a small rise and settling time, a very low or nonexistent overshoot, and the minimization of the total harmonic distortion (THD).