High performance H2 sensor based on rGO-wrapped SnO2–Pd porous hollow spheres

Hydrogen (H₂) sensors based on metal oxide semiconductors (MOS) are promising for many applications such as a rocket propellant, industrial gas and the safety of storage. However, poor selectivity at low analyte concentrations, and independent response on high humidity limit the practical applications. Herein, we designed rGO-wrapped SnO₂–Pd porous hollow spheres composite (SnO₂–Pd@rGO) for high performance H₂ sensor. The porous hollow structure was from the carbon sphere template. The rGO wrapping was via self-assembly of GO on SnO₂-based spheres with subsequent thermal reduction in H₂ ambient. This sensor exhibited excellently selective H₂ sensing performances at 390 °C, linear response over a broad concentration range (0.1–1000 ppm) with recovery time of only 3 s, a high response of ～8 to 0.1 ppm H₂ in a minute, and acceptable stability under high humidity conditions (e. g. 80%). The calculated detection limit of 16.5 ppb opened up the possibility of trace H₂ monitoring. Furthermore, this sensor demonstrated certain response to H₂ at the minimum concentration of 50 ppm at 130 °C. These performances mainly benefited from the special hollow porous structure with abundant heterojunctions, the catalysis of the doped-PdO_x, the relative hydrophobic surface from rGO, and the deoxygenation after H₂ reduction.     

A review on some classes of algebraic systems

ABSTRACT

In this paper, we review some algebraic control system. Precisely, linear and bilinear systems on Euclidean spaces and invariant and linear systems on Lie groups. The fourth classes of systems have a common issue: to any class, there exists an associated subgroup. From this object, we survey the controllability property. Especially, from those coming from our contribution to the theory.     

Producing fully-lamellar microstructure for wrought beta-gamma TiAl alloys without single α-phase field

Fine-grained fully-lamellar (FL) microstructure is desired for TiAl components to serve as compressor/turbine blades and turbocharger turbine wheels. This study deals with the process and phase transformation to produce FL microstructure for Mo stabilized beta-gamma TiAl alloys without single α-phase field. Unlike the α + γ two-phased TiAl or beta-gamma TiAl with single α-phase field, the wrought multi-phase TiAl–4/6Nb–2Mo–B/Y alloys exhibit special annealing process to obtain FL microstructure. Short-term annealing at temperatures slightly above β-transus is recommended to produce the desired FL microstructure. The related mechanism is to guarantee the sufficient diffusion homogenization of β stabilizers during single β-phase annealing, and further avoid α decomposition by α → γ + β when cooling through α + β + γ phase field. The colony boundary β phase contributes to fine-grained nearly FL microstructure, by retarding the coarsening of the α phase grains.     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

指纹考勤管理软件的研究与实现

针对企、事业单位原有的考勤系统，如打卡钟、磁卡、IC卡等考勤方式存在代打卡、卡丢失等不足和缺陷的实际，结合指纹识别技术，建立一套考勤、薪资、人事管理于一体的软件系统。给出了系统的体系结构和功能实现，能使企业考勤管理更加简便快捷、客观公正。并提出了进一步的发展方向和展望。     

嵌人式与独立存储器设计上的差异分析和研究

进入21世纪,随着集成电路的发展,SoC(System on Chip)片上系统应运而生。而作为SoC重要组成部分的嵌入式存储器,在SoC中所占的比重正逐步增加,并起着越来越重要的作用,那么嵌入式存储器与独立的存储器芯片在设计上存在着哪些差异?对此本文将以NOR型闪存为例在制造工艺的选取、衍生产品的设计、功耗与噪声、后端功能仿真、测试与修复等方面进行分析和研究。     

动力环境网络监控精细管理

叙述动力环境运行质量分析管理，包括故障管理，性能管理和专题分析管理，以动力环境网络监控细致八微、言之有据的月度分析管理实例展现了其精细管理的效果。     

原油常减压装置节能技术

由于常减压装置消耗能量约占炼油厂总用能的25％～30％，已成为炼油厂中消耗量最大的装置，因此，我国各炼油厂对常减压装置进行以降低能耗为中心的技术改造就显得十分必要。详细介绍了适用于常减压装置节能的新工艺、新设备以及优化操作。工艺方面主要有采用过滤脱盐新技术对原油进行深度脱盐、采用强化蒸馏新工艺提高原油蒸馏拔出率、优化产出、增产柴油；设备方面主要使用规整填料和新型塔板改善分馏塔分馏效率、使用新型燃烧器提高加热炉效率、使用新型换热器提高热回收率、采用变频技术降低装置电耗；优化操作方面主要有利用计算机进行监控与管理和改善操作条件。最后对国内原油常减压装置节能改造提出了一些建议，以供炼油企业在进行原油常减压装置改造时参考。     

对基于交换网络分层结构的软件无线电方案的改进

通过比较各种软件无线电结构的优缺点,针对既具有交换网络结构又具有分层结构优点的基于交换网络的分层无线电结构方案,提出了部分改进思想。     

分布式光纤拉曼放大器的增益平坦设计

介绍了在波分复用（WDM）系统中分布式光纤拉曼放大器（FRA）的理论分析模型。在此基础上，对增益平坦设计所需考虑的因素进行了分析；最后通过试验证明了它的有效性。