基于汽车振动分析的发动机在线转速实验研究

为方便简易地满足环保检测时对发动机转速测量的实时要求,在比较了传统的测量方法的优缺点后,采用无需拆卸机械的振动检测法.为得到更精确的转速,对振动信号的分析方法进行了设计.首先利用相关分析对采集到的信号进行时域消噪处理,其次在频域利用CZT变换以振动基频附近的较小范围进行窄带分析,软件仿真结果较好地满足了要求.现场实验采集夏利振动信号进行处理,误差分析证明该方法的可行性、实用性,实际应用中用DSP实现,适用于各种车辆.     

一款应用于多通道CZT探测器的12-bit 1MS/s SAR-ADC芯片

本文提出了一种应用于多通道CZT探测器低功耗、小面积、抗辐照12位1MS/s逐次逼近模数转换器芯片。为了提高SAR-ADC的精度,提出了一种新型比较器,该比较器能够实现失调电压自校准功能。同时为了减少电荷分配DAC中电容失配的问题,提出了分散式电容阵列。通过电路级和版图级技术加固,提高该SAR-ADC芯片的抗辐照能力。原型芯片采用TSMC 0.35um 2P4M CMOS工艺。电源电压为3.3V和5V,采样率是1MS/s。该SAR-ADC芯片能够实现高达67.64dB的信纳比SINAD,然而仅消耗10mWz功耗。该芯片核心面积为1180um×1080um。     

CZT晶体用化学机械抛光液的制备及其性能研究

化学机械抛光工艺是碲锌镉(Cadmium Zinc Telluride,CZT)晶体表面处理的关键技术之一.其中,化学机械抛光液是影响晶片表面质量的重要因素.目前用于CZT晶片的抛光液主要是依靠进口的碱性抛光液,这严重制约了我国CZT晶体研究的发展.采用硅溶胶和次氯酸钠(NaClO)溶液作为主要原料,制备了碱性化学机械抛光液.然后采用该抛光液对CZT晶片表面进行了化学机械抛光,并对抛光表面进行了表征.实验结果表明,抛光后晶片表面的粗糙度小于2 nm,因此采用硅溶胶-次氯酸钠碱性抛光液可制备出高质量的CZT抛光表面.     

Infrared transmission spectra of Cd<Subscript>1−x</Subscript>Zn<Subscript>x</Subscript>Te (x = 0.04) crystals

Three indicators (T₁₀₀₀, T₅₀₀₀, and T₁₀₀₀/T₅₀₀₀) are used to appraise the infrared (IR) transmission spectra for Cd_1−xZn_xTe (CZT) slices. By comparing the values of these three indicators, four typical types of IR spectra are characterized for CZT crystals. The CZT crystals possessing the four types of IR spectra are different in microstructures, especially the densities and sizes of Te precipitates, the free carrier concentrations, and the resistivities. Mechanisms for the elimination of tiny and dense Te precipitates are given by analyzing the variation of the IR transmittance in the range of 500–5000 cm⁻¹ during the annealing process.     

温度对CdZnTe载流子输运特性和能谱特性的影响

采用垂直布里奇曼法生长的CdZnTe(CZT)单晶,制备出单平面探测器。在210～300K温度范围内,测试了不同外加偏压作用下探测器的漏电流,并计算了低压下CZT的体电阻率。同时,在不同电场作用下,测试了CZT探测器对未经准直的241 Am@5.48 MeVα粒子脉冲响应信号的上升时间,计算出电子迁移率为1 360cm2/V-1s-1,并进一步推算出电子寿命随温度的变化规律。在220～300K温度范围内,对比了CZT探测器对241 Am@59.5keVγ射线的能谱响应结果,分析了载流子传输特性及器件性能随温度的变化规律。结果表明,在298～253K温度范围内,降低温度可以提高晶体的体电阻率,减少探测器工作时的漏电流,进而提高探测器的能量分辨率;但当温度低于253K时,电子寿命τe加剧减小,此时由上升时间起伏而引起的全能峰的展宽不能被忽略,导致探测器性能恶化。     

Cd1-xZnxTe太阳电池的一维数值模拟研究

具有禁带宽度在1.45～2.25eV连续可调特性的Cd1-xZnxTe(CZT)薄膜,用于顶电池在叠层薄膜太阳电池中有巨大的应用潜力。文章使用AMPS-1D对CdS/CZT结构的薄膜太阳电池进行模拟,研究了CZT与金属接触的背电极势垒、CZT薄膜厚度及掺杂浓度对CdS/CZT电池器件性能的影响。结果表明,需要采用功函数高(大于5.8eV)的金属作为背电极以消除背电极势垒;CZT薄膜厚度低于10μm时,增加厚度有助于增大电池短路电流;当CZT具有适当厚度(～6μm)时,对CZT层进行重掺杂(掺杂浓度1019～1021 cm-3)有助于获得更高效率的CdS/CZT电池。     

Simulation, modeling, and crystal growth of Cd0.9Zn0.1Te for nuclear spectrometers

High-quality, large (10 cm long and 2.5 cm diameter), nuclear spectrometer grade Cd_0.9Zn_0.1Te (CZT) single crystals have been grown by a controlled vertical Bridgman technique using in-house zone refined precursor materials (Cd, Zn, and Te). A state-of-the-art computer model, multizone adaptive scheme for transport and phase-change processes (MASTRAP), is used to model heat and mass transfer in the Bridgman growth system and to predict the stress distribution in the as-grown CZT crystal and optimize the thermal profile. The model accounts for heat transfer in the multiphase system, convection in the melt, and interface dynamics. The grown semi-insulating (SI) CZT crystals have demonstrated promising results for high-resolution room-temperature radiation detectors due to their high dark resistivity (ρ≈2.8 × 10¹¹ Θ cm), good charge-transport properties [electron and hole mobility-life-time product, μτ_e≈(2–5)×10⁻³ and μτ_h≈(3–5)×10⁻⁵ respectively, and low cost of production. Spectroscopic ellipsometry and optical transmission measurements were carried out on the grown CZT crystals using two-modulator generalized ellipsometry (2-MGE). The refractive index n and extinction coefficient k were determined by mathematically eliminating the ∼3-nm surface roughness layer. Nuclear detection measurements on the single-element CZT detectors with ²⁴¹Am and ¹³⁷Cs clearly detected 59.6 and 662 keV energies with energy resolution (FWHM) of 2.4 keV (4.0%) and 9.2 keV (1.4%), respectively.     

线性调频Z变换在钢琴基音检测中的应用

首先分析了钢琴的基音检测要求和线必调频Z变换的性质，并将其用以基音检测中去，使检测的准确度，可靠性，抗干扰性，实时必，稳定性均达到了工厂的要求，大大降低了工人的劳动强度，提高了工厂的生产效率，使产品的质量更加稳定、可靠。     

High-energy X-ray diffraction and topography investigation of CdZnTe

High-energy transmission x-ray diffraction techniques have been applied to investigate the crystal quality of CdZnTe (CZT). CdZnTe has shown excellent performance in hard x-ray and gamma detection; unfortunately, bulk nonuniformities still limit spectroscopic properties of CZT detectors. Collimated high-energy x-rays, produced by a superconducting wiggler at the National Synchrotron Light Source’s X17B1 beamline, allow for a nondestructive characterization of thick CZT samples (2–3 mm). In order to have complete information about the defect distribution and strains in the crystals, two series of experiments have been performed. First, a monochromatic 67 keV x-ray beam with the size of 300×300 μm² was used to measure the rocking curves of CZT crystals supplied by different material growers. A raster scan of a few square centimeter area allowed us to measure the full-width at half-maximum (FWHM) and shift in the peak position across the crystal. The rocking curve peak position and its FWHM can be correlated with local stoichiometry variations and other local defects. Typically, the FWHM values ranging from 8.3 arcsec to 14.7 arcsec were measured with the best crystal used in these measurements. Second, transmission white beam x-ray topography (WBXT) was performed by using a 22 mm×200 μm beam in the energy range of 50 keV to 200 keV. These types of measurements allowed for large area, high-resolution (50 μm) scans of the samples. Usually, this technique is used to visualize growth and process-induced defects, such as dislocations, twins, domains, inclusions, etc. the difference in contrast shows different parts of the crystal that could not be shown otherwise. In topography, good contrast is indicative of a high quality of the sample, while blurred gray shows the presence of defects. Correlation with other techniques (e.g., infrared (IR) mapping and gamma mapping) was also attempted. Our characterization techniques, which use highly penetrating x-rays, are valid for in-situ measurements, even after electrical contacts have been formed on the crystal in a working device. Thus, these studies may lead to understanding the effects of the defects on the device performance and ultimately to improving the quality of CZT material required for device fabrication. It is important to study crystals from different ingot positions (bottom, center, and top); consequently, more systematic studies involving scans from center to border are planned.     

汽车防撞毫米波雷达系统参数优化设计

通过分析汽车间相对速度和安全距离的关系,提出线性调频连续波(LFMCW)雷达距离和速度测量指标.根据测量范围及分辨率要求,制定了信号处理指标.分析了雷达前端工作参数与测量指标及信号处理技术参数间的制约关系.通过分析差拍频率和多普勒频率的范围及耦合关系,讨论了前端中心频率和调频频率应满足的关系.通过时频分析研究了测量分辨...