Structure and phase-composition of Ti-doped gas atomized Raney-type Ni catalyst precursor alloys

Raney-type Ni precursor alloys containing 75 at.% Al and doped with 0, 0.75, 1.5 and 3.0 at.% Ti have been produced by a gas atomization process. The resulting powders have been classified by size fraction with subsequent investigation by powder XRD, SEM and EDX analysis. The undoped powders contain, as expected, the phases Ni₂Al₃, NiAl₃ and an Al-eutectic. The Ti-doped powders contain an additional phase with the TiAl₃ DO₂₂ crystal structure. However, quantitative analysis of the XRD results indicate a far greater fraction of the TiAl₃ phase is present than could be accounted for by a simple mass balance on Ti. This appears to be a (Ti_xNi_1−x)Al₃ phase in which higher cooling rates favour small x (low Ti-site occupancy by Ti atoms). SEM and EDX analysis reveal that virtually all the available Ti is contained within the TiAl₃ phase, with negligible Ti dissolved in either the Ni₂Al₃ or NiAl₃ phases.     

Solidification morphology and phase selection in drop-tube processed Ni–Fe–Si intermetallics

Drop-tube processing was used to rapidly solidify droplets of Ni_64.7Fe₁₀Si_25.3 and Ni_59.7Fe₁₅Si_25.3 alloys. In the larger droplets, and therefore at low cooling rates, only two phases, γ-Ni₃₁Si₁₂ and β₁-Ni₃Si were observed. Conversely, in the smaller droplets, and therefore at higher cooling rates, the metastable phase Ni₂₅Si₉ was also observed. The critical cooling rate for the formation of Ni₂₅Si₉ was estimated as 5 × 10³ K s⁻¹. SEM and TEM analysis reveals three typical microstructures: (I) a regular structure, comprising single-phase γ-Ni₃₁Si₁₂ and a eutectic structure between γ-Ni₃₁Si₁₂ and β₁-Ni₃Si; (II) a refined lamellar structure with a lamellar spacing <50 nm comprising γ-Ni₃₁Si₁₂ and β₁-Ni₃Si; (III) an anomalous structure with a matrix of Ni₂₅Si₉ and only a very small proportion of a second, and as yet unidentified, phase. These results indicate that there is an extended stability field for Ni₂₅Si₉ in the Ni-rich part of the Ni–Fe–Si ternary system in comparison to the Ni–Si binary system. With an increase of cooling rate, an increasing fraction of small droplets experience high undercoolings and, therefore, can be undercooled into the Ni₂₅Si₉ stability field forming droplets consisting of only the anomalous structure (III). The Fe atoms are found to occupy different substitutional sites in different phase, i.e. Fe substitutes for Ni in the γ phase and Si in the L1₂ (β₁) phase respectively.     

数字电视用户管理系统

课题实现了数字电视用户管理系统的设计与开发,以Oracle数据库作为后台数据库,以C Builder 6作为前台开发工具,包括表的设计与界面的设计.实现了数字电视用户管理系统基本功能,基本上满足了实际商业运营的需要.     

JFC磷酸酯的合成和应用

详述了JFC磷酸酯的合成工艺路线，以及它在织物前处理精练工艺中的应用。与其它磷酸酯类精练剂性能对比，证明它可作为一种性能优良的精练剂中的添加剂。     

黄河黑山峡河段大柳树水库比小观音水库原始库容多40亿m3的作用

一级开发大柳树高坝原始库容比二级开发小观音高坝多 4 0亿m3 ,库容大带来的好处体现在 5～ 7月可多向下游增供水量 ,缓解下游河道断流 ;延长泄放清水时间 ;增加发电效益 ;满足宁蒙河段防凌要求 ;增加汛期集中泄水 ,减缓下游河道淤积萎缩 ;满足南水北调西线工程水量调节要求等。为了更好优化配置黄河水资源 ,从全局和长远利益考虑 ,应采用一级开发方案 ,修建大柳树高坝大库     

高温皂碱练与酶制剂练精干绵性能比较

通过测试比较，分析了酶制剂练、高温皂碱练由精练方法不同而造成纤维在微观、外观、机械、吸湿及电学等方面的异同点。提出酶制剂练对提高纤维梳折、提高成纱品质、提高劳动生产率、降低工人劳动强度等方面均优于高温皂碱练，是精练工程改造方向之一。     

激光结晶a-Si:H SOI离子注入和快速退火

本文对激光结晶a-Si∶H SOI结构砷注入和快速退火行为作了研究.a-Si∶H激光结晶有Lp-LCR,OD,FCR-2,FCR-1四个结晶区.用剖面电镜观察了结晶区的结构.扩展电阻测量表明Lp-LCR区中有两种扩散机制,即杂质在晶粒体内扩散和沿缺陷扩散.OD区中有三种扩散形式,除有上述两种以外,还有沿缺陷的扩散.首次比较了沿晶界和缺陷的扩散速度.     

An automatic method for controlling the centre of gravity of a model

In many applications the location of the centre of gravity of a mechanical part is an important factor that a designer must consider. If it is not in a desired location, a part might not work properly, e.g. unbalanced force might be generated in a rotational part. After a part is modeled, its centre of gravity cannot be altered unless its external shape or internal mass distribution is changed. However, the external shape is usually constrained by other design considerations. In this paper, an algorithm is proposed for controlling the centre of gravity of a hollowed part. Using this algorithm, the location of the centre of gravity of a part is controlled by changing its internal mass distribution.     

用离子束混合及快速热处理方法形成钽的硅化物

本文描述用离子束透过钽金属膜进行混合和快速热处理方法来形成钽的硅化物.用溅射方法在P型硅衬底上淀积一层金属钽,然后用砷离子束透过钽金属模进行混合,采用快速热处理后形成了平整的硅化钽薄层.使用厚度为500埃的钽金属膜,得到钽的硅化物薄层电阻为5.5Ω/□.研究了砷离子能量、剂量及钽膜厚度对钽的硅化物薄层电阻的影响.用透射电镜和台阶仪对所形成的硅化钽进行了分析和厚度测量.     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.