Improving narrow bandgap a-SiGe:H alloys grown by hot-wire chemical vapor deposition

We have improved the electronic properties of narrow-bandgap (Tauc gap below 1.5 eV) amorphous-silicon germanium alloys (a-SiGe:H) grown by hot-wire chemical vapor deposition (HWCVD) by lowering the substrate temperature and deposition rate. Prior to this work, we were unable to grow a-SiGe:H alloys with bandgaps below 1.5 eV that had photo-to-dark conductivity ratios comparable with our plasma-enhanced CVD (PECVD) grown materials [B.P. Nelson et al., Mater. Res. Soc. Symp. 507 (1998) 447]. Decreasing the filament diameter from our standard configuration of 0.5 mm to 0.38 or 0.25 mm provides first big improvements in the photoresponse of these alloys. Lowering the substrate temperature from our previous optimal temperatures (T_sub starting at 435 °C) to at 250 °C provides additional photo-to-dark conductivity ratio increasing by two orders of magnitude for growth conditions containing 20–30% GeH₄ in the gas phase (relative to the total GeH₄+SiH₄ flow).     

基于光子带隙(PBG)结构的小型K波段谐振式带通滤波器

提出了一种新的基于光子带隙结构的K波段谐振式带通滤波器，给出了近似设计公式，并在半导体衬底上，采用微电子的工艺实现了这种结构。这种滤波器设计方法简单，体积小，整个长度接近谐振频率上的导波波长，加工方便，便于与其他电路集成，带内损耗小，阻带范围宽，带外抑制高。另外，本文的理论分析和实验结果均基于半导体衬底，可以直接应用于微波集成电路中。理论模拟与实际测量值基本吻合。     

BPxN1-x薄膜的制备及磷元素对其光学能隙的影响

本文从应用出发，选择光学石英为衬底，采用热丝辅助射频化学气相沉积的方法沉积BPxN1—x薄膜，对样品进行了X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外—可见等测试。XRD、SEM结果显示薄膜多晶态，表面形貌随时间变化，最终为胞状；紫外—可见光光谱结果显示BPxN1—x薄膜的紫外吸收边随沉积时间的加长、PH3流量的增加而向长波长方向移动。因此，该材料的光学能隙可以通过生长工艺适当调整。另外，BPxN1—x薄膜与液晶层能较好匹配等特性更使其适用于紫外空间光调制器。     

一种新型微带光子带隙结构的优化设计

本文对一种渐变尺寸的新型光子带隙结构进行了优化设计。根据优化后得出的最优结构参数 ,设计出PBG结构。实验结果证明 ,这种优化后的新型结构可以在保持阻带抑制幅度的同时减小通带内的波纹     

Design of a low temperature coefficient bandgap reference with a wide temperature range

In order to meet the requirements of different applications and markets for the accuracy and reliability of IoT chips,a low temperature coefficient bandgap reference with a wide temperature range is proposed.On the basis of the traditional Banba bandgap reference structure,the circuit utilizes high-order temperature compensation technology and piecewise temperature compensation technology to improve the curvature of the output reference voltage.The temperature coefficient of the circuit is reduced.At the same time,the operating temperature range of the circuit is extended.The circuit performances are verified in the TSMC 180 nm CMOS process.Test results show that the temperature coefficient of the circuit is as low as 7.2×10^-6/℃ in the range of-40 ℃ to 160 ℃.The power supply rejection ratio at a low frequency is -48.52 dB.The static current under the 1.8 V power supply voltage is 68.38 μA,and the core area of the chip is 0.025 mm².     

溶胶-凝胶法制备掺镧钛酸钡薄膜及其光学性质研究

以硝酸镧、醋酸钡、钛酸四丁酯为原料,采用溶胶一凝胶旋涂法制备掺La的钛酸钡薄膜,研究薄膜的晶体结构、表面形貌、紫外-可见光吸收性能及光学带隙。研究结果表明,纯钛酸钡和掺La钛酸钡薄膜均为单一四方钙钛矿结构,La3＋的引入可以使钛酸钡薄膜在可见光区的透过率和光学带隙有一定程度下降,而退火温度对掺镧钛酸钡薄膜光学带隙基本无...     

一种抑制同步开关噪声的微波光子晶体结构

为了确保抑制高速电路中同步开关噪声(SSN)的微波光子晶体(EBG)结构在兼顾带隙特性的同时,还具有良好的信号完整性,采用枝条绕转单元贴片的方法设计出一种新型EBG结构。利用HFSS软件对新型EBG结构抑制SSN的特性进行建模仿真,并制备刻蚀有新型EBG结构的4层印制电路板,用安捷伦矢量网络分析仪对其禁带特性进行测试,实验结果与仿真结果吻合良好。通过眼图对新型EBG结构进行的仿真分析显示,新结构的信号完整性良好。     

Isolation enhancement between tightly spaced compact unidirectional patch‐antennas on multilayer EBG surfaces

In this article, ultracompact unidirectional patch antennas are used in different two‐antenna systems for biomedical applications at 5.2 GHz. Multilayer mushroom type electromagnetic bandgap (EBG) structures are designed as slow‐wave medium to reduce the size of the individual patch antennas to 0.1λ₀ by 0.18λ₀. Various techniques are investigated herein to improve antenna isolation for an enhanced Multiple‐Input Multiple‐Output (MIMO) performance. First, the coupling between 0.3λ₀‐spaced antennas is verified to occur dominantly through radiation and near‐field coupling between the patches rather than through substrate‐bound modes. Second, various configurations are proposed to suppress antenna coupling. These approaches include reorientation of the antennas and employment of parasitic radiators between the patches. A novel design is presented in which a unidirectional parasitic slot radiator on an EBG reflector is inserted between the antennas to decouple them. Measurement results confirm efficacy of these approaches in mitigating antenna coupling by more than 11 dB in the operating bandwidth of the antennas. The compact patch antennas maintain efficiency values of higher than 70%. © 2014 Wiley Periodicals, Inc. Int J RF and Microwave CAE 25:30–38, 2015.     

A 2.20 eV Bandgap Polymer Donor for Efficient Colorful Semitransparent Organic Solar Cells

Semitransparent organic solar cells (ST-OSCs) have attracted increasing attention due to their promising prospect in building-integrated photovoltaics. Generally, efficient ST-OSCs with good average visible transmittance (AVT) can be realized by developing active layer materials with light absorption far from the visible light range. Herein, the development of ultrawide bandgap polymer donors with near-ultraviolet absorption, paired with near-infrared acceptors, is proposed to achieve high-performance ST-OSCs. The key points for the design of ultrawide bandgap polymers include constructing donor–donor type conjugated skeleton, suppressing the quinoidal resonance effect, and minimizing the twist of conjugated skeleton via noncovalent conformational locks. As a proof of concept, a polymer named PBOF with an optical bandgap of 2.20 eV is synthesized, which exhibited largely reduced overlap with the human eye photopic response spectrum and afforded a power conversion efficiency (PCE) of 16.40% in opaque device. As a result, ST-OSCs with a PCE over 10% and an AVT over 30% are achieved without optical modulation. Moreover, colorful ST-OSCs with visual aesthetics can be achieved by tuning the donor/acceptor weight ratio in active layer benefiting from the ultrawide bandgap nature of PBOF. This study demonstrates the great potential of ultrawide bandgap polymers for efficient colorful ST-OSCs.