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We discuss specific features of Te-based compounds that made them the best materials for the phase-change data storage. It is demonstrated that the phase-change recording is due to a switch of Ge atoms between octahedral and tetrahedral symmetry positions within the Te face-centered cubic lattice. It is this nature of the transition that makes the Te-based media fast and stable. The driving force for this transition is also discussed. The chapter is concluded by introduction of a concept of the super-resolution near-field structure (super-RENS) disc that allows to reduce a bit size well below the diffraction limit and makes 100 GB/disc storage a reality. 相似文献
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Labouvie-Vief Gisela; Lumley Mark A.; Jain Elizabeth; Heinze Hillary 《Canadian Metallurgical Quarterly》2003,3(2):115
This research reports age and gender differences in cardiac reactivity and subjective responses to the induction of autobiographical memories related to anger, fear, sadness, and happiness. Heart rate (HR) and subjective state were assessed at baseline and after the induction of each emotion in 113 individuals (61 men, 52 women; 66% European American, 34% African American) ranging in age from 15 to 88 years (M = 50.0; SD = 20.2). Cardiac reactivity was lower in older individuals; however, for anger and fear, these age effects were significantly more pronounced for the women than the men. There were no gender differences in subjective responses, however, suggesting that the lower cardiac reactivity found among older people is dependent on gender and the specific emotion assessed. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
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D. Mangelinck P. Gas T. Badche E. Taing F. Nemouchi C. Perrin-Pellegrino M. Vuaroqueaux S. Niel P. Fornara J. M. Mirabel L. Fares P. H. Albarede 《Microelectronic Engineering》2003,70(2-4):220-225
The formation of Ti silicides has been examined in flash memories with 0.25 μm linewidth by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. It has been observed that, after the first rapid thermal process and the selective metal etch, there is no silicide on the source and on a majority of drain contacts while C49-TiSi2 is found on the gate. A pre-amorphisation implant increases drastically the formation of C49-TiSi2 in the drain zone while modifications of annealing conditions have little impact. These results indicate that the formation of C49-TiSi2 is most likely controlled by nucleation and that this nucleation is sensitive to both the width and the length of the reaction zone. The formation of a Ti rich silicide may play an important role in this nucleation by decreasing the driving force for the formation of C49-TiSi2. Curiously enough, the formation of C49-TiSi2 appears thus as a major concern for the salicide process in flash memories. 相似文献
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In Part 1 of this two-part series, we introduced Katamic memory—a neural network architecture capable of robust sequence learning and recognition. In Part 2, we introduce the Blobs World taskjdomain for language learning and describe the DETE language learning system, which is composed of over 50 Katamic memory modules. DETE currently learns small subsets of English and Spanish via association with perceptual! motor inputs. In addition to Kaiamic memory, DETE employs several other novel features: (1) use of feature planes, to encode visual shapes, spatial relationships and the motions of objects, (2) phase-locking of neural firing, in order to represent focus of atention and to bind objects across multiple feature planes, and (3) a method for encoding temporal relationships, so that DETE can learn utterances involving the immediate past and future. We compare DETE to related models and discuss the implications of this approach for language-learning research. 相似文献
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银河仿真Ⅱ型机YH-F2是高性能的全数字仿真计算机,处理机间通讯是YH-F2采用的关键技术之一。本文分三个部分介绍了YH-F2的处理机间通讯:①处理机通讯指令,③处理机间数据传输,③I/O处理机IOP与通讯控制处理机CCP之间的通讯。 相似文献
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介绍了αβ运算符的定义和αβ联想记忆矩阵的四种操作。通过四种矩阵操作来实现模式对的培训和回忆。αβ多层联想记忆模型相比形态学联想记忆模型数值计算相对容易。最后,通过αβ多层联想记忆的数字模拟实例验证了αβ多层联想记忆具有良好的回忆性能。 相似文献
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Flexible Nonvolatile Transistor Memory with Solution‐Processed Transition Metal Dichalcogenides
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Richard Hahnkee Kim Jinseong Lee Kang Lib Kim Suk Man Cho Dong Ha Kim Cheolmin Park 《Small (Weinheim an der Bergstrasse, Germany)》2017,13(20)
Nonvolatile field‐effect transistor (FET) memories containing transition metal dichalcogenide (TMD) nanosheets have been recently developed with great interest by utilizing some of the intriguing photoelectronic properties of TMDs. The TMD nanosheets are, however, employed as semiconducting channels in most of the memories, and only a few works address their function as floating gates. Here, a floating‐gate organic‐FET memory with an all‐in‐one floating‐gate/tunneling layer of the solution‐processed TMD nanosheets is demonstrated. Molybdenum disulfide (MoS2) is efficiently liquid‐exfoliated by amine‐terminated polystyrene with a controlled amount of MoS2 nanosheets in an all‐in‐one floating‐gate/tunneling layer, allowing for systematic investigation of concentration‐dependent charge‐trapping and detrapping properties of MoS2 nanosheets. At an optimized condition, the nonvolatile memory exhibits memory performances with an ON/OFF ratio greater than 104, a program/erase endurance cycle over 400 times, and data retention longer than 7 × 103 s. All‐in‐one floating‐gate/tunneling layers containing molybdenum diselenide and tungsten disulfide are also developed. Furthermore, a mechanically‐flexible TMD memory on a plastic substrate shows a performance comparable with that on a hard substrate, and the memory properties are rarely altered after outer‐bending events over 500 times at the bending radius of 4.0 mm. 相似文献
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