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采用超高真空电子束蒸发法制备了新型高 K栅介质-非晶 ZrO2薄膜. X射线光电子能谱 (XPS) 中 Zr3d5/2 和 Zr3d3/2 对应的结合能分别为 182.1eV和 184.3eV, Zr元素的主要存在形式为 Zr4+,说明薄膜由完全氧化的 ZrO2组成 ,并且纵向分布均一.扩展电阻法( SRP)显示 ZrO2薄膜的 电阻率在 108Ω@ cm以上,通过高分辨率透射电镜( HR- XTEM)可以观察 ZrO2/Si界面陡直,没有 界面反应产物 ,证明 600℃快速退火后 ZrO2薄膜是非晶结构.原子力显微镜( AFM)表征了薄膜的 表面粗糙度,所有样品表面都很平整,其中 600℃快速退火样品 (RTA)的 RMS为 0.480nm. 相似文献
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Removal of gold from basic solutions containing [Au(CN)2]? has been demonstrated using the inherently conducting polymer polypyrrole. Polymers containing sulfonated aromatic dopants have been found to display a significant ability to remove gold from such solutions. Experiments performed in solutions containing both gold and copper cyanide complexes indicate that the recovery process is not highly selective. However, the polypyrroles used display significantly faster rates of gold recovery than activated carbon. © 2003 Society of Chemical Industry 相似文献
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M. Benkerri R. Halimi A. Bouabellou N. Benouattas 《Materials Science in Semiconductor Processing》2004,7(4-6):319
In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 Å thicknesses are thermally evaporated on Si(1 1 1) substrates, part of them had previously been implanted with antimony ions of 5×1014 or 5×1015 at. cm−2 doses. The samples are heat-treated in vacuum at temperatures in the range 200–700 °C for various times. The results show the growth and formation of Cu3Si and Cu4Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb+ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu4Si phase whereas the Cu3Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed. 相似文献
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碳黑对苯乙烯自由基聚合反应影响的研究 总被引:1,自引:0,他引:1
研究了碳黑对苯乙烯单体聚合物反应的影响,结果表明,用过氧化苯甲酰作引发剂,普通碳黑子对苯乙烯的聚合有强烈的阻聚作用,而用偶氮二异丁腈引发聚合物时,普通碳黑的阻聚性很小,当时碳黑进行接枝处理后,接枝碳黑对苯乙烯自由基聚合的影响程度与接枝方法有关,其中过氧化苯甲酰 自由基枝枝碳黑的聚性变化较大。 相似文献
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Nitric oxide reduction and carbon monoxide oxidation over carbon-supported copper-chromium catalysts 总被引:1,自引:0,他引:1
S. Stegenga R. van Soest F. Kapteijn J. A. Moulijn 《Applied catalysis. B, Environmental》1993,2(4):257-275
Carbon supported copper-chromium catalysts are shown to be very active for both the reduction of nitric oxide with carbon monoxide and the oxidation of carbon monoxide with oxygen. Mixed copper-chromium oxide active phases have good activity in the simultaneous removal of nitric oxide and carbon monoxide from exhaust gases. The influence of several catalyst variables has been investigated. The activity per volume of catalyst increases with increasing loading, while the intrinsic activity shows a maximum around C/M=100−50. An optimum catalyst for nitric oxide reduction and carbon monoxide oxidation has a copper/chromium ratio of 2/1. The apparent activation energy for the carbon monoxide oxidation over carbon supported copper-chromium catalysts is 77 kJ/mol, suggesting that the Cu---O bond rupture is the rate-limiting process. The reduction of nitric oxide takes place at higher temperatures. Since all catalysts have a low selectivity for molecular nitrogen formation at lower temperatures, the dissociation of nitric oxide is probably rate determining, resulting in a slightly reduced catalyst system. In an excess of carbon monoxide the reaction is first-order in nitric oxide and zero-order in carbon monoxide. Moisture inhibits the reaction by reversible competitive adsorption, whereas carbon dioxide does not. Oxygen completely inhibits the reduction of nitric oxide due to the more rapid reoxidation of the catalytic sites compared to nitric oxide. Therefore, the reduction of nitric oxide takes place only when all oxygen has been converted and, hence, is shifted to higher temperatures. As a possible consequence, the production of nitrous oxide is reduced. Nitric oxide and molecular oxygen react preferentially with carbon monoxide, so, in an excess of oxidizing component, gasification of the carbon support occurs at higher temperatures after carbon monoxide has been completely consumed. 相似文献
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Incorporation of silicon species from an alloy substrate into anodic titania is shown to stabilise the structure of the film, facilitating investigation of the ionic transport processes in amorphous titania grown at high efficiency. Thus, an amorphous anodic film developed on a sputtering-deposited Ti-6 at.%Si alloy formed to 100 V in phosphoric acid electrolyte in contrast to a partially crystalline film developed on relatively pure titanium at <20 V. Silicon species, which are immobile and act as marker species in the growing film, are present in the inner 58% of the film thickness. Evidently, the film material forms simultaneously at the film/electrolyte and alloy/film interfaces by co-operative transport of cations and anions, as is usual in amorphous anodic oxides. The phosphate anions incorporated from the electrolyte migrate inward at 0.34 times the rate of O2− ions and hence are present in the outer 62% of the film thickness. 相似文献
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We present uniaxial tensile test results for 30–50 nm thick freestanding aluminum films. Young’s modulus and ductility were found to decrease monotonically with grain size. Reverse Hall–Petch behavior was observed with no appreciable room temperature creep. Non-linear elasticity with small irreversible deformation was observed for 50 nm thick specimens. 相似文献