电荷灵敏放大器不用反馈高值电阻的新方法

本文提出了一种电荷灵敏放大器不用反馈高值电阻的新方法。对这种方法作了电路分析以及对实际电路的测量结果作了介绍。     

Heat loss and thermoelectric generator design

With the object of evaluating its importance to thermoelectric generator design, heat loss is introduced into the standard thermoelectric generator design theory. The theory for both the constant hot and cold junction temperatures model and the constant heat input model are so modified. The modification is first order and, therefore, is limited to small leg heat-transfer coefficients. Numerical results using representative properties show that significant differences can exist between the optimum geometry and performance of a generator idealized as lossless and those of a generator designed by the modified theory. The largest differences occur with the constant heat input model.     

Analysis of junction temperatures in high-power GaN-based LEDs

We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based light-emitting diode (LED) packages. A numerical study was carried out with parametric model to understand the junction temperature variation due to bonding medium defects. Transient thermal measurement was performed to evaluate LED’s junction temperature. Thermal resistance from chip to lead frame was 20 K/W in our sample LED. It was suggested that only 60% of the surface area of the bonding medium was involved...     

半导体照明中结温的电学法测试与优化

基于电学法测试半导体照明的结温,实现了结温测试的电路,采用脉冲调制对LED的瞬态结温值进行测试.实脸发现,结温与正向电压的标定系数K值是影响结温测试精度的主要因素,分析了产生误差的主要原因,并对该系数进行修正.测试结果表明:结温的实测值与参考值有良好的一致性,存在误差的原因是采样的延时时间较长,可提高数据采样率和剔除不...     

全固态裸露式Ag／AgCl参比电极的研制及应用

该文报道了一种树脂接界全固态裸露式Ag／Agcl参比电极,勿需电镀氯化,制备工艺简单,性能稳定,是对电解型Ag／AgCl参比电极的一大改进。可代替饱和甘汞电极作为通用型参比电极,同时可减少汞对环境所造成的二次污染,在温度大于75℃时仍能保持良好性能,突破了甘汞电极的局限。     

Wideband turnstile junction coaxial waveguide orthomode transducer

A wideband turnstile junction coaxial waveguide orthomode transducer (OMT) is presented in this paper, featuring coaxial waveguide input and orthogonal rectangular waveguide outputs. It primarily comprises of a turnstile junction, bending stepped impedance transformers and power combiners. The symmetrical geometry helps achieve wide operating bandwidth and balanced output phases. The OMT covers the whole Ku band from 12 to 18 GHz, which aims at wideband dual‐polarized signal combination and separation within coaxial‐type multi‐band antenna systems. An experimental prototype is manufactured and the measured results confirm that the reflection coefficient is lower than ?15 dB within the whole band, and the port isolation is better than 35 dB. Turnstile junction coaxial waveguide OMTs can be adopted widely in circular/coaxial waveguide hybrid feeding networks for multi‐band satellite communication/remote sensing antenna systems.     

基于光照强度的PIN光电二极管响应时间分析

在PIN光电二极管应用中发现,光照强度对响应速度具有很大影响.论文研究了光强对响应速度的影响,提出了内部PIN结等效电场模型,并搭建了实验电路对PIN光电二极管在不同光照强度下的响应速度进行检测,验证提出的结模型,很好的解释了光电二极管从无光照到有光照这一过程中,光强越强,响应时间越短;而当光电二极管从有光照到无光照这一过程中,光强越强,响应时间越长这一现象.提出的模型和实验验证为光电二极管在响应速度要求较高的系统中的应用提供了理论分析依据,也为进一步提高PIN光电二极管的速度提出了有益的探索.     

HSV-tk基因/GCV系统治疗肿瘤的旁观者效应与缝隙连接关系的研究

目的 探讨单纯疱疹病毒胸苷激酶（HSV－tk）基因／丙氧鸟苷（GCV）系统杀伤肿瘤细胞时旁观者效应与细胞间缝隙连接的关系。方法 用PA317细胞包装STK质粒（逆转录病毒载体介导的HSV-tk基因），形成假逆转录病毒颗粒，转染有缝隙连接的大鼠胶质瘤细胞C6和无缝隙连接的入宫颈癌细胞 Hela，制成 C6 tk+和 Helatk+细胞，将不同比例的C6和 C6 tk+、Hela和 Hela tk+细胞混合，每种比例8孔，培养 24h后 4孔加入含0．5μg/mlGCV的培养基，4孔作对照，6d后用MTT法测量细胞存活率。在两个培养皿中放入周围粘有33mm高滤纸的载玻片，分别接种 C6、C6 tk+细胞。细胞 80%汇合后将载玻片互换，并加入含0．5μg/ml GCV的培养基，6d后观察细胞形态。结果C6细胞组存在旁观者效应，Heal细胞组不存在旁观者效应。培养皿中tk+细胞大部分被杀死,tk-细胞无变化。结论HSV-tk基因/GCV系统杀伤肿瘤细胞时旁观者效应与细胞间缝隙连接有关。     

校园网格环境构建的关键技术研究

网格计算是新型分布式计算技术。网格是一个集成的计算与资源环境,它能够充分吸纳各种计算资源并将它们转化成一种方便可靠的计算能力。文中论述了网格计算的特点和体系结构及其与传统分布式计算的区别,进而分析了校园网格环境构建的关键技术。校园网格环境的构建是网格普及化必经的关键一步。在校园网格系统构建中除了文中提到的关键技术之外还有诸多问题如安全机制、资源管理、任务管理、通信技术等都有待于进一步研究和具体化。     

Electrical Properties and Electroluminescence of 4H-SiC p-n Junction Diodes

Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001 ) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal aircooled quartz tube at around 1500 ℃and 1.33 × 104 Pa by employing SiH4 C2H4 H2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm2 ·V -1 ·s -1 with a carrier concentration of ～ 1016 cm-3 and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 × 1021 cm-3 with a mobility of 0.75 cm2 ·V -1 ·S -1. SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Aldoped 4H-SiC substrates. The C-V characteristics of the diodes were linear in the 1/C3-V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 ℃, which provides a potential for high-temperature applications.