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1.
How to improve the sensitivity of the temperature-sensing luminescent materials is one of the most important objects currently. In this work, to obtain high sensitivity and learn the corresponding mechanism, the rare earth (RE) ions doped Y4.67Si3O13 (YS) phosphors were developed by solid-state reaction. The phase purity, structure, morphology and luminescence characteristics were evaluated by XRD, TEM, emission spectra, etc. The change of the optical bandgaps between the host and RE-doped phosphors was found, agreeing with the calculation results based on density-functional theory. The temperature-dependence of the upconversion (UC) luminescence revealed that a linear relationship exists between the fluorescence intensity ratio of Ho3+ and temperature. The theoretical resolution was evaluated. High absolute (0.083 K−1) and relative (3.53% K−1 at 293 K) sensitivities have been gained in the YS:1%Ho3+, 10%Yb3+. The effect of the Yb3+ doping concentration and pump power on the sensitivities was discussed. The pump-power–dependence of the UC luminescence indicated the main mechanism for high sensitivities in the YS:1%Ho3+, 10%Yb3+. Moreover, the decay-lifetime based temperature sensing was also evaluated. The above results imply that the present phosphors could be promising candidates for temperature sensors, and the proposed strategies are instructive in exploring other new temperature sensing luminescent materials. 相似文献
2.
首次采用叠加能量离子注入技术制备C^+注入SiO2薄膜样品,室温下观测到很强的蓝光发射。通过测量样品的光致发光谱对退火条件的依赖关系,研究了样品的发光特性。对发光机制进行了初步探讨。 相似文献
3.
静压下ZnS:Te中Te等电子陷阱的发光 总被引:2,自引:2,他引:0
研究了4块ZnS:Te薄膜样品(Te组分从0.5%到3.1%)的光致发光谱在常压下的温度特性.对于Te组分较小的2块样品观察到2个发光峰,分别来自Te1和Te2等电子陷阱;而对Te组分较大的2块样品则只观察到1个来自Te2等电子陷阱的发光.我们还研究了这些发光峰在低温1.5K下的流体静压压力行为.观察到与Te1有关的发光峰压力系数比ZnS带边的要大很多,而与Te2有关的发光峰压力系数则比带边小.根据Koster-Slater模型,价带态密度半宽随压力的增加是Te1中心有较大压力系数的主要原因,而Te1和Te2中心的不同压力行为则是由于压力对两者缺陷势增强的不同效果引起的. 相似文献
4.
The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates
is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor.
The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties
and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow
is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is
higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature
hole mobility and hole concentration of 800 cm2 V−1 s−1 and 3·1016 cm-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence
spectrum is dominated by strong excitonic lines. 相似文献
5.
等离子体氧化nc-Si/SiO_2多层膜的蓝光发射 总被引:1,自引:0,他引:1
报道了在等离子体增强化学气相沉积 (PECVD)系统中用交替淀积 a-Si对其进行原位等离子体氧化的方法制备了 a-Si∶H/ Si O2 多层膜。随着 a-Si∶H子层的厚度从 3 .8nm减小到 1 .5 nm,a-Si∶H/ Si O2 多层膜的光吸收边和光致发光 (PL )出现了蓝移。在晶化的 a-Si∶ H/ Si O2 多层膜中不仅观察到室温下的红光带 (80 0nm)的发光峰 ,而且还观察到蓝光发射 (4 2 5 nm) ,结合 Raman,TEM和 PL测试 ,对其原因作了简单的分析 相似文献
6.
In this paper we discuss the different models proposed to explain the visible luminescence in porous silicon (PS). We review
our recent photoluminescence and Raman studies on PS as a function of different preparation conditions and isochronal thermal
annealing. Our results can be explained by a hybrid model which incorporates both nanostructures for quantum confinement and
silicon complexes (such as SiH
x
and siloxene) and defects at Si/SiO2 interfaces as luminescent centres. 相似文献
7.
As压对LT-GaAs/AlGaAs多量子阱光学特性的影响 总被引:2,自引:0,他引:2
在衬底温度为 3 5 0°C的条件下 ,用分子束外延的方法 ,在不同的砷压条件下生长了 Ga As/Al0 .3Ga0 .7As多量子阱结构。 77K的荧光实验证明 ,砷压对样品的光学特性影响显著。认为砷压对低温多量子阱光学特性的影响是点缺陷随砷压的演化和能级间相互补偿的共同结果。通过优化砷压 ,样品的荧光峰的半峰宽减小到 3 me V,这是到目前为止所报道过的最窄的低温多量子阱的荧光峰。相应的垂直场光折变器件的电吸收为 60 0 0 cm 相似文献
8.
The optical emission characteristics of biaxially compressed InAs
x
P1−
x
/InP strained single quantum well (QW) structures, with nominal compositionx=0.67, have been investigated using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. The highly
strained QWs exhibit intense and narrow PL in the 0.9–1.5 μm wavelength range, similar to the lattice-matched InGaAs(P)/InP
system. The 20 K PLE spectra exhibit well-resolved features attributed ton=1 heavy hole (E1H1) and light hole (E1L1) transitions in the 1.0–1.5 μm wavelength range. In addition, features attributed
to transitions betweenn=2 electrons and heavy holes (E2H2), and betweenn=1 electrons and unconfined holes (E1Hf), were observed. The energy splitting between the heavy-hole and light-hole bands
was found to be a sensitive measure of the band offsets in the system. The best prediction of this splitting was obtained
for a valence band offset of δE
V
∼0.25δE
G
. This value of band offset was in agreement with the energy position of the E1Hf transition. The observed transition energies
were also compared with the results of a finite square well model, taking into account the effects of strain, and the results
offer further support for the band offset assignment. This study indicates that the InAsP system may be advantageous for application
in strained-layer optoelectronic devices operating in the 1.3–1.6 μm wavelength range. 相似文献
9.
10.
掺富勒烯SiO2气凝胶的制备与发光性质研究 总被引:3,自引:0,他引:3
本文利用溶胶-凝胶工艺成功地将富勒烯掺入了SiO2气凝胶的纳米孔洞中,在Ar^+离子激光激发下,观察到了很强的可见光发射,对该现象作了初步的解释。 相似文献