连续运转的掺钛蓝宝石激光器

本文报导一种连续波氩离子激光泵浦的掺钛蓝宝石激光器。在氩离子激光功率(全谱线)为10.45瓦且仅用一组腔镜时,获得最大平均功率超过1000mW、调谐范围750～850nm的掺钛蓝宝石激光输出。     

The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire

This paper presents a comparative study of the properties of GaN grown by organometallic vapor phase epitaxy, using both a GaN and A1N buffer layer, as a function of sapphire orientation (c-plane vs a-plane). Results are presented for varying the thickness of the buffer layer, varying the growth temperature of the GaN film, and also varying the ammonia/trimethylgallium mass flow ratio. The electron Hall mobilities of GaN films grown on an A1N buffer layer were, in general, higher compared to films grown using a GaN buffer layer. In addition, growth on a-plane sapphire resulted in higher quality films (over a wider range of buffer thicknesses) than growth on c-plane sapphire. The room temperature electron mobilities were also found to be dependent on, not only the growth temperature, but also the ammonia/trimethylgallium mass flow ratio.     

可调谐的双波长钛宝石激光器

一台可调谐钛宝石激光器两个波长同时运转,在数ns以内同步,相对波长差最大可达55nm。观测到明显的两种波长激光的竞争和关联。由BBO实现了两波的和频与倍频。     

蓝宝石光纤温度传感器测温上限的瓶颈分析及解决方案

通过与热电偶、非接触式辐射测温仪的对比分析,指出基于黑体辐射原理的蓝宝石光纤温度传感器在某些特殊测温场合的不可替代性.介绍了国内蓝宝石光纤温度传感器的研究情况,分析制约其应用和发展的测温上限瓶颈,最后提出解决该问题的初步方案.实验证明该方案能够实现高达2 700℃的温度测量,1 000℃以上最大稳态误差不超过50℃.     

Formation mechanism of subtrenches on cone-shaped patterned sapphire substrate

In this paper, the cone-shaped patterned sapphire substrates (PSS) were etched by an inductively couple plasma with BCl 3 as the reacting gas. The influence of the operating pressure and the RF bias power on subtrenches of the cone-shaped PSS and the formation mechanism of subtrenches were investigated. The profiles of patterns were characterized by FESEM (field emission scanning electron microscope). It showed that the subtrench size varied with the operating pressure and the RF bias power. As the operatin...     

蓝宝石高温光纤压力传感器的设计与仿真

针对高温环境下压力测量需求,提出采用蓝宝石材料来构造适用于特殊环境下的光纤高温法珀压力传感器。基于圆形膜片压力敏感原理设计了传感器敏感单元结构尺寸,通过Comsol有限元软件建立了敏感单元模型,对敏感膜片的表面位移及应力分布情况进行了仿真,验证了传感器设计的可靠性;同时分析了传感器的温敏效应,结果表明随温度升高,传感器的灵敏度会增大,会对压力测量产生误差,约为1.51kPa/℃,上述结果为蓝宝石高温压力传感器的结构和性能优化设计提供了有效指导。     

蓝宝石晶片纳米级超光滑表面加工技术研究

本文提出以蓝宝石塑性磨削和化学机械抛光为主要手段，以原子力显微镜为主要检测工具，来制备满足光电子领域要求的纳米级超光滑蓝宝石晶片的新方法。在高刚性磨床上，用W7的金刚石砂轮以f=1μm／r进给量，实现了蓝宝石晶片的浅损伤塑性域磨削。配制了以SiO2溶胶为抛光料的监宝石晶片专用抛光液，稳定地获得了无损伤层的RMS小于0.2nm的超光滑蓝宝石晶片表面。GaN外延生长所需蓝宝石晶片的合理抛光参数是：SiO2的粒子直径为7nm、浓度为3％、pH=11、压力P=200Pa。     

固结磨料研磨单晶蓝宝石亚表面损伤的预测

目的 为了准确预测工件亚表面损伤，合理确定材料去除量，优化固结磨料研磨单晶蓝宝石的工艺参数。方法 针对固结磨料研磨特点和单晶蓝宝石特性，采用离散元模拟技术，建立单晶蓝宝石材料的离散元模型，仿真固结磨料对材料研磨的动态过程，分析载荷作用下材料单元颗粒间裂纹的产生和扩展规律，研究磨粒切入深度对亚表面损伤的影响，预测固结磨料研磨单晶蓝宝石亚表面裂纹的数量和深度，并借助化学腐蚀法验证预测结果。结果 采用粒度分别为W14、W28、W50、W65的金刚石固结磨料垫，其对应的研磨单晶蓝宝石亚表面损伤层深度预测值分别为3.75、5.28、7.62、10.92 μm，预测的裂纹数量分别为199、236、526、981条，对应的实验实测值分别为3.79、5.88、8.76、11.44 μm。固结磨料垫中的磨料粒径越大，单晶蓝宝石亚表面损伤层的深度越大，裂纹数量越密集。对比发现腐蚀实验的实测值和理论预测值基本一致，验证了预测结果模型的正确性。结论 采用离散元法可以快速有效地预测固结磨料研磨单晶蓝宝石亚表面损伤层的裂纹数量和深度，为研磨工艺参数的优化和后续抛光工艺参数的制定提供指导。     

Paving the Way for High-Performance UVB-LEDs Through Substrate-Dominated Strain-Modulation

AlGaN-based ultraviolet-B light-emitting diodes (UVB-LEDs) exhibit great potential in phototherapy, vitamin D3 synthesis promotion, plant growth regulation, and so on. However, subjected to the excess compressive strain induced by the large lattice mismatch between multiple quantum wells (MQWs) and AlN, UVB-LEDs that simultaneously satisfy the requirements of high light output power (LOP), low working voltage, and excellent stability are rarely reported. Here, a substrate-dominated strain-modulation strategy is proposed. By precisely manipulating the strain in AlN grown on nano-patterned sapphire substrate (NPSS) to a slightly tensile one, the compressive strain in the following Al_0.55Ga_0.45N underlayer and Al_0.28Ga_0.72N/Al_0.45Ga_0.55N MQWs is successfully suppressed. As a result, an outstanding UVB-LED with a peak wavelength at 303.6 nm is achieved. The 20 × 20 mil² UVB-LED chip shows a wall-plug efficiency (WPE) of 3.27% under a forward current of 20 mA and a high LOP of 57.2 mW with an extremely low voltage of 5.87 V under a forward current of 800 mA. It is more exciting that the LOP degradation is as low as 17% after 1000 h operation under a forward current density of 75 A cm⁻², showing excellent stability. The here-developed UVB-LED, with a high LOP and excellent reliability, will definitely promote the applications of AlGaN-based UVB-LEDs.     

山东蓝宝石的色源和改色研究

报道了山东蓝宝石的ＸＰＳ，ＳＩＭＳ的测试结果，基于成份分析，光谱测试数据及对改色处理结果的分析，作出了关于山东蓝宝石的色源解释。山东蓝－宝石含铁量明显偏高，Ｆｅ＾２＋－Ｔｉ＾４＋离子间的电荷转移及Ｆｅ＾２＋，Ｆｅ＾２＋离子对的电子跃迁这两种机制的迭加，是造成其色深，失透的基本