MOCVD生长薄膜材料制作半导体可饱和吸收镜

介绍了当前国际上流行的用半导体可饱和吸收镜来对固体激光器、光纤激光器和半导体激光器进行被动锁模的方法,阐述了半导体可饱和吸收镜用来作为被动锁模吸收体的原理,并介绍了如何利用金属有机气相淀积(MOCVD)技术生长各种波长激光器所需要的半导体可饱和吸收镜.     

用稳态反饱和吸收法测量C_（60）的激发态吸收截面

用准连续激光实现了Ｃ６０的稳态反饱和吸收，通过实验和理论计算的拟合，确定了Ｃ６０的三重第一激发态吸收截面。     

Nonlinear optical behavior of alkyne terminated phthalocyanines in solution and when embedded in polysulfone as thin films: Effects of aggregation

We report here for the first time, on the comparative studies of the photophysical and optical limiting behavior of our two novel phthalocyanines namely 2(3), 9(10), 16(17), 23(24)-tetrakis-(4-(5-methylhex-1-yn-3-yloxy)) phthalocyanines 2, and 2(3), 9(10), 16(17), 23(24)-tetrakis-(4-(5-methylhex-1-yn-3-yloxy)) phthalocyaninato zinc (II) (3) in solution and thin films. Nonlinear optical (NLO) properties of the samples in solution and contained in polysulfone (PSU) thin films were evaluated using Z-scan technique at 532 nm and 10 ns pulsed duration. Effects of aggregation and disaggregation on the NLO performance of metal-free phthalocyanine are reported in detail. Our findings showed that the prepared Pcs show larger nonlinear absorption coefficient and lower limiting thresholds when embedded in polysulfone films compared to in solutions. The values of nonlinear susceptibility and hyperpolarizability recorded for 3-PSU in this work are respectively, ∼2.09 × 10⁻⁸ esu and ∼1.02 × 10⁻²⁶ esu. These values are among the largest values reported for phthalocyanines and other macrocycles doped on polymer matrices.     

一种适合于宽负载条件运行的有限双极性软开关DC／DC变换器

研究了一种适合宽负载条件运行的有限双极性控制方法并配合饱和电感和隔直电容实现ZVZCS PWM的全桥变换器,分析了其工作过程及主开关器件实现ZVZCS的约束条件。最后通过具体的功率实验,验证了该控制方法在较宽负载范围条件下实现软开关的能力。     

Preparation ＆ Properties Research of Two Indium Phthalocyanine Materials

Two iodo（phthalocyainato） indium complexes were synthesized and mixed with polymer solution（PMMA/chloroform）to prepare iodo（phthalocyainato）indium/PMMA compound film materials on a glass slice by the method of dipping film.Two materials have typical B-band and Q-band absorption of Phthalocyanine compounds in the UV-Vis spectrum.The reverse saturable absorption experiments show that two materials have better reverse saturable absorption properties while they have higher linear transmissivity.In addition,the highest transmittance of visible light is over 70%（tetrakis（cumylphenoxy）phthalocyainate indium/OMMA compound film material）.The initial threshold is 127.1mJ/cm^2.The dynamic range is 1.43.It can be concluded that introduction of the substituted groups having bigger steric hindrance and conjugative effect in the Phthalocyanine ring may increase the reverse saturable absorption effect of the Phthalocyanine indium material.     

改进型零电压开关PWM三电平直流变换器

介绍了一种带输出饱和电感的移相零电压开关PWM三电平直流变换器，与传统的零电压三电平比较，它具有较宽负载范围内实现零电压软开关、减小次级占空比丢失、减小输出二极管的寄生振荡及电压尖峰等特点。实验样机表明，该电路整机效率高，易于实现中大功率DC／DC变换。     

电网电瓷外绝缘污秽等级的确定

综合分析了确定污秽等级的三要素，重点研究了以等值附盐密度作为定量参数存在的问题，并提出防污闪的根本措施是根据饱和盐密值确定泄漏比距，最后探讨了应用局部表面电导法作为定量参数进行污秽等级划分的优越性。     

A compact spark pre-ionized pulser sustainer TE-CO<Subscript>2</Subscript> laser

A compact spark pre-ionized pulser sustainer TE-CO₂ laser that can produce an output energy of one joule with an overall efficiency of 12.4% is presented. Optical pulses have durations of 7.15 μs FWHM. Here, the laser uses all solid-state excitation (ASSE) circuit and the discharge formed between two uniform field electrodes placed 1.5 cm apart ultimately leads to a discharge volume of 50 cm × 1.5 cm × 1.5 cm     

磁滞回线测量方法与Simulink仿真分析研究

针对变压器磁滞回线间接测量存在的电路参数复杂和测量结果准确性难以评价等问题,通过对RC积分器测量方法的电路时域微分方程求解和Simulink仿真结果的分析,提出了一种确定电路参数的方法。借助Simulink饱和变压器的模型,仿真测量了在不同电压下饱和变压器磁滞回线图像,进一步画出了基本磁化曲线;通过对比基本磁化曲线测量值与Simulink中模型值的差异,结果显示利用该方法能仿真得到饱和变压器的磁滞回线,其测量误差可用电路参数估算和控制。根据该方法设计了测量电路,得到了实际变压器的磁滞回线,验证了该方法的正确性。研究结果表明,该方法揭示了RC积分法测量的电路参数,并能预测测量误差,具有准确性高的特点,为非线性饱和变压器磁滞回线测量电路参数设计提供了参考依据。     

A High Power Semiconductor Switch RSD for Pulsed Power Applications

High power switch is one of the most important components in pulsed power technology. The RSD （Reversely Switched Dynistor）, turned on by a thin layer of an electron-hole plasma, is a high power semiconductor switch. In this study, the RSD turn-on conditions were investigated by numerical analysis and device simulation as well as the experiments conducted to validate the turn-on conditions. A design of a triggering high-voltage RSD is presented based on a saturable transformer.