新型体声波传感器读出电路的实验验证

为了实验验证此前通过仿真验证的基于六端口反射计的新型BAW传感器读出电路的方案的可行性,本文制作了新型BAW传感器读出电路并对其进行了测试.以串联谐振频率约为1.5 GHz的薄膜体声波谐振器(FBAR)为待测器件(DUT),设计、制作了一种能够满足该FBAR谐振频率测量带宽(1.3 GHz~1.7 GHz)要求的PCB上微带六端口网络和检波器,配合射频信号发生器和示波器,获得了模拟DUT(50ΩSMA匹配负载)的反射系数-频率(Γ-f)曲线测量结果.与矢量网络分析仪(VNA)的测量结果进行了对比,两者吻合较好,实验验证了"基于六端口反射计的BAW传感器读出电路"可用于FBAR谐振频率的测量.本文工作对实用化BAW传感器的研制和片上矢量网络分析仪(VNA-on-Chip)的设计都有借鉴意义.     

光寻址电位传感器及其应用

光寻址电位传感器(LAPS)是一种基于半导体光电效应的化学传感器,在稳定性、重复性、灵敏度、准确性和响应速度等方面具有优良的性能。介绍了LAPS的基本原理和测量方法,阐述了LAPS在细胞传感器、图像传感器、金属离子敏感薄膜传感器、气体传感器及生物医学领域中的应用,并对其存在问题和研究方向进行了总结和展望。     

用于无创检测皮下葡萄糖的新型生物传感器研究

以无创检测人体血糖为应用需求,采用高灵敏度锇氧化还原聚合物修饰在薄膜电极上,并通过戊二醛交联法固定酶分子制备成新型生物传感器。实验结果表明:在0~700μmol/L的葡萄糖标准浓度范围内,传感器灵敏度为23.955 nA/(μmol.L-1),最低检测限为0.3μmol/L,相关系数为0.999;在标准皮下葡萄糖浓度0~19mmol/L浓度范围内,被抽取出的葡萄糖电流响应值与皮下葡萄糖的浓度成线性关系,线性相关系数为0.994,灵敏度为4.03 nA/(mmol.L-1);单只传感器对100μmol/L葡萄糖检测的精度为4.07%(n=10),不同传感器之间对100μmol/L葡萄糖测量的精度为3.22%(n=10),在4℃条件下,传感器的寿命可达450 d。     

Origin of Hole-Trapping States in Solution-Processed Copper(I) Thiocyanate and Defect-Healing by I2 Doping

Solution-processed copper(I) thiocyanate (CuSCN) typically exhibits low crystallinity with short-range order; the defects result in a high density of trap states that limit the device's performance. Despite the extensive electronic applications of CuSCN, its defect properties are not understood in detail. Through X-ray absorption spectroscopy, pristine CuSCN prepared from the standard diethyl sulfide-based recipe is found to contain under-coordinated Cu atoms, pointing to the presence of SCN⁻ vacancies. A defect passivation strategy is introduced by adding solid I₂ to the processing solution. At small concentrations, the iodine is found to exist as I⁻ which can substitute for the missing SCN⁻ ligand, effectively healing the defective sites and restoring the coordination around Cu. Computational study results also verify this point. Applying I₂-doped CuSCN as a p-channel in thin-film transistors shows that the hole mobility increases by more than five times at the optimal doping concentration of 0.5 mol.%. Importantly, the on/off current ratio and the subthreshold characteristics also improve as the I₂ doping method leads to the defect-healing effect while avoiding the creation of detrimental impurity states. An analysis of the capacitance-voltage characteristics corroborates that the trap state density is reduced upon I₂ addition.     

Ultraviolet photodetectors and readout based on a-IGZO semiconductor technology

In this work, real-time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a-IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an all-enhancement a-IGZO thin-film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R , a low response time t _{R E S} , and a good noise equivalent power value NEP .     

Bending impact on the performance of a flexible Li4Ti5O12-based all-solid-state thin-film battery

The growing demand of flexible electronic devices is increasing the requirements of their power sources. The effect of bending in thin-film batteries is still not well understood. Here, we successfully developed a high active area flexible all-solid-state battery as a model system that consists of thin-film layers of Li₄Ti₅O₁₂, LiPON, and Lithium deposited on a novel flexible ceramic substrate. A systematic study on the bending state and performance of the battery is presented. The battery withstands bending radii of at least 14 mm achieving 70% of the theoretical capacity. Here, we reveal that convex bending has a positive effect on battery capacity showing an average increase of 5.5%, whereas concave bending decreases the capacity by 4% in contrast with recent studies. We show that the change in capacity upon bending may well be associated to the Li-ion diffusion kinetic change through the electrode when different external forces are applied. Finally, an encapsulation scheme is presented allowing sufficient bending of the device and operation for at least 500 cycles in air. The results are meant to improve the understanding of the phenomena present in thin-film batteries while undergoing bending rather than showing improvements in battery performance and lifetime.     

Quantitative characterization of nanoprecipitates in irradiated low-alloy steels: advances in the application of FEG-STEM quantitative microanalysis to real materials

The characterization of the solute-enriched features (clusters or nanoprecipitates in irradiated low-alloy steels) requires extremely high spatial and elemental resolution, previously necessitating analysis using atom probe field-ion microscopy. In this investigation, field-emission gun-scanning transmission electron microscope (FEG-STEM) quantitative energy dispersive X-ray (EDX) microanalysis (spectrum imaging) has been applied to the characterization of the irradiation-induced nanoprecipitates in a low-alloy forging steel. Refinements in the EDX data have been possible via the application of multivariate statistical analysis (MSA) to the spectrum images, resulting in significantly reduced noise in the images. Most importantly, MSA permitted the clear identification of other elements in these Ni-enriched nanoprecipitates—including Mn and Cu. The processed X-ray spectrum images also provided direct evidence of the preferential formation of these irradiation-induced features along pre-existing dislocations within the steel, as well as the formation of intragranular nanoprecipitates. This research has provided the first direct X-ray spectrum images of irradiation-induced nanoprecipitates in high Ni A508 Gr4N forging steel, and has demonstrated the significant improvements attainable though the application of MSA techniques to the spectrum images. These results independently confirmed the analyses of the Ni-enriched nanoprecipitates previously conducted by 3D-APFIM, with the performance of the FEG-STEM/EDX technique shown to be comparable to that of the 3D-APFIM technique.     

面向RF IC的片上铁氧体磁膜电感

采用集成工艺制作了片上铁氧体磁膜(Ni0.4Zn0.4Cu0.2Fe2O4,Y2.8Bi0.2Fe5O12和Co7ZrO9)射频微电感.铁氧体薄膜采用溶胶凝胶法制作,高频特性较好,适于片上电感的应用.对电感样品进行了测试和等效电路分析,结果表明,与无磁膜结构相对比,铁氧体磁膜电感显著增强了电感性能,是一种实现小尺寸、高性能片上RF IC电感的很有前景的途径.     

平面薄膜电感的研究与开发现状

为满足电子系统的表面贴装技术、微组装技术发展的需要，对器件片式化、小型化、微型化的要求越来越高。而电感作为电路的三大基础性元件之一，其片式化、薄膜化势在必行。本文就近几年国内外片式薄膜电感的发展研究状况做一综述。