金刚石/氮化铝发光器件

把金刚石和氮化铝这两种宽带隙半导体集成到同一器件中,将可能获得短波紫外发光二极管和激光二极管。只是集成这两种结构不相似的物质并不容易:氮化铝是纤锌矿结构,而金刚石是立方体组织。德国Munchen科技大学的研究人员采用离子诱导分子束外延法做到了这一点。将掺硅氮化铝薄膜放置在自然生长的掺金刚石基底上,形成双极二极管,可以激发2.7eV～4.8eV(442nm～250nm)范围的激光。为了将该器件改进为发光器件,研究人员将蒸发态钛铝与样品两端电阻接触。     

基于AFM的微结构加工实验研究

本文建立了微动工作台和原子力显微镜相结合的微加工系统，在该系统上采用金刚石针尖进行微加工实验，与SPI系统本身的刻划软件刻划出的图形进行了比较分析，得出这个系统适合微结构的加工；并给出了采用该方法加工的1111面及多边形面微结构；还分析了金刚石针尖几何角度及SPM和工作台的相关参数对加工的影响。     

Simulations of Temperature Field in HFCVD Diamond Films over Large Area

A three-dimensional model was developed to investigate the influence of various hot filaments parameters on substrate temperature fields that significantly affect the nucleation and growth of diamond films over large area by hot-filament chemical vapordeposition (HFCVD). Numerical simulated results indicated that substrate temperature varies as a function of hot filamentsnumber, radius, temperature, emissivity, the distance between filaments, and the distance between substrate and filamentsarrangement plane. When these filaments parameters were maintained at the optimal values, the homogeneous substrate temperature region of 76 mm×76 mm with the temperature fluctuation no more than 5% could be obtained by a 80 mm×80 mmhot filaments arrangement plane. Furthermore, the homogeneous region could be enlarged to 100 mm×100 mm under thecondition of supplementary hot filaments with appropriate parameters. All of these calculations provided the basis for speciallyoptimizing the hot filaments parameters to dep     

RF—PECVD制备类金刚石碳膜的沉积机理

本文综合评述了用射频率等体化学气相沉积法制备类金刚石碳膜过程中的等离子体化学反应和等离子体与材料表面反应机理的研究概况。