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排序方式: 共有1032条查询结果,搜索用时 328 毫秒
1.
《Ceramics International》2022,48(8):10852-10861
Carbon cloth was used as a flexible substrate for bismuth telluride (Bi2Te3) particles to provide flexibility and improve the overall thermoelectric performance. Bi2Te3 on carbon cloth (Bi2Te3/CC) was synthesized via a hydrothermal reaction with various reaction times. After over 12 h, the Bi2Te3 particles showed a clear hexagonal shape and were evenly adhered to the carbon cloth. Selenium (Se) atoms were doped into the Bi2Te3 structure to improve its thermoelectric performance. The electrical conductivity increased with increasing Se-dopant content until 40% Se was added. Moreover, the maximum power factor was 1300 μW/mK2 at 473 K for the 30% Se-doped sample. The carbon cloth substrate maintained its electrical resistivity and flexibility after 2000 bending cycles. A flexible thermoelectric generator (TEG) fabricated using the five pairs of 30% Se-doped sample showed an open-circuit voltage of 17.4 mV and maximum power output of 850 nW at temperature difference ΔT = 30 K. This work offers a promising approach for providing flexibility and improving the thermoelectric performance of inorganic thermoelectric materials for wearable device applications using flexible carbon cloth substrate for low temperature range application. 相似文献
2.
Qiqi Peng Xu Jiang Yifan Chen Wei Zhang Jun Jiang Anquan Jiang 《Ceramics International》2021,47(16):22753-22759
Large domain wall (DW) conductivity in an insulating ferroelectric plays an important role in the future nanosensors and nonvolatile memories. However, the wall current was usually too small to drive high-speed memory circuits and other agile nanodevices requiring high output-powers. Here, a large domain-wall current of 67.8 μA in a high on/off ratio of ~4460 was observed in an epitaxial Au/BiFeO3/SrRuO3 thin-film capacitor with the minimized oxygen vacancy concentration. The studies from read current-write voltage hysteresis loops and piezo-response force microscope images consistently showed remaining of partially unswitched domains after application of an opposite poling voltage that increased domain wall density and wall current greatly. A theoretical model was proposed to explain the large wall current. According to this model, the domain reversal occurs with the appearance of head-to-head and tail-to-tail 180° domain walls (DWs), resulting in the formation of highly conductive wall paths. As the applied voltage increased, the domain-wall number increased to enhance the on-state current, in agreement with the measurements of current-voltage curves. This work paves a way to modulate DW currents within epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors through the optimization of both oxygen vacancy and domain wall densities to achieve large output powers of modern domain-wall nanodevices. 相似文献
3.
N.A. Zhuk M.G. Krzhizhanovskaya N.A. Sekushin V.V. Kharton B.A. Makeev V.A. Belyy R.I. Korolev 《Ceramics International》2021,47(14):19424-19433
The solid solutions based on the pyrochlore-type system Bi2MgNb2-xTaxO9 were formed in the compositional range х = 0–2.0 (Bi1·6Mg0·8Nb1.6-tTatO7.2, t = 0–1.6). The Rietveld method was used to refine the structure for Bi2MgNb2-xTaxO9 (x = 0, 1.0, 2.0). The increasing tantalum content led to the slight decrease in the cubic unit cell parameters from 10.56934 (4) Å for x = 0 and 10.54607 (3) Å for x = 2 (sp.gr. Fd-3m:2). At the same time, tantalum additions suppressed grain growth in the pyrochlore ceramics during sintering and made it possible to obtain materials with an average grain size of 1–2 μm (Bi1·6Mg0·8Ta1·6O7.2). The increase in the Ta5+ concentration led to the decrease in the dielectric permeability from 104 (Bi1·6Mg0·8Nb1·6O7.2) to 20 (Bi1·6Mg0·8Ta1·6O7.2) at room temperature, while the dielectric loss tangent remained lower than 0.002, which is due to the small grain size and the high porosity of the samples. An increase in temperature has practically no effect on the values of the dielectric permittivity in the entire frequency range. The samples have weak through conductivity. The activation energies of electrical conductivity varied in the range of 0.84–1.00 eV, and the less tantalum, the lower the activation energy. The electrical properties of the samples at 200 Hz to 1 MHz are described by the simplest parallel scheme. 相似文献
4.
Pure phase of sillenite structure, Bi12TiO20, was directly synthesized using stoichiometric bismuth (III) nitrate pentahydrate and titanium glycolate by co-precipitation. The influence of pH on the structure of Bi12TiO20 was studied in the pH range of 3–10. The sillenite structure was characterized using XRD and FTIR. The photo-degradation reaction of 4-nitrophenol (4-NP) was used to study photocatalytic activity of Bi12TiO20 as a function of the preparation pH. The rate of decomposition was followed by UV-vis and TOC. The beginning concentration of 4-NP, 44 ppm, decreased to less than 1 ppm within 30 min for all prepared catalysts. It was found that the decomposition rate constant of Bi12TiO20 is six times higher than those of either TiO2 or Bi2O3 under the same conditions. 相似文献
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6.
K. O. Boltar I. D. Burlakov A. M. Filachev E. A. Klimanov V. P. Ponomarenko V. N. Solyakov V. I. Stafeev 《Optical Memory & Neural Networks》2007,16(4):234-247
The recent researches and technological developments of middle and long wavelength infrared HgCdTe photovoltaic detectors
are presented. Structure, topology, design and performance of HgCdTe photodiodes, silicon readout electronics, Focal Plane
Arrays both staring and time delay and integration types, thermal imagers are discussed. Negative differential conductance,
bistability and high frequency oscillations under background infrared radiation in HgCdTe photodiodes are reported. 相似文献
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本文用不同的测试技术和方法测定了锗酸铋(BGO)单晶的比热(300~800K)热膨胀系数(100~1100K)和导温系数(140~700K),进而导出了 BGO 单晶不同温度下的导热系数、定容比热、德拜温度和格虑内森数。本文还对 BGO 单晶热物理性质的变化规律作了理论解释。 相似文献
10.
本文研究了提拉法生长的硅酸铋晶体(BSO)的蚀像形貌,比较了{100},{110},{211},{111}面族的腐蚀像特征和腐蚀速度,并用周期性键链(PBC)的形貌理论分析了腐蚀形貌。通过蚀像形貌特征便可方便地进行晶体定向,准确地确定各族晶面之间的相对位置和极轴的方向等。 相似文献