化学气相沉积铜薄膜研究进展

本文综术了集成电路工艺的Cu布线中Cu薄膜化学气相沉积(CVD)的研究背景,详细介绍了CVD生长Cu金属薄膜的国内外研究进展及CVD对前趋物的要求,并对前趋物的一些物理、化学性质进行了总结,最后,对薄膜沉积的计算机摸拟作了简要介绍。     

金刚石薄膜异质外延的研究进展

主要介绍金刚石薄膜在Si上异质外延的研究状况。综述了外延金刚石薄膜的偏压形核 ,SiC过渡层的影响及一些实验参数对外延薄膜质量的影响等 ,并论述了发展方向     

Combination of coating and heat treatment processes

For a proper use of coated tools and components excellent coating properties as well as excellent substrate properties of the coating/substrate composite are necessary. A well known example is the load support of hard steel substrates for thin wear resistant coatings. Therefore coating processes must be combined with heat treatment processes of the substrates, whereby several practical processing constraints like order and compatibility of the applied treatment procedures must be considered. The combination of CVD-coating plus laser beam hardening is an example of a post coating heat treatment. Applications may be possible for large forming tools made of high alloyed tool steels, which nowadays are usually through hardened after CVD-coating. Laser beam hardening offers the possibility, to harden only the highly loaded edges of the tools. The advantages of this combination are short process time, less distortion and compressive residual stresses in the substrate surface. CVD-coatings can endure laser beam hardening with suitable parameters. The influence of CVD TiN-coated steel substrates and laser beam hardening parameters on microstructures and properties of coating/substrate compounds have been investigated. Special attention was paid to overlapping hardening zones, which may occur at the start and end points of a laser hardened track. In summary, the combination of coating and heat treatment processes show a high potential to produce coating/substrate compounds with excellent coating properties as well as excellent substrate properties.     

Hybrid gas-to-particle conversion and chemical vapor deposition for the production of porous alumina films

Porous alumina films can be found in a wide variety of materials, including filters, thermal insulation components, dielectrics, biomedical and catalyst supports, coatings and adsorbents. Production methods for these films are as equally diverse as their applications. In this work, a hybrid process based upon chemical vapor deposition and gas-to-particle conversion is presented as an alternative technique for producing porous alumina films, with the main advantages of solvent-free, low substrate-temperature operation. In this process, nanoparticles were produced in the vapor phase by reaction of aluminum acetylacetonate in the presence of oxygen. Downstream of this reaction zone, these nanoparticles were collected via thermophoresis onto a cooled substrate, forming a porous film. Some deposited films were subjected to post-processing in the form of annealing in air. Fourier-transform infrared spectra and X-ray energy-dispersive spectroscopy analysis confirmed the production of alumina at processing temperatures above 973 K. X-Ray diffraction revealed that the films were amorphous. Film thickness, ranging from 30 to 250 μm, and the average deposition rate were determined from scanning electron microscopy results. From transmission electron microscopy, the average primary particle size was determined to be approximately 18 nm and the formation of nanoparticle aggregates was evident. Annealing of the films at temperatures ranging from 523 to 1173 K in the presence of air did not have an effect on particle size. The specific surface area of the powder composing the films ranged from 10 to 185 m² g⁻¹, as determined from nitrogen gas adsorption by the Brunauer–Emmett–Teller method.     

热丝辅助ECR CVD制备cBN薄膜

立方氮化硼(cBN)是一种具有广泛应用价值的Ⅲ-Ⅴ族二元化合物，其优异性质可与金刚石相比拟或胜之．立方氮化硼的制备与性能研究是近二十年来材料领域关注的焦点之一．我们用热丝辅助ECR CVD方法制备了cBN薄膜，并初步探讨了热丝对cBN形成的作用．偏压并不是cBN形成的唯一主要条件，活性粒子也有非常关键的作用．     

Growth rate and surface microstructure in α(6H)–SiC thin films grown by chemical vapor deposition

Monocrystalline 6H-SiC thin films have been epitaxially grown on off-axis 6H-SiC {0001} substrates in the temperature range of 1623–1873 K via chemical vapor deposition. The growth rate was a strong function of the growth temperature and the reactant gas concentration. The activation energies for growth were 64 kJ/mole and 55 kJ/mole for the (0001) Si face and the (0001) C face, respectively. The concentration of growth pits in the films increased as a function of decreasing deposition temperature, increasing concentration of reactant gases and increasing off-axis orientation. Beta-SiC islands were also observed in the epilayers when the (SiH₄ + C₂H₄)/H₂ ratio was ≥2.5:3000.     

Formation of titanium and cobalt germanides on Si (100) using rapid thermal processing

Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid thermal annealing in either Ar or N₂ ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The sheet resistance was found to be dependent on annealing ambient (Ar or N₂) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides were found to be 20 μΩ-cm and 35.3μΩ-cm, corresponding to TiGe₂ and Co₂Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti₆Ge₅ phase forms prior to TiGe₂. The TiGe₂ phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures (425° C); however, the stability of the material is poor at elevated temperatures.     

ICP-AES法测定封严涂层中BN含量

利用IC－AES法测定了封严涂层的BN，并对样品的溶解方法，仪器工作参数，光谱干扰等进行了研究。方法的相对标准偏差＜2％（n=10)，加标回收率在95％以上，方法简便，可靠，结果令人满意。     

TiB2与BN复相陶瓷的渗流模型

试验结果证实,TiB₂与BN复相陶瓷的导电性能符合渗流理论,原料粉粒度配比下,其渗流阀值为V_c%=22.9%;原料粉粒度比的改变将改变渗流阀值,从而改变各配比下的电阻率值;TiB₂与BN在SPS系统中快速烧结,晶粒的尺度比与原料粉的粒度比基本保持一致。